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Results:
1-20
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Results: 20
Authors:
WAN CH
NAUWELAERS B
DERAEDT W
Citation: Ch. Wan et al., A SIMPLE ERROR-CORRECTION METHOD FOR 2-PORT TRANSMISSION PARAMETER MEASUREMENT, IEEE microwave and guided wave letters, 8(2), 1998, pp. 58-59
Authors:
DERAEDT W
CEULEMANS R
Citation: W. Deraedt et R. Ceulemans, CLONAL VARIABILITY IN BIOMASS PRODUCTION AND CONVERSION EFFICIENCY OFPOPLAR DURING THE ESTABLISHMENT YEAR OF A SHORT-ROTATION COPPICE PLANTATION, Biomass & bioenergy, 15(4-5), 1998, pp. 391-398
Authors:
VANMEER H
VALENZA M
VANDERZANDEN K
DERAEDT W
SIMOEN E
SCHREURS D
KAUFMANN L
Citation: H. Vanmeer et al., EFFECT OF SCHOTTKY-BARRIER ALTERATION ON THE LOW-FREQUENCY NOISE OF INP-BASED HEMTS, IEEE electron device letters, 19(10), 1998, pp. 370-372
Authors:
WAN CH
NAUWELAERS B
SCHREURS D
DERAEDT W
VANROSSUM M
Citation: Ch. Wan et al., A NEW TECHNIQUE FOR IN-FIXTURE CALIBRATION USING STANDARDS OF CONSTANT LENGTH, IEEE transactions on microwave theory and techniques, 46(9), 1998, pp. 1318-1320
Authors:
WAN CH
NAUWELAERS B
DERAEDT W
VANROSSUM M
Citation: Ch. Wan et al., 2 NEW MEASUREMENT METHODS FOR EXPLICIT DETERMINATION OF COMPLEX PERMITTIVITY, IEEE transactions on microwave theory and techniques, 46(11), 1998, pp. 1614-1619
Authors:
SCHREURS D
VANMEER H
VANDERZANDEN K
DERAEDT W
NAUWELAERS B
VANDECAPELLE A
Citation: D. Schreurs et al., IMPROVED HEMT MODEL FOR LOW PHASE-NOISE INP-BASED MMIC OSCILLATORS, IEEE transactions on microwave theory and techniques, 46(10), 1998, pp. 1583-1585
Authors:
VANMEER H
SIMOEN E
VALENZA M
VANDERZANDEN K
DERAEDT W
Citation: H. Vanmeer et al., LOW-FREQUENCY DRAIN CURRENT NOISE BEHAVIOR OF INP BASED MODFETS IN THE LINEAR AND SATURATION REGIME, I.E.E.E. transactions on electron devices, 45(12), 1998, pp. 2475-2482
Authors:
VANHOVE M
FINDERS J
VANDERZANDEN K
DERAEDT W
VANROSSUM M
BAEYENS Y
SCHREURS D
MENOZZI R
Citation: M. Vanhove et al., MATERIAL AND PROCESS-RELATED LIMITATIONS OF INP HEMT PERFORMANCE, Materials science & engineering. B, Solid-state materials for advanced technology, 44(1-3), 1997, pp. 311-315
Authors:
SCHREURS DMMP
BAEYENS Y
NAUWELAERS BKJC
DERAEDT W
VANHOVE M
VANROSSUM M
Citation: Dmmp. Schreurs et al., S-PARAMETER MEASUREMENT BASED QUASI-STATIC LARGE-SIGNAL COLD HEMT MODEL FOR RESISTIVE MIXER DESIGN, International journal of microwave and millimeter-wave computer-aided engineering, 6(4), 1996, pp. 250-258
Authors:
ZENG A
JACKSON MK
VANHOVE M
DERAEDT W
Citation: A. Zeng et al., ELECTROOPTIC CHARACTERIZATION OF MODULATION-DOPED FIELD-EFFECT TRANSISTORS WITH MONOLITHICALLY-INTEGRATED TEST FIXTURES, Optical and quantum electronics, 28(7), 1996, pp. 867-874
Authors:
ROUQUETTE P
GASQUET D
BARBEROUSSE F
DERAEDT W
BAEYENS Y
Citation: P. Rouquette et al., INFLUENCE OF KINK EFFECT ON NOISE MEASUREMENTS IN INP SUBSTRATE PHEMTS AT MICROWAVE-FREQUENCIES, Solid-state electronics, 39(10), 1996, pp. 1423-1426
Authors:
SCHREURS D
SPIERS A
DERAEDT W
VANDERZANDEN K
BAEYENS Y
VANHOVE M
NAUWELAERS B
VANROSSUM M
Citation: D. Schreurs et al., DC, LF DISPERSION AND HF CHARACTERIZATION OF SHORT-TIME STRESSED INP BASED LM-HEMTS, Microelectronics and reliability, 36(11-12), 1996, pp. 1911-1914
Authors:
WAN C
NAUWELAERS B
DERAEDT W
VANROSSUM M
Citation: C. Wan et al., COMPLEX PERMITTIVITY MEASUREMENT METHOD BASED ON ASYMMETRY OF RECIPROCAL 2-PORTS, Electronics Letters, 32(16), 1996, pp. 1497-1498
Authors:
GASQUET D
BARBEROUSSE F
DEMURCIA M
DERAEDT W
CLAEYS C
Citation: D. Gasquet et al., DETERMINATION OF PHEMTS MICROWAVE NOISE PARAMETERS ONLY BY MEANS OF THE SMALL-SIGNAL EQUIVALENT-CIRCUIT AND EXPERIMENTAL COMPARISONS, Journal de physique. III, 5(5), 1995, pp. 495-507
Authors:
DERAEDT W
Citation: W. Deraedt, INP TECHNOLOGY DRIVES MILLIMETER-WAVE HEMT AMPLIFIERS, Microwaves & RF, 34(14), 1995, pp. 65
Authors:
JANSEN P
SCHREURS D
DERAEDT W
NAUWELAERS B
VANROSSUM M
Citation: P. Jansen et al., CONSISTENT SMALL-SIGNAL AND LARGE-SIGNAL EXTRACTION TECHNIQUES FOR HETEROJUNCTION FETS, IEEE transactions on microwave theory and techniques, 43(1), 1995, pp. 87-93
Authors:
ZENG A
JACKSON MK
VANHOVE M
DERAEDT W
Citation: A. Zeng et al., ON-WAFER CHARACTERIZATION OF IN0.52AL0.48AS IN0.53GA0.47 AS MODULATION-DOPED FIELD-EFFECT TRANSISTOR WITH 4.2 PS SWITCHING TIME AND 3.2 PS DELAY/, Applied physics letters, 67(2), 1995, pp. 262-263
Authors:
VANHOVE M
ZOU G
DERAEDT W
JANSEN P
JONCKHEERE R
VANROSSUM M
HOOLE ACF
ALLEE DR
BROERS AN
CROZAT P
JIN Y
ANIEL F
ADDE R
Citation: M. Vanhove et al., SCALING BEHAVIOR OF DELTA-DOPED ALGAAS INGAAS HIGH-ELECTRON-MOBILITY TRANSISTORS WITH GATELENGTHS DOWN TO 60 NM AND SOURCE-DRAIN GAPS DOWN TO 230 NM/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(4), 1993, pp. 1203-1208
Authors:
ANIEL F
JINDELORME Y
CROZAT P
DELUSTRAC A
ADDE R
VANHOVE M
DERAEDT W
VANROSSUM M
JIN Y
LAUNOIS H
Citation: F. Aniel et al., GATE LENGTH ELECTRIC PARAMETER DEPENDENCES OF ULTRA-SUBMICROMETER DELTA-DOPED PSEUDOMORPHIC HEMTS, Electronics Letters, 29(17), 1993, pp. 1570-1571
Authors:
ZOU G
PEREIRA R
DEPOTTER M
VANHOVE M
DERAEDT W
VANROSSUM M
Citation: G. Zou et al., HIGHLY UNIFORM E D MESFETS BY SI ION-IMPLANTATION AND METHANE HYDROGEN PLASMA GATE RECESSING/, Semiconductor science and technology, 6(9), 1991, pp. 912-915
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