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Results: 1-11 |
Results: 11
Investigation of body-tie effects on ion beam induced charge collection insilicon-on-insulator FETs using the Sandia nuclear microprobe
Authors: Walsh, DS Dodd, PE Shaneyfelt, MR Schwank, JR
Citation: Ds. Walsh et al., Investigation of body-tie effects on ion beam induced charge collection insilicon-on-insulator FETs using the Sandia nuclear microprobe, NUCL INST B, 181, 2001, pp. 305-310
An overview of radiation effects on electronics in the space telecommunications environment
Authors: Fleetwood, DM Winokur, PS Dodd, PE
Citation: Dm. Fleetwood et al., An overview of radiation effects on electronics in the space telecommunications environment, MICROEL REL, 40(1), 2000, pp. 17-26
Single-event upset and snapback in silicon-on-insulator devices and integrated circuits
Authors: Dodd, PE Shaneyfelt, MR Walsh, DS Schwank, JR Hash, GL Loemker, RA Draper, BL Winokur, PS
Citation: Pe. Dodd et al., Single-event upset and snapback in silicon-on-insulator devices and integrated circuits, IEEE NUCL S, 47(6), 2000, pp. 2165-2174
Correlation between Co-60 and X-ray radiation-induced charge buildup in silicon-on-insulator buried oxides
Authors: Schwank, JR Shaneyfelt, MR Dodd, PE Ferlet-Cavrois, V Loemker, RA Winokur, PS Fleetwood, DM Paillet, P Leray, JL Draper, BL Witczak, SC Riewe, LC
Citation: Jr. Schwank et al., Correlation between Co-60 and X-ray radiation-induced charge buildup in silicon-on-insulator buried oxides, IEEE NUCL S, 47(6), 2000, pp. 2175-2182
New insights into fully-depleted SOI transistor response after total-dose irradiation
Authors: Schwank, JR Shaneyfelt, MR Dodd, PE Burns, JA Keast, CL Wyatt, PW
Citation: Jr. Schwank et al., New insights into fully-depleted SOI transistor response after total-dose irradiation, IEEE NUCL S, 47(3), 2000, pp. 604-612
Time-resolved ion beam induced charge collection (TRIBICC) in micro-electronics
Authors: Schone, N Walsh, DS Sexton, FW Doyle, BL Dodd, PE Aurand, JF Wing, N
Citation: N. Schone et al., Time-resolved ion beam induced charge collection (TRIBICC) in micro-electronics, NUCL INST B, 158(1-4), 1999, pp. 424-431
BUSFET - A radiation-hardened SOI transistor
Authors: Schwank, JR Shaneyfelt, MR Draper, BL Dodd, PE
Citation: Jr. Schwank et al., BUSFET - A radiation-hardened SOI transistor, IEEE NUCL S, 46(6), 1999, pp. 1809-1816
Impact of ion energy on single-event upset
Authors: Dodd, PE Musseau, O Shaneyfelt, MR Sexton, FW D'hose, C Hash, GL Martinez, M Loemker, RA Leray, JL Winokur, PS
Citation: Pe. Dodd et al., Impact of ion energy on single-event upset, IEEE NUCL S, 45(6), 1998, pp. 2483-2491
Precursor ion damage and angular dependence of single event gate rupture in thin oxides
Authors: Sexton, FW Fleetwood, DM Shaneyfelt, MR Dodd, PE Hash, GL Schanwald, LP Loemker, RA Krisch, KS Green, ML Weir, BE Silverman, PJ
Citation: Fw. Sexton et al., Precursor ion damage and angular dependence of single event gate rupture in thin oxides, IEEE NUCL S, 45(6), 1998, pp. 2509-2518
Time-resolved ion beam induced charge collection (TRIBICC) in micro-electronics
Authors: Schone, H Walsh, DS Sexton, FW Doyle, BL Dodd, PE Aurand, JF Flores, RS Wing, N
Citation: H. Schone et al., Time-resolved ion beam induced charge collection (TRIBICC) in micro-electronics, IEEE NUCL S, 45(6), 1998, pp. 2544-2549
Challenges in hardening technologies using shallow-trench isolation
Authors: Shaneyfelt, MR Dodd, PE Draper, BL Flores, RS
Citation: Mr. Shaneyfelt et al., Challenges in hardening technologies using shallow-trench isolation, IEEE NUCL S, 45(6), 1998, pp. 2584-2592
Risultati: 1-11 |