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Results:
1-16
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Results: 16
Authors:
SCHOLZ F
OFF J
SOHMER A
SYGANOW V
DORNEN A
AMBACHER O
Citation: F. Scholz et al., MOVPE OF GAINN HETEROSTRUCTURES AND QUANTUM-WELLS, Journal of crystal growth, 190, 1998, pp. 8-12
Authors:
ADLER F
GEIGER M
BAUKNECHT A
HAASE D
ERNST P
DORNEN A
SCHOLZ F
SCHWEIZER H
Citation: F. Adler et al., SELF-ASSEMBLED INAS GAAS QUANTUM DOTS UNDER RESONANT EXCITATION/, Journal of applied physics, 83(3), 1998, pp. 1631-1636
Authors:
KAUFMANN B
DORNEN A
Citation: B. Kaufmann et A. Dornen, WEAK JAHN-TELLER COUPLING OF IRON (FE2+) IN INP, GAAS AND GAP ZEEMAN AND PIEZOSPECTROSCOPY, Zeitschrift für physikalische Chemie, 201, 1997, pp. 111-117
Authors:
SCHOLZ F
SOHMER A
OFF J
SYGANOW V
DORNEN A
IM JS
HANGLEITER A
LAKNER H
Citation: F. Scholz et al., IN INCORPORATION EFFICIENCY AND COMPOSITION FLUCTUATIONS IN MOVPE GROWN GAINN GAN HETERO STRUCTURES AND QUANTUM-WELLS/, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 238-244
Authors:
LAUER S
DANILEWSKY AN
MEINHARDT J
HOFMANN R
DORNEN A
BENZ KW
Citation: S. Lauer et al., SELECTED 3D-TRANSITION METALS IN GALLIUM ANTIMONIDE - VANADIUM, TITANIUM AND IRON, Crystal research and technology, 32(8), 1997, pp. 1095-1102
Authors:
KAUFMANN B
DORNEN A
HAM FS
Citation: B. Kaufmann et al., CRYSTAL-FIELD MODEL OF VANADIUM IN 6H SILICON-CARBIDE, Physical review. B, Condensed matter, 55(19), 1997, pp. 13009-13019
Authors:
SCHOLZ F
HARLE V
BOLAY H
STEUBER F
KAUFMANN B
REYHER G
DORNEN A
GFRORER O
IM SJ
HANGLEITER A
Citation: F. Scholz et al., LOW-PRESSURE METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF GAN GAINN HETEROSTRUCTURES/, Solid-state electronics, 41(2), 1997, pp. 141-144
Authors:
SCHOLZ F
HARLE V
STEUBER F
BOLAY H
DORNEN A
KAUFMANN B
SYGANOW V
HANGLEITER A
Citation: F. Scholz et al., LOW-PRESSURE MOVPE OF GAN AND GAINN GAN HETEROSTRUCTURES/, Journal of crystal growth, 170(1-4), 1997, pp. 321-324
Authors:
DANILEWSKY AN
LAUER S
MEINHARDT J
BENZ KW
KAUFMANN B
HOFMANN R
DORNEN A
Citation: An. Danilewsky et al., GROWTH AND CHARACTERIZATION OF GASB BULK CRYSTALS WITH LOW ACCEPTOR CONCENTRATION, Journal of electronic materials, 25(7), 1996, pp. 1082-1087
Authors:
HAASE D
SCHMID M
KURNER W
DORNEN A
HARLE V
SCHOLZ F
BURKARD M
SCHWEIZER H
Citation: D. Haase et al., DEEP-LEVEL DEFECTS AND N-TYPE-CARRIER CONCENTRATION IN NITROGEN-IMPLANTED GAN, Applied physics letters, 69(17), 1996, pp. 2525-2527
Authors:
KAUFMANN B
DORNEN A
HARLE V
BOLAY H
SCHOLZ F
PENSL G
Citation: B. Kaufmann et al., NEW NEAR-INFRARED DEFECT LUMINESCENCE IN GAN DOPED WITH VANADIUM BY ION-IMPLANTATION, Applied physics letters, 68(2), 1996, pp. 203-204
Authors:
QUEISSER I
HARLE V
DORNEN A
SCHOLZ F
Citation: I. Queisser et al., BAND DISCONTINUITY OF STRAINED-LAYER GAINAS GAINASP HETEROSTRUCTURES, Applied physics letters, 64(22), 1994, pp. 2991-2993
Authors:
MOSER M
WINTERHOFF R
GENG C
QUEISSER I
SCHOLZ F
DORNEN A
Citation: M. Moser et al., REFRACTIVE-INDEX OF (ALXGA1-X)(0.5)IN0.5P GROWN BY METALORGANIC VAPOR-PHASE EPITAXY, Applied physics letters, 64(2), 1994, pp. 235-237
Authors:
PRESSEL K
DORNEN A
RUCKERT G
THONKE K
Citation: K. Pressel et al., CHARGE-TRANSFER TRANSITIONS AND PSEUDOACCEPTOR STATES OF IRON IN GALLIUM-PHOSPHIDE, Physical review. B, Condensed matter, 47(24), 1993, pp. 16267-16273
Authors:
PRESSEL K
BOHNERT G
DORNEN A
KAUFMANN B
DENZEL J
THONKE K
Citation: K. Pressel et al., OPTICAL STUDY OF SPIN-FLIP TRANSITIONS AT FE-3+ IN INP, Physical review. B, Condensed matter, 47(15), 1993, pp. 9411-9417
Authors:
DORNEN A
HAASE D
HILLER C
PRESSEL K
WEBER J
SCHOLZ F
Citation: A. Dornen et al., EVIDENCE OF AN OFF-CENTER POSITION OF THULIUM IN GAAS AND EXCITONIC EXCITATION OF THE TM(3+) EMISSION, Journal of applied physics, 74(10), 1993, pp. 6457-6459
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1-16
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