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Results:
1-8
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Results: 8
Authors:
CHOI HK
TURNER GW
EGLASH SJ
Citation: Hk. Choi et al., HIGH-POWER GAINASSB-ALGAASSB MULTIPLE-QUANTUM-WELL DIODE-LASERS EMITTING AT 1.9 MU-M, IEEE photonics technology letters, 6(1), 1994, pp. 7-9
Authors:
BROWN ER
EGLASH SJ
TURNER GW
PARKER CD
PANTANO JV
CALAWA DR
Citation: Er. Brown et al., EFFECT OF LATTICE-MISMATCHED GROWTH ON INAS ALSB RESONANT-TUNNELING DIODES/, I.E.E.E. transactions on electron devices, 41(6), 1994, pp. 879-882
Authors:
EGLASH SJ
CHOI HK
Citation: Sj. Eglash et Hk. Choi, INASSB ALASSB DOUBLE-HETEROSTRUCTURE DIODE-LASERS EMITTING AT 4 MU-M/, Applied physics letters, 64(7), 1994, pp. 833-835
Authors:
LE HQ
TURNER GW
EGLASH SJ
CHOI HK
COPPETA DA
Citation: Hq. Le et al., HIGH-POWER DIODE-LASER-PUMPED INASSB GASB AND GAINASSB/GASB LASERS EMITTING FROM 3-MU-M TO 4-MU-M/, Applied physics letters, 64(2), 1994, pp. 152-154
Authors:
CHOI HK
EGLASH SJ
TURNER GW
Citation: Hk. Choi et al., DOUBLE-HETEROSTRUCTURE DIODE-LASERS EMITTING AT 3-MU-M WITH A METASTABLE GAINASSB ACTIVE LAYER AND ALGAASSB CLADDING LAYERS, Applied physics letters, 64(19), 1994, pp. 2474-2476
Authors:
CHOI HK
WALPOLE JN
TURNER GW
EGLASH SJ
MISSAGGIA LJ
CONNORS MK
Citation: Hk. Choi et al., GAINASSB-ALGAASSB TAPERED LASERS EMITTING AT 2-MU-M, IEEE photonics technology letters, 5(10), 1993, pp. 1117-1119
Authors:
POLYAKOV AY
EGLASH SJ
MILNES AG
YE M
PEARTON SJ
WILSON RG
Citation: Ay. Polyakov et al., ELECTRICAL-PROPERTIES OF MBE GROWN LAYERS OF ALGAASSB AND THE EFFECTSOF PROTON IMPLANTATION AND HYDROGEN PLASMA TREATMENT, Journal of crystal growth, 127(1-4), 1993, pp. 728-731
Authors:
CHOI HK
EGLASH SJ
CONNORS MK
Citation: Hk. Choi et al., SINGLE-FREQUENCY GALNASSB ALGAASSB QUANTUM-WELL RIDGE-WAVE-GUIDE LASERS EMITTING AT 2.1 MU-M/, Applied physics letters, 63(24), 1993, pp. 3271-3272
Risultati:
1-8
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