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Results: 1-25 | 26-31
Results: 1-25/31
Type-II Ge/Si quantum dots
Authors: Dvurechenskii, AV Yakimov, AI
Citation: Av. Dvurechenskii et Ai. Yakimov, Type-II Ge/Si quantum dots, SEMICONDUCT, 35(9), 2001, pp. 1095-1105
Contribution of the electron-electron interaction to the optical properties of dense arrays of Ge/Si quantum dots
Authors: Yakimov, AI Dvurechenskii, AV Stepina, NP Nikiforov, AI Nenashev, AV
Citation: Ai. Yakimov et al., Contribution of the electron-electron interaction to the optical properties of dense arrays of Ge/Si quantum dots, J EXP TH PH, 92(3), 2001, pp. 500-513
Interaction effects in an arrays of Ge/Si quantum dots
Authors: Dvurechenskii, AV Yakimov, AI
Citation: Av. Dvurechenskii et Ai. Yakimov, Interaction effects in an arrays of Ge/Si quantum dots, IAN FIZ, 65(2), 2001, pp. 187-191
Interband absorption in charged Ge/Si type-II quantum dots - art. no. 045312
Authors: Yakimov, AI Stepina, NP Dvurechenskii, AV Nikiforov, AI Nenashev, AV
Citation: Ai. Yakimov et al., Interband absorption in charged Ge/Si type-II quantum dots - art. no. 045312, PHYS REV B, 6304(4), 2001, pp. 5312
Interlevel Ge/Si quantum dot infrared photodetector
Authors: Yakimov, AI Dvurechenskii, AV Nikiforov, AI Proskuryakov, YY
Citation: Ai. Yakimov et al., Interlevel Ge/Si quantum dot infrared photodetector, J APPL PHYS, 89(10), 2001, pp. 5676-5681
Self-organization of an ensemble of Ge nanoclusters upon pulsed irradiation with low-energy ions during heteroepitaxy on Si
Authors: Dvurechenskii, AV Zinov'ev, VA Smagina, ZV
Citation: Av. Dvurechenskii et al., Self-organization of an ensemble of Ge nanoclusters upon pulsed irradiation with low-energy ions during heteroepitaxy on Si, JETP LETTER, 74(5), 2001, pp. 267-269
Spatial separation of electrons in Ge/Si(001) heterostructures with quantum dots
Authors: Yakimov, AI Dvurechenskii, AV Nikiforov, AI
Citation: Ai. Yakimov et al., Spatial separation of electrons in Ge/Si(001) heterostructures with quantum dots, JETP LETTER, 73(10), 2001, pp. 529-531
Long-range Coulomb interaction in arrays of self-assembled quantum dots
Authors: Yakimov, AI Dvurechenskii, AV Kirienko, VV Yakovlev, YI Nikiforov, AI Adkins, CJ
Citation: Ai. Yakimov et al., Long-range Coulomb interaction in arrays of self-assembled quantum dots, PHYS REV B, 61(16), 2000, pp. 10868-10876
Silicon-germanium nanostructures with quantum dots: Formation mechanisms and electrical properties
Authors: Pchelyakov, OP Bolkhovityanov, YB Dvurechenskii, AV Sokolov, LV Nikiforov, AI Yakimov, AI Voigtlander, B
Citation: Op. Pchelyakov et al., Silicon-germanium nanostructures with quantum dots: Formation mechanisms and electrical properties, SEMICONDUCT, 34(11), 2000, pp. 1229-1247
Spatial distribution of elastic deformations in Ge/Si structures with quantum dots
Authors: Nenashev, AV Dvurechenskii, AV
Citation: Av. Nenashev et Av. Dvurechenskii, Spatial distribution of elastic deformations in Ge/Si structures with quantum dots, J EXP TH PH, 91(3), 2000, pp. 497-503
Hopping transport through an ensemble of Ge self-assembled quantum dots
Authors: Yakimov, AI Dvurechenskii, AV Nikiforov, AI Adkins, CJ
Citation: Ai. Yakimov et al., Hopping transport through an ensemble of Ge self-assembled quantum dots, PHYS ST S-B, 218(1), 2000, pp. 99-105
Mechanism of two-level hopping current fluctuations in mesoscopic a-Si based structures
Authors: Stepina, NP Yakimov, AI Dvurechenskii, AV
Citation: Np. Stepina et al., Mechanism of two-level hopping current fluctuations in mesoscopic a-Si based structures, PHYS ST S-B, 218(1), 2000, pp. 155-158
Electrical characterization and photoconduction of Ge/Si dense quatum dotsarrays
Authors: Dvurechenskii, AV Yakimov, AI
Citation: Av. Dvurechenskii et Ai. Yakimov, Electrical characterization and photoconduction of Ge/Si dense quatum dotsarrays, IAN FIZ, 64(2), 2000, pp. 288-293
Excitons in charged Ge/Si type-II quantum dots
Authors: Yakimov, AI Stepina, NP Dvurechenskii, AV Nikiforov, AI Nenashev, AV
Citation: Ai. Yakimov et al., Excitons in charged Ge/Si type-II quantum dots, SEMIC SCI T, 15(12), 2000, pp. 1125-1130
Evidence for a negative interband photoconductivity in arrays of Ge/Si type-II quantum dots
Authors: Yakimov, AI Dvurechenskii, AV Nikiforov, AI Pchelyakov, OP Nenashev, AV
Citation: Ai. Yakimov et al., Evidence for a negative interband photoconductivity in arrays of Ge/Si type-II quantum dots, PHYS REV B, 62(24), 2000, pp. R16283-R16286
Depolarization shift of the in-plane polarized interlevel resonance in a dense array of quantum dots
Authors: Yakimov, AI Dvurechenskii, AV Stepina, NP Nikiforov, AI
Citation: Ai. Yakimov et al., Depolarization shift of the in-plane polarized interlevel resonance in a dense array of quantum dots, PHYS REV B, 62(15), 2000, pp. 9939-9942
Interlevel optical transitions and many-body effects in a dense array of Ge/Si quantum dots
Authors: Yakimov, AI Dvurechenskii, AV Stepina, NP Nikiforov, AI
Citation: Ai. Yakimov et al., Interlevel optical transitions and many-body effects in a dense array of Ge/Si quantum dots, THIN SOL FI, 380(1-2), 2000, pp. 82-85
In situ RHEED control of self-organized Ge quantum dots
Authors: Nikiforov, AI Cherepanov, VA Pchelyakov, OP Dvurechenskii, AV Yakimov, AI
Citation: Ai. Nikiforov et al., In situ RHEED control of self-organized Ge quantum dots, THIN SOL FI, 380(1-2), 2000, pp. 158-163
Molecular beam epitaxy of silicon-germanium nanostructures
Authors: Pchelyakov, OP Bolkhovityanova, YB Dvurechenskii, AV Nikiforov, AI Yakimov, AI Voigtlander, B
Citation: Op. Pchelyakov et al., Molecular beam epitaxy of silicon-germanium nanostructures, THIN SOL FI, 367(1-2), 2000, pp. 75-84
Negative interband photoconductivity in Ge/Si heterostructures with quantum dots of the second type
Authors: Yakimov, AI Dvurechenskii, AV Nikiforov, AI Pchelyakov, OP
Citation: Ai. Yakimov et al., Negative interband photoconductivity in Ge/Si heterostructures with quantum dots of the second type, JETP LETTER, 72(4), 2000, pp. 186-189
Effects of low-energy ion beam action on Ge/Si heteroepitaxy from molecular beam
Authors: Dvurechenskii, AV Zinovyev, VA Kudryavtsev, VA Smagina, ZV
Citation: Av. Dvurechenskii et al., Effects of low-energy ion beam action on Ge/Si heteroepitaxy from molecular beam, JETP LETTER, 72(3), 2000, pp. 131-133
Oscillations of hopping conductance in an array of charge-tunable self-assembled quantum dots
Authors: Yakimov, AI Dvurechenskii, AV Kirienko, VV Nikiforov, AI Adkins, CJ
Citation: Ai. Yakimov et al., Oscillations of hopping conductance in an array of charge-tunable self-assembled quantum dots, J PHYS-COND, 11(48), 1999, pp. 9715-9722
Charging dynamics and electronic structure of excited state in Ge self-assembled quantum dots
Authors: Yakimov, AI Dvurechenskii, AV Nikiforov, AI Pchelyakov, OP
Citation: Ai. Yakimov et al., Charging dynamics and electronic structure of excited state in Ge self-assembled quantum dots, PHYS LOW-D, 3-4, 1999, pp. 99-109
Modelling of initial stage of silicon epitaxy on porous silicon (111) surface
Authors: Novikov, PL Aleksandrov, LN Dvurechenskii, AV Zinovyev, VA
Citation: Pl. Novikov et al., Modelling of initial stage of silicon epitaxy on porous silicon (111) surface, PHYS LOW-D, 1-2, 1999, pp. 179-187
Hopping conduction and field effect in Si modulation-doped structures withembedded Ge quantum dots
Authors: Biskupski, G Adkins, CJ Boucher, R Dvurechenskii, AV Nikiforov, AI Pchelyakov, OP Biskupski, G
Citation: G. Biskupski et al., Hopping conduction and field effect in Si modulation-doped structures withembedded Ge quantum dots, PHYS REV B, 59(19), 1999, pp. 12598-12603
Risultati: 1-25 | 26-31