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Results: 1-11 |
Results: 11
OPTICAL CHARACTERIZATION OF DISORDERED INXGA1-XP ALLOYS
Authors: GONZALEZ L GONZALEZ Y DOTOR ML MARTINEZPASTOR J
Citation: L. Gonzalez et al., OPTICAL CHARACTERIZATION OF DISORDERED INXGA1-XP ALLOYS, Applied physics letters, 72(20), 1998, pp. 2595-2597
EFFECT OF PHOSPHORUS ON ELECTRICAL-PROPERTIES OF UNDOPED INP GROWN ATLOW-TEMPERATURE BY ATOMIC LAYER MOLECULAR-BEAM EPITAXY
Authors: POSTIGO PA GARCIAPEREZ F DOTOR ML GOLMAYO D BRIONES F
Citation: Pa. Postigo et al., EFFECT OF PHOSPHORUS ON ELECTRICAL-PROPERTIES OF UNDOPED INP GROWN ATLOW-TEMPERATURE BY ATOMIC LAYER MOLECULAR-BEAM EPITAXY, Materials science and technology, 12(2), 1996, pp. 187-189
RELAXATION BEHAVIOR OF UNDOPED INXGA1-XP 0.5-LESS-THAN-X-LESS-THAN-0.7 GROWN ON GAAS BY ATOMIC LAYER MOLECULAR-BEAM EPITAXY
Authors: GONZALEZ L GONZALEZ Y ARAGON G CASTRO MJ DOTOR ML DUNSTAN DJ
Citation: L. Gonzalez et al., RELAXATION BEHAVIOR OF UNDOPED INXGA1-XP 0.5-LESS-THAN-X-LESS-THAN-0.7 GROWN ON GAAS BY ATOMIC LAYER MOLECULAR-BEAM EPITAXY, Journal of applied physics, 80(6), 1996, pp. 3327-3332
INP TUNNEL-JUNCTIONS GROWN BY ATOMIC LAYER MOLECULAR-BEAM EPITAXY ON INP AND INP-ON-SI SUBSTRATES
Authors: DOTOR ML GOLMAYO D CALLE A SENDRA JR ANGUITA JV GONZALEZ L GONZALEZ Y BRIONES F
Citation: Ml. Dotor et al., INP TUNNEL-JUNCTIONS GROWN BY ATOMIC LAYER MOLECULAR-BEAM EPITAXY ON INP AND INP-ON-SI SUBSTRATES, Solar energy materials and solar cells, 36(3), 1995, pp. 271-276
ELECTRICAL AND OPTICAL-PROPERTIES OF UNDOPED INP GROWN AT LOW-TEMPERATURE BY ATOMIC LAYER MOLECULAR-BEAM EPITAXY
Authors: POSTIGO PA DOTOR ML HUERTAS P GOLMAYO D BRIONES F
Citation: Pa. Postigo et al., ELECTRICAL AND OPTICAL-PROPERTIES OF UNDOPED INP GROWN AT LOW-TEMPERATURE BY ATOMIC LAYER MOLECULAR-BEAM EPITAXY, Journal of applied physics, 77(1), 1995, pp. 402-404
LOW-TEMPERATURE INP SI TECHNOLOGY - FROM SI SUBSTRATE PREPARATION TO EPITAXIAL-GROWTH/
Authors: GONZALEZ L GONZALEZ Y DOTOR ML GOLMAYO D GOMEZ D BRIONES F
Citation: L. Gonzalez et al., LOW-TEMPERATURE INP SI TECHNOLOGY - FROM SI SUBSTRATE PREPARATION TO EPITAXIAL-GROWTH/, Electronics Letters, 30(3), 1994, pp. 269-271
MONOLITHICALLY INTEGRATED LED, WAVE-GUIDE AND PHOTODETECTOR OPTICAL-SYSTEM FOR NEAR-INFRARED BIOSENSOR
Authors: HUERTAS P MIER G DOTOR ML ANGUITA JV GOLMAYO D BRIONES F
Citation: P. Huertas et al., MONOLITHICALLY INTEGRATED LED, WAVE-GUIDE AND PHOTODETECTOR OPTICAL-SYSTEM FOR NEAR-INFRARED BIOSENSOR, Sensors and actuators. A, Physical, 37-8, 1993, pp. 512-515
QUANTUM-WELL LASERS WITH INAS MONOLAYERS IN THE ACTIVE REGION GROWN AT LOW-TEMPERATURE BY ATOMIC LAYER MOLECULAR-BEAM EPITAXY
Authors: DOTOR ML MELENDEZ J HUERTAS P MAZUELAS A GARRIGA M GOLMAYO D BRIONES F
Citation: Ml. Dotor et al., QUANTUM-WELL LASERS WITH INAS MONOLAYERS IN THE ACTIVE REGION GROWN AT LOW-TEMPERATURE BY ATOMIC LAYER MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 127(1-4), 1993, pp. 46-49
STRUCTURAL CHARACTERIZATION OF HIGHLY STRAINED INAS N-MONOLAYER LASERS AND QUANTUM-WELL STRUCTURES BY X-RAY-DIFFRACTION AND TRANSMISSION ELECTRON-MICROSCOPY
Authors: MAZUELAS A MOLINA SI ARAGON G MELENDEZ J DOTOR ML HUERTAS P BRIONES F
Citation: A. Mazuelas et al., STRUCTURAL CHARACTERIZATION OF HIGHLY STRAINED INAS N-MONOLAYER LASERS AND QUANTUM-WELL STRUCTURES BY X-RAY-DIFFRACTION AND TRANSMISSION ELECTRON-MICROSCOPY, Journal of crystal growth, 127(1-4), 1993, pp. 596-600
(GA0.22IN0.78AS)M (GA0.22IN0.78P)M SUPERLATTICES GROWN BY ATOMIC-LAYER MOLECULAR-BEAM EPITAXY ON INP/
Authors: DOTOR ML GOLMAYO D BRIONES F
Citation: Ml. Dotor et al., (GA0.22IN0.78AS)M (GA0.22IN0.78P)M SUPERLATTICES GROWN BY ATOMIC-LAYER MOLECULAR-BEAM EPITAXY ON INP/, Journal of crystal growth, 127(1-4), 1993, pp. 619-622
P-TYPE INP GROWN AT LOW-TEMPERATURES BY ATOMIC LAYER MOLECULAR-BEAM EPITAXY (ALMBE)
Authors: DOTOR ML HUERTAS P POSTIGO PA GOLMAYO D BRIONES F
Citation: Ml. Dotor et al., P-TYPE INP GROWN AT LOW-TEMPERATURES BY ATOMIC LAYER MOLECULAR-BEAM EPITAXY (ALMBE), Electronics Letters, 29(14), 1993, pp. 1270-1271
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