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Results:
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Results: 16
Authors:
Bournel, A
Delmouly, V
Dollfus, P
Tremblay, G
Hesto, P
Citation: A. Bournel et al., Theoretical and experimental considerations on the spin field effect transistor, PHYSICA E, 10(1-3), 2001, pp. 86-90
Authors:
Dollfus, P
Galdin, S
Hesto, P
Osten, HJ
Citation: P. Dollfus et al., Band offsets and electron transport calculation for strained Si1-x-yGexCy/Si heterostructures, J MAT S-M E, 12(4-6), 2001, pp. 245-248
Authors:
Cassan, E
Dollfus, P
Galdin, S
Citation: E. Cassan et al., Wave-mechanical study of gate tunneling leakage reduction in ultra-thin (<2 nm) dielectric MOS and H-MOS devices, J NON-CRYST, 280(1-3), 2001, pp. 63-68
Authors:
Cassan, E
Dollfus, P
Galdin, S
Hesto, P
Citation: E. Cassan et al., Semiclassical and wave-mechanical modeling of charge control and direct tunneling leakage in MOS and H-MOS devices with ultrathin oxides, IEEE DEVICE, 48(4), 2001, pp. 715-721
Comparison between device simulators for gate current calculation in ultra-thin gate oxide n-MOSFETs
Authors:
Cassan, E
Galdin, S
Dollfus, P
Hesto, P
Citation: E. Cassan et al., Comparison between device simulators for gate current calculation in ultra-thin gate oxide n-MOSFETs, IEICE TR EL, E83C(8), 2000, pp. 1194-1202
Authors:
Galdin, S
Dollfus, P
Aubry-Fortuna, V
Hesto, P
Osten, HJ
Citation: S. Galdin et al., Band offset predictions for strained group IV alloys: Si1-x-yGexCy on Si(001) and Si1-xGex on Si1-zGez(001), SEMIC SCI T, 15(6), 2000, pp. 565-572
Authors:
Cassan, E
Dollfus, P
Galdin, S
Hesto, P
Citation: E. Cassan et al., Calculation of direct tunneling gate current through ultra-thin oxide and oxide/nitride stacks in MOSFETs and H-MOSFETs, MICROEL REL, 40(4-5), 2000, pp. 585-588
Authors:
Dollfus, P
Galdin, S
Hesto, P
Velazquez, JE
Citation: P. Dollfus et al., Monte Carlo study of sub-0.1 mu m Si0.97C0.03/Si MODFET: Electron transport and device performance, IEEE DEVICE, 47(6), 2000, pp. 1247-1250
Authors:
Bournel, A
Dollfus, P
Cassan, E
Hesto, P
Citation: A. Bournel et al., Monte Carlo study of spin relaxation in AlGaAs/GaAs quantum wells, APPL PHYS L, 77(15), 2000, pp. 2346-2348
Authors:
Kovindha, A
Dollfus, P
Citation: A. Kovindha et P. Dollfus, Workshop on Spinal Cord Injuries (SCI) Management: the Chiang Mai Experience, SPINAL CORD, 37(3), 1999, pp. 218-220
Authors:
Dollfus, P
Galdin, S
Hesto, P
Citation: P. Dollfus et al., Monte-Carlo investigation of in-plane electron transport in tensile strained Si and Si1-yCy (y <= 0.03), EPJ-APPL PH, 7(1), 1999, pp. 73-77
Authors:
Bournel, A
Dollfus, P
Bruno, P
Hesto, P
Citation: A. Bournel et al., Spin-dependent transport phenomena in a HEMT, PHYSICA B, 272(1-4), 1999, pp. 331-334
Authors:
Cassan, E
Galdin, S
Dollfus, P
Hesto, P
Citation: E. Cassan et al., Analysis of electron energy distribution function in ultra-thin gate oxiden-MOSFETs using Monte Carlo simulation for direct tunneling gate current calculation, PHYSICA B, 272(1-4), 1999, pp. 550-553
Authors:
Galdin, S
Arbey, ME
Dollfus, P
Hesto, P
Citation: S. Galdin et al., Accurate analytical delay expression for short channel CMOS SOI inverter using Monte Carlo simulation, SOL ST ELEC, 43(10), 1999, pp. 1869-1877
Authors:
Cassan, E
Galdin, S
Dollfus, P
Hesto, P
Citation: E. Cassan et al., Study of direct tunneling through ultrathin gate oxide of field effect transistors using Monte Carlo simulation, J APPL PHYS, 86(7), 1999, pp. 3804-3811
Authors:
Bournel, A
Dollfus, P
Bruno, P
Hesto, P
Citation: A. Bournel et al., Gate-induced spin precession in an In0.53Ga0.47As two dimensional electrongas, EPJ-APPL PH, 4(1), 1998, pp. 1-4
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