Citation: Lj. Meng et al., EFFECT OF SUBSTRATE-TEMPERATURE ON THE PROPERTIES OF RUO2 FILMS PREPARED BY RF REACTIVE MAGNETRON SPUTTERING, Journal of the Korean Physical Society, 32, 1998, pp. 1835-1838
Citation: Lj. Meng et Mp. Dossantos, PROPERTIES OF INDIUM TIN OXIDE-FILMS PREPARED BY RF REACTIVE MAGNETRON SPUTTERING AT DIFFERENT SUBSTRATE-TEMPERATURE, Thin solid films, 322(1-2), 1998, pp. 56-62
Authors:
ROLO AG
VIEIRA LG
GOMES MJM
RIBEIRO JL
BELSLEY MS
DOSSANTOS MP
Citation: Ag. Rolo et al., GROWTH AND CHARACTERIZATION OF CADMIUM-SULFIDE NANOCRYSTALS EMBEDDED IN SILICON DIOXIDE FILMS, Thin solid films, 312(1-2), 1998, pp. 348-353
Citation: Lj. Meng et Mp. Dossantos, CHARACTERIZATION OF TITANIUM NITRIDE FILMS PREPARED BY DC REACTIVE MAGNETRON SPUTTERING AT DIFFERENT NITROGEN PRESSURES, Surface & coatings technology, 90(1-2), 1997, pp. 64-70
Citation: Lj. Meng et Mp. Dossantos, STUDY OF THE EFFECT OF THE OXYGEN PARTIAL-PRESSURE ON THE PROPERTIES OF RF REACTIVE MAGNETRON-SPUTTERED TIN-DOPED INDIUM OXIDE-FILMS, Applied surface science, 120(3-4), 1997, pp. 243-249
Citation: Lj. Meng et Mp. Dossantos, PROPERTIES OF INDIUM TIN OXIDE (ITO) FILMS PREPARED BY RF REACTIVE MAGNETRON SPUTTERING AT DIFFERENT PRESSURES, Thin solid films, 303(1-2), 1997, pp. 151-155
Citation: Lj. Meng et Mp. Dossantos, STRUCTURE EFFECT ON ELECTRICAL-PROPERTIES OF ITO FILMS PREPARED BY RFREACTIVE MAGNETRON SPUTTERING, Thin solid films, 289(1-2), 1996, pp. 65-69
Citation: Lj. Meng et Mp. Dossantos, CHARACTERIZATION OF ZNO FILMS PREPARED BY DE REACTIVE MAGNETRON SPUTTERING AT DIFFERENT OXYGEN PARTIAL PRESSURES, Vacuum, 46(8-10), 1995, pp. 1001-1004
Citation: Lj. Meng et al., DEPOSITION AND PROPERTIES OF TITANIUM NITRIDE FILMS PRODUCED BY DC REACTIVE MAGNETRON SPUTTERING, Vacuum, 46(3), 1995, pp. 233-239
Citation: Lj. Meng et al., STUDY OF THE STRUCTURAL-PROPERTIES OF ZNO THIN-FILMS BY X-RAY PHOTOELECTRON-SPECTROSCOPY, Applied surface science, 78(1), 1994, pp. 57-61
Citation: Lj. Meng et Mp. Dossantos, THE INFLUENCE OF OXYGEN PARTIAL-PRESSURE AND TOTAL PRESSURE (O2-FILMSPREPARED BY DC SPUTTERING(AR) ON THE PROPERTIES OF TIN OXIDE), Vacuum, 45(12), 1994, pp. 1191-1195
Citation: Lj. Meng et al., ZINC-OXIDE FILMS PREPARED BY DC REACTIVE MAGNETRON SPUTTERING AT DIFFERENT SUBSTRATE TEMPERATURES, Vacuum, 45(1), 1994, pp. 19-22
Citation: Lj. Meng et Mp. Dossantos, DIRECT-CURRENT REACTIVE MAGNETRON-SPUTTERED ZINC-OXIDE THIN-FILMS - THE EFFECT OF THE SPUTTERING PRESSURE, Thin solid films, 250(1-2), 1994, pp. 26-32
Citation: Lj. Meng et al., STUDY OF POROSITY OF TITANIUM-OXIDE FILMS BY X-RAY PHOTOELECTRON-SPECTROSCOPY AND IR TRANSMITTANCE, Thin solid films, 239(1), 1994, pp. 117-122
Citation: Lj. Meng et Mp. Dossantos, THE EFFECT OF SUBSTRATE-TEMPERATURE ON THE PROPERTIES OF SPUTTERED TIN OXIDE-FILMS, Thin solid films, 237(1-2), 1994, pp. 112-117
Citation: Lj. Meng et Mp. Dossantos, THE INFLUENCE OF OXYGEN PARTIAL-PRESSURE ON THE PROPERTIES OF DC REACTIVE MAGNETRON-SPUTTERED TITANIUM-OXIDE FILMS, Applied surface science, 68(3), 1993, pp. 319-325