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Results:
1-15
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Results: 15
Authors:
FILONOV AB
KHOLOD AN
BORISENKO VE
SAUL A
BASSANI F
DAVITAYA FA
Citation: Ab. Filonov et al., GRAIN EFFECT IN ELECTRONIC-PROPERTIES OF SILICON EPITAXIAL NANOSTRUCTURES, Computational materials science, 10(1-4), 1998, pp. 148-153
Authors:
FILONOV AB
KHOLOD AN
BORISENKO VE
PUSHKARCHUK AL
ZELENKOVSKII VM
BASSANI F
DAVITAYA FA
Citation: Ab. Filonov et al., OXYGEN EFFECT ON OPTICAL-PROPERTIES OF NANOSIZE SILICON CLUSTERS, Physical review. B, Condensed matter, 57(3), 1998, pp. 1394-1397
Authors:
MULLER P
RANGUIS A
LADEVEZE M
DAVITAYA FA
TREGLIA G
Citation: P. Muller et al., THERMODESORPTION MASS-SPECTROMETRY STUDY OF THE ADSORPTION OF SB ON MISORIENTED SI(111), Surface science, 417(1), 1998, pp. 107-120
Authors:
LADEVEZE M
TREGLIA G
MULLER P
DAVITAYA FA
Citation: M. Ladeveze et al., STEP-DRIVEN MOLECULAR ADSORPTION OF SB ON SI(111), Surface science, 395(2-3), 1998, pp. 317-325
Authors:
BASSANI F
MENARD S
DAVITAYA FA
Citation: F. Bassani et al., MBE GROWTH OF SI CAF2 NANOSTRUCTURES - PHOTOLUMINESCENCE AND ABSORPTION PROPERTIES/, Physica status solidi. a, Applied research, 165(1), 1998, pp. 49-56
Authors:
IOANNOUSOUGLERIDIS V
TSAKIRI V
NASSIOPOULOU AG
PHOTOPOULOS P
BASSANI F
DAVITAYA FA
Citation: V. Ioannousougleridis et al., ELECTROLUMINESCENCE FROM SI CAF2 MULTILAYERS GROWN BY MOLECULAR-BEAM EPITAXY/, Physica status solidi. a, Applied research, 165(1), 1998, pp. 97-103
Authors:
BASSANI F
MIHALCESCU I
VIAL JC
DAVITAYA FA
Citation: F. Bassani et al., OPTICAL-ABSORPTION EVIDENCE OF QUANTUM CONFINEMENT IN SI CAF2 MULTILAYERS GROWN BY MOLECULAR-BEAM EPITAXY/, Applied surface science, 117, 1997, pp. 670-676
Authors:
LADEVEZE M
BASSANI F
DAVITAYA FA
TREGLIA G
DUBOIS C
STUCK R
Citation: M. Ladeveze et al., SB DOPING OF SI MOLECULAR-BEAM EPITAXIAL LAYERS - INFLUENCE OF THE SUBSTRATE MISORIENTATION, Physical review. B, Condensed matter, 56(12), 1997, pp. 7615-7622
THE ELECTRONIC-ENERGY LEVELS OF SI-BASED NANOCRYSTALLINE MATERIALS - THEORY COMPARED WITH EXPERIMENT
Authors:
VERVOORT L
SAUL A
BASSANI F
DAVITAYA FA
Citation: L. Vervoort et al., THE ELECTRONIC-ENERGY LEVELS OF SI-BASED NANOCRYSTALLINE MATERIALS - THEORY COMPARED WITH EXPERIMENT, Thin solid films, 297(1-2), 1997, pp. 163-166
Authors:
BASSANI F
VERVOORT L
DAVITAYA FA
Citation: F. Bassani et al., MOLECULAR-BEAM EPITAXIAL-GROWTH OF LOW-DIMENSIONAL SILICON STRUCTURESEMBEDDED IN CAF2, Thin solid films, 297(1-2), 1997, pp. 179-182
Authors:
FILONOV AB
KHOLOD AN
NOVIKOV VA
BORISENKO VE
VERVOORT L
BASSANI F
SAUL A
DAVITAYA FA
Citation: Ab. Filonov et al., GRAIN INTERACTION EFFECT IN ELECTRONIC-PROPERTIES OF SILICON NANOSIZEFILMS, Applied physics letters, 70(6), 1997, pp. 744-746
Authors:
LADEVEZE M
BERBEZIER I
DAVITAYA FA
Citation: M. Ladeveze et al., SILICON HOMOEPITAXY ON HIGH-INDEX SURFACES AND THE EFFECT OF ANTIMONYON THIS GROWTH, Surface science, 352, 1996, pp. 797-801
Authors:
BASSANI F
VERVOORT L
MIHALCESCU I
VIAL JC
DAVITAYA FA
Citation: F. Bassani et al., FABRICATION AND OPTICAL-PROPERTIES OF SI CAF2(111) MULTIQUANTUM WELLS/, Journal of applied physics, 79(8), 1996, pp. 4066-4071
EFFICIENT VISIBLE-LIGHT EMISSION FROM SI CAF2(111) HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY/
Authors:
VERVOORT L
BASSANI F
MIHALCESCU I
VIAL JC
DAVITAYA FA
Citation: L. Vervoort et al., EFFICIENT VISIBLE-LIGHT EMISSION FROM SI CAF2(111) HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY/, Physica status solidi. b, Basic research, 190(1), 1995, pp. 123-127
Authors:
DAVITAYA FA
VERVOORT L
BASSANI F
OSSICINI S
FASOLINO A
BERNARDINI F
Citation: Fa. Davitaya et al., LIGHT-EMISSION AT ROOM-TEMPERATURE FROM SI CAF2 MULTILAYERS/, Europhysics letters, 31(1), 1995, pp. 25-30
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