Authors:
Vanhollebeke, K
D'Hondt, M
Moerman, I
Van Daele, P
Demeester, P
Citation: K. Vanhollebeke et al., Zn doping of InP, InAsP/InP, and InAsP/InGaAs heterostructures through metalorganic vapor phase diffusion (MOVPD), J ELEC MAT, 30(8), 2001, pp. 951-959
Authors:
Van Caenegem, T
Van Thourhout, D
Galarza, M
Verstuyft, S
Moerman, I
Van Daele, P
Baets, R
Demeester, P
Herben, CGP
Leijtens, XJM
Smit, MK
Citation: T. Van Caenegem et al., Monolithically integrated multi-wavelength laser by selective area growth with metal organic vapour phase epitaxy, ELECTR LETT, 37(5), 2001, pp. 296-298
Authors:
Trager-Cowan, C
McColl, D
Sweeney, F
Grimson, STF
Treguer, JF
Mohammed, A
Middleton, PG
Manson-Smith, SK
O'Donnell, KP
Van der Stricht, W
Moerman, I
Demeester, P
Wu, MF
Vantomme, A
Zubia, D
Hersee, SD
Citation: C. Trager-cowan et al., Probing nitride thin films in 3-dimensions using a variable energy electron beam, MRS I J N S, 5, 2000, pp. NIL_347-NIL_352
Authors:
Vanhollebeke, K
Moerman, I
Van Daele, P
Demeester, P
Citation: K. Vanhollebeke et al., Compliant substrate technology: Integration of mismatched materials for opto-electronic applications, PROG CRYST, 41(1-4), 2000, pp. 1-55
Authors:
Vanhollebeke, K
Moerman, I
Van Daele, P
Demeester, P
Citation: K. Vanhollebeke et al., Lattice-mismatched InGaAs layers grown by OMVPE on GaAs based compliant substrates, J ELEC MAT, 29(7), 2000, pp. 933-939
Citation: M. Pickavet et P. Demeester, Long-term planning of WDM networks: A comparison between single-period andmulti-period techniques, PH NETW COM, 1(4), 1999, pp. 331-346
Authors:
O'Donnell, KP
Martin, RW
Middleton, PG
Bayliss, SC
Fletcher, I
Van der Stricht, W
Demeester, P
Moerman, I
Citation: Kp. O'Donnell et al., Spectroscopy and microscopy of localised and delocalised excitons in InGaN-based light emitting diodes and epilayers, MAT SCI E B, 59(1-3), 1999, pp. 288-291
Authors:
Bayliss, SC
Demeester, P
Fletcher, I
Martin, RW
Middleton, PG
Moerman, I
O'Donnell, KP
Sapelkin, A
Trager-Cowan, C
Van der Stricht, W
Young, C
Citation: Sc. Bayliss et al., The optical and structural properties of InGaN epilayers with very high indium content, MAT SCI E B, 59(1-3), 1999, pp. 292-297
Authors:
Trager-Cowan, C
Osborne, I
Barisonzi, M
Manson-Smith, SK
O'Donnell, KP
Jacobs, K
Moerman, I
Demeester, P
Citation: C. Trager-cowan et al., Cathodoluminescence from an InGaN/GaN MQW grown on an epitaxially laterally overgrown GaN epilayer, PHYS ST S-B, 216(1), 1999, pp. 347-350