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Authors: Colle, D Van Heuven, P Develder, C Van den Berghe, S Lievens, I Pickavet, M Demeester, P
Citation: D. Colle et al., MPLS recovery mechanisms for IP-over-WDM networks, PH NETW COM, 3(1-2), 2001, pp. 23-40

Authors: Demeester, P
Citation: P. Demeester, Studies on the reaction mechanism of RNAse T1 with quantum chemical reactivity indexes, J MOL CAT B, 15(1-3), 2001, pp. 29-43

Authors: Arijs, P Meersman, R Van Parys, W Iannone, E Tanzi, A Pierpaoli, M Bentivoglio, F Demeester, P
Citation: P. Arijs et al., Architecture and design of optical channel protected ring networks, J LIGHTW T, 19(1), 2001, pp. 11-22

Authors: Vanhollebeke, K D'Hondt, M Moerman, I Van Daele, P Demeester, P
Citation: K. Vanhollebeke et al., Zn doping of InP, InAsP/InP, and InAsP/InGaAs heterostructures through metalorganic vapor phase diffusion (MOVPD), J ELEC MAT, 30(8), 2001, pp. 951-959

Authors: Vanhollebeke, K D'Hondt, M Moerman, I Van Daele, P Demeester, P
Citation: K. Vanhollebeke et al., MOVPE based Zn diffusion into InP and InAsP/InP hetero structures, J CRYST GR, 233(1-2), 2001, pp. 132-140

Authors: Modak, P D'Hondt, M Moerman, I Van Daele, P Mijlemans, P Demeester, P
Citation: P. Modak et al., 5.2% efficiency InAlGaP microcavity LEDs at 640nm on Ge substrates, ELECTR LETT, 37(6), 2001, pp. 377-378

Authors: Van Caenegem, T Van Thourhout, D Galarza, M Verstuyft, S Moerman, I Van Daele, P Baets, R Demeester, P Herben, CGP Leijtens, XJM Smit, MK
Citation: T. Van Caenegem et al., Monolithically integrated multi-wavelength laser by selective area growth with metal organic vapour phase epitaxy, ELECTR LETT, 37(5), 2001, pp. 296-298

Authors: Arijs, P Gryseels, M Demeester, P
Citation: P. Arijs et al., Planning of WDM ring networks, PH NETW COM, 2(1), 2000, pp. 33-51

Authors: Pickavet, M Demeester, P
Citation: M. Pickavet et P. Demeester, A zoom-in approach to design SDH mesh restorable networks, J HEURISTIC, 6(1), 2000, pp. 107-130

Authors: Pickavet, M Demeester, P
Citation: M. Pickavet et P. Demeester, Multi-period planning of survivable WDM networks, EUR T TELEC, 11(1), 2000, pp. 7-16

Authors: Trager-Cowan, C McColl, D Sweeney, F Grimson, STF Treguer, JF Mohammed, A Middleton, PG Manson-Smith, SK O'Donnell, KP Van der Stricht, W Moerman, I Demeester, P Wu, MF Vantomme, A Zubia, D Hersee, SD
Citation: C. Trager-cowan et al., Probing nitride thin films in 3-dimensions using a variable energy electron beam, MRS I J N S, 5, 2000, pp. NIL_347-NIL_352

Authors: Modak, P D'Hondt, M Delbeke, D Moerman, I Van Daele, P Baets, R Demeester, P Mijlemans, P
Citation: P. Modak et al., AlGaInP microcavity light-emitting diodes at 650 nm on Ge substrates, IEEE PHOTON, 12(8), 2000, pp. 957-959

Authors: Vanhollebeke, K Moerman, I Van Daele, P Demeester, P
Citation: K. Vanhollebeke et al., Compliant substrate technology: Integration of mismatched materials for opto-electronic applications, PROG CRYST, 41(1-4), 2000, pp. 1-55

Authors: Vanhollebeke, K Moerman, I Van Daele, P Demeester, P
Citation: K. Vanhollebeke et al., Lattice-mismatched InGaAs layers grown by OMVPE on GaAs based compliant substrates, J ELEC MAT, 29(7), 2000, pp. 933-939

Authors: Modak, P D'Hondt, M Mijlemans, P Moerman, I Van Daele, P Demeester, P
Citation: P. Modak et al., (Al)GaInP multiquantum well LEDs on GaAs and Ge, J ELEC MAT, 29(1), 2000, pp. 80-85

Authors: Struyve, K Wauters, N Falcao, P Arijs, P Colle, D Demeester, P Lagasse, P
Citation: K. Struyve et al., Application, design, and evolution of WDM in GTS's Pan-European Transport Network, IEEE COMM M, 38(3), 2000, pp. 114-121

Authors: Modak, P Delbeke, D Moerman, I Baets, R Van Daele, P Demeester, P
Citation: P. Modak et al., InAlGaP microcavity LEDs on Ge-substrates, J CRYST GR, 221, 2000, pp. 668-673

Authors: Depreter, B Moerman, I Baets, R Van Daele, P Demeester, P
Citation: B. Depreter et al., InP 1.3 mu m microcavity LEDs with high quantum efficiency, J CRYST GR, 221, 2000, pp. 674-678

Authors: Depreter, B Moerman, I Baets, R Van Daele, P Demeester, P
Citation: B. Depreter et al., InP-based 1300nm microcavity LEDs with 9% quantum efficiency, ELECTR LETT, 36(15), 2000, pp. 1303-1304

Authors: Pickavet, M Demeester, P
Citation: M. Pickavet et P. Demeester, Long-term planning of WDM networks: A comparison between single-period andmulti-period techniques, PH NETW COM, 1(4), 1999, pp. 331-346

Authors: Lagasse, P Demeester, P Ackaert, A Van Caenegem, B Van Parys, W O'Mahony, MJ Stubkjaer, K Benoit, J
Citation: P. Lagasse et al., Evolution towards photonic networks, EUR T TELEC, 10(6), 1999, pp. 637-645

Authors: Bockstaele, R Sys, C Blondelle, J Dhoedt, B Moerman, I Van Daele, P Demeester, P Baets, R
Citation: R. Bockstaele et al., Resonant cavity LED's optimized for coupling to polymer optical fibers, IEEE PHOTON, 11(2), 1999, pp. 158-160

Authors: O'Donnell, KP Martin, RW Middleton, PG Bayliss, SC Fletcher, I Van der Stricht, W Demeester, P Moerman, I
Citation: Kp. O'Donnell et al., Spectroscopy and microscopy of localised and delocalised excitons in InGaN-based light emitting diodes and epilayers, MAT SCI E B, 59(1-3), 1999, pp. 288-291

Authors: Bayliss, SC Demeester, P Fletcher, I Martin, RW Middleton, PG Moerman, I O'Donnell, KP Sapelkin, A Trager-Cowan, C Van der Stricht, W Young, C
Citation: Sc. Bayliss et al., The optical and structural properties of InGaN epilayers with very high indium content, MAT SCI E B, 59(1-3), 1999, pp. 292-297

Authors: Trager-Cowan, C Osborne, I Barisonzi, M Manson-Smith, SK O'Donnell, KP Jacobs, K Moerman, I Demeester, P
Citation: C. Trager-cowan et al., Cathodoluminescence from an InGaN/GaN MQW grown on an epitaxially laterally overgrown GaN epilayer, PHYS ST S-B, 216(1), 1999, pp. 347-350
Risultati: 1-25 | 26-31