ACNP - Italian Periodicals Catalogue

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Results: 1-25 |

Results: 25

OPTICAL-PROPERTIES AND MICROSTRUCTURE OF INGAN GROWN BY MOLECULAR-BEAM EPITAXY

Authors: BOTTCHER T EINFELDT S FIGGE S KIRCHNER V HOMMEL D SELKE H RYDER PL BERTRAM F RIEMANN T CHRISTEN J LUNZ U BECKER CR

Citation: T. Bottcher et al., OPTICAL-PROPERTIES AND MICROSTRUCTURE OF INGAN GROWN BY MOLECULAR-BEAM EPITAXY, Acta Physica Polonica. A, 94(2), 1998, pp. 260-264

THERMALLY-INDUCED STRAIN IN MBE GROWN GAN LAYERS

Authors: HEINKE H KIRCHNER V EINFELDT S BIRKLE U HOMMEL D

Citation: H. Heinke et al., THERMALLY-INDUCED STRAIN IN MBE GROWN GAN LAYERS, Journal of crystal growth, 190, 1998, pp. 375-379

EXCITONIC TRANSITIONS IN MBE GROWN H-GAN WITH CUBIC INCLUSIONS

Authors: STRAUF S MICHLER P GUTOWSKI J SELKE H BIRKLE U EINFELDT S HOMMEL D

Citation: S. Strauf et al., EXCITONIC TRANSITIONS IN MBE GROWN H-GAN WITH CUBIC INCLUSIONS, Journal of crystal growth, 190, 1998, pp. 682-686

IMPACT OF DEFECTS ON THE CARRIER TRANSPORT IN GAN

Authors: FEHRER M EINFELDT S BIRKLE U GOLLNIK T HOMMEL D

Citation: M. Fehrer et al., IMPACT OF DEFECTS ON THE CARRIER TRANSPORT IN GAN, Journal of crystal growth, 190, 1998, pp. 763-767

ANALYSIS OF DEEP TRAPS IN HEXAGONAL MOLECULAR-BEAM EPITAXY-GROWN GAN BY ADMITTANCE SPECTROSCOPY

Authors: KRTSCHIL A WITTE H LISKER M CHRISTEN J BIRKLE U EINFELDT S HOMMEL D

Citation: A. Krtschil et al., ANALYSIS OF DEEP TRAPS IN HEXAGONAL MOLECULAR-BEAM EPITAXY-GROWN GAN BY ADMITTANCE SPECTROSCOPY, Journal of applied physics, 84(4), 1998, pp. 2040-2043

PRECONDITIONING OF C-PLANE SAPPHIRE FOR GAN MOLECULAR-BEAM EPITAXY BYELECTRON-CYCLOTRON-RESONANCE PLASMA NITRIDATION

Authors: HEINLEIN C GREPSTAD JK EINFELDT S HOMMEL D BERGE T

Citation: C. Heinlein et al., PRECONDITIONING OF C-PLANE SAPPHIRE FOR GAN MOLECULAR-BEAM EPITAXY BYELECTRON-CYCLOTRON-RESONANCE PLASMA NITRIDATION, Journal of applied physics, 83(11), 1998, pp. 6023-6027

INCORPORATION OF INDIUM DURING MOLECULAR-BEAM EPITAXY OF INGAN

Authors: BOTTCHER T EINFELDT S KIRCHNER V FIGGE S HEINKE H HOMMEL D SELKE H RYDER PL

Citation: T. Bottcher et al., INCORPORATION OF INDIUM DURING MOLECULAR-BEAM EPITAXY OF INGAN, Applied physics letters, 73(22), 1998, pp. 3232-3234

PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY GROWTH OF GAN

Authors: EINFELDT S BIRKLE U THOMAS C FEHRER M HEINKE H HOMMEL D

Citation: S. Einfeldt et al., PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY GROWTH OF GAN, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 12-15

RAMAN SIGNALS AND PHONON SIDE-BAND UNDER RESONANT EXCITATION OF DONOR-ACCEPTOR-PAIR STATES - SPECTROSCOPY WITH ENHANCED SENSITIVITY TO LOCAL VIBRATIONAL EXCITATIONS

Authors: KRAUS J KURTZ E EINFELDT S HOMMEL D LUGAUER H WAAG A

Citation: J. Kraus et al., RAMAN SIGNALS AND PHONON SIDE-BAND UNDER RESONANT EXCITATION OF DONOR-ACCEPTOR-PAIR STATES - SPECTROSCOPY WITH ENHANCED SENSITIVITY TO LOCAL VIBRATIONAL EXCITATIONS, Semiconductor science and technology, 11(9), 1996, pp. 1255-1262

THE SHALLOW COMPENSATING DONORS IN MOLECULAR-BEAM EPITAXY-GROWN ZNSE-N

Authors: ALBERT D KRAUS J KURTZ E EINFELDT S NURNBERGER J HOMMEL D

Citation: D. Albert et al., THE SHALLOW COMPENSATING DONORS IN MOLECULAR-BEAM EPITAXY-GROWN ZNSE-N, Solid state communications, 97(11), 1996, pp. 909-912

RAMAN-SPECTROSCOPY AND SELECTIVE PAIR LUMINESCENCE ON ZNSE-N

Authors: ALBERT D KRAUS J KURTZ E EINFELDT S HOMMEL D

Citation: D. Albert et al., RAMAN-SPECTROSCOPY AND SELECTIVE PAIR LUMINESCENCE ON ZNSE-N, Journal of crystal growth, 159(1-4), 1996, pp. 276-279

NOVEL RESULTS ON COMPENSATION PROCESSES IN ZNSE-N

Authors: KURTZ E NURNBERGER J JOBST B BAUMANN H KUTTLER M EINFELDT S HOMMEL D LANDWEHR G BETHGE K BIMBERG D

Citation: E. Kurtz et al., NOVEL RESULTS ON COMPENSATION PROCESSES IN ZNSE-N, Journal of crystal growth, 159(1-4), 1996, pp. 289-292

ON THE GROWTH AND DOPING OF BLUE-GREEN EMITTING ZNSE LASER-DIODES

Authors: HOMMEL D BEHR T KURTZ E JOBST B SCHULL K JAKOBS A NURNBERGER J EINFELDT S BEHRINGER M LANDWEHR G

Citation: D. Hommel et al., ON THE GROWTH AND DOPING OF BLUE-GREEN EMITTING ZNSE LASER-DIODES, Journal of crystal growth, 159(1-4), 1996, pp. 566-572

CORRELATION BETWEEN CRYSTAL DEFECTS AND THE BAND-GAP OF EPITAXIALLY GROWN HG1-XZNXSE ON GAAS(001)

Authors: BEHR T EINFELDT S HOMMEL D BECKER CR LANDWEHR G CERVA H

Citation: T. Behr et al., CORRELATION BETWEEN CRYSTAL DEFECTS AND THE BAND-GAP OF EPITAXIALLY GROWN HG1-XZNXSE ON GAAS(001), Journal of crystal growth, 159(1-4), 1996, pp. 1123-1127

TEMPERATURE-DEPENDENCE OF THE ENERGY-GAP OF ZINCBLENDE CDSE AND CD(1-X)ZN(X)E EPITAXIAL LAYERS

Authors: LUNZ U KUHN J GOSCHENHOFER F SCHUSSLER U EINFELDT S BECKER CR LANDWEHR G

Citation: U. Lunz et al., TEMPERATURE-DEPENDENCE OF THE ENERGY-GAP OF ZINCBLENDE CDSE AND CD(1-X)ZN(X)E EPITAXIAL LAYERS, Journal of applied physics, 80(12), 1996, pp. 6861-6863

P-TYPE DOPING OF ZNSE - ON THE PROPERTIES OF NITROGEN IN ZNSE-N

Authors: KURTZ E EINFELDT S NURNBERGER J ZERLAUTH S HOMMEL D LANDWEHR G

Citation: E. Kurtz et al., P-TYPE DOPING OF ZNSE - ON THE PROPERTIES OF NITROGEN IN ZNSE-N, Physica status solidi. b, Basic research, 187(2), 1995, pp. 393-399

ELECTRICAL CONTACTS TO P-ZNSE BASED ON HGSE AND ZNTE

Authors: EINFELDT S BEHRINGER M NURNBERGER J HEINKE H BEHR T BECKER CR HOMMEL D LANDWEHR G

Citation: S. Einfeldt et al., ELECTRICAL CONTACTS TO P-ZNSE BASED ON HGSE AND ZNTE, Physica status solidi. b, Basic research, 187(2), 1995, pp. 439-450

OPTICAL-PROPERTIES OF HGSE

Authors: EINFELDT S GOSCHENHOFER F BECKER CR LANDWEHR G

Citation: S. Einfeldt et al., OPTICAL-PROPERTIES OF HGSE, Physical review. B, Condensed matter, 51(8), 1995, pp. 4915-4925

APPLICATION OF THE MODEL OF THE RELAXATION LINE IN RECIPROCAL SPACE TO II-VI HETEROSTRUCTURES

Authors: HEINKE H EINFELDT S KUHNHEINRICH B PLAHL G MOLLER MO LANDWEHR G

Citation: H. Heinke et al., APPLICATION OF THE MODEL OF THE RELAXATION LINE IN RECIPROCAL SPACE TO II-VI HETEROSTRUCTURES, Journal of physics. D, Applied physics, 28(4A), 1995, pp. 104-108

MOLECULAR-BEAM EPITAXIAL-GROWTH AND SEGREGATION OF HG1-XZNXSE ALLOYS

Authors: EINFELDT S LUNZ U HEINKE H BECKER CR LANDWEHR G

Citation: S. Einfeldt et al., MOLECULAR-BEAM EPITAXIAL-GROWTH AND SEGREGATION OF HG1-XZNXSE ALLOYS, Journal of crystal growth, 146(1-4), 1995, pp. 427-432

OPTICAL-PROPERTIES OF ZN1-XMGXSYSE1-Y EPITAXIAL LAYERS FOR BLUE-GREENLASER APPLICATIONS

Authors: LUNZ U JOBST B EINFELDT S BECKER CR HOMMEL D LANDWEHR G

Citation: U. Lunz et al., OPTICAL-PROPERTIES OF ZN1-XMGXSYSE1-Y EPITAXIAL LAYERS FOR BLUE-GREENLASER APPLICATIONS, Journal of applied physics, 77(10), 1995, pp. 5377-5380

EPITAXIAL OVERGROWTH OF II-VI COMPOUNDS ON PATTERNED SUBSTRATES

Authors: SCHIKORA D HAUSLEITNER H EINFELDT S BECKER CR WIDMER T GIFTGE C LUBKE K LISCHKA K VONORTENBERG M LANDWEHR G

Citation: D. Schikora et al., EPITAXIAL OVERGROWTH OF II-VI COMPOUNDS ON PATTERNED SUBSTRATES, Journal of crystal growth, 138(1-4), 1994, pp. 8-13

THE GROWTH OF HGSE BY MOLECULAR-BEAM EPITAXY FOR OHMIC CONTACTS TO P-ZNSE

Authors: EINFELDT S HEINKE H BEHRINGER M BECKER CR KURTZ E HOMMEL D LANDWEHR G

Citation: S. Einfeldt et al., THE GROWTH OF HGSE BY MOLECULAR-BEAM EPITAXY FOR OHMIC CONTACTS TO P-ZNSE, Journal of crystal growth, 138(1-4), 1994, pp. 471-476

MOLECULAR-BEAM EPITAXIAL-GROWTH AND CHARACTERIZATION OF (100) HGSE ONGAAS

Authors: BECKER CR HE L EINFELDT S WU YS LERONDEL G HEINKE H OEHLING S BICKNELLTASSIUS RN LANDWEHR G

Citation: Cr. Becker et al., MOLECULAR-BEAM EPITAXIAL-GROWTH AND CHARACTERIZATION OF (100) HGSE ONGAAS, Journal of crystal growth, 127(1-4), 1993, pp. 331-334

OXYGEN ON THE (100) CDTE SURFACE

Authors: WU YS BECKER CR WAAG A SCHMIEDL R EINFELDT S LANDWEHR G

Citation: Ys. Wu et al., OXYGEN ON THE (100) CDTE SURFACE, Journal of applied physics, 73(11), 1993, pp. 7385-7388

Risultati: 1-25 |