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Results: 1-25/28
Authors:
AVINUN M
BAREL N
KAPLAN WD
EIZENBERG M
NAIK M
GUO T
CHEN LY
MOSELY R
LITTAU K
ZHOU S
CHEN L
Citation: M. Avinun et al., NUCLEATION AND GROWTH OF CVD-AL ON DIFFERENT TYPES OF TIN, Thin solid films, 320(1), 1998, pp. 67-72
Authors:
CYTERMANN C
HOLZMAN E
BRENER R
FASTOW M
EIZENBERG M
GLUCK M
KIBBEL H
KONIG U
Citation: C. Cytermann et al., DOPANTS EFFECTS ON THE INTERFACIAL REACTION BETWEEN CO AND STRAINED SI0.8GE0.2 LAYERS, Journal of applied physics, 83(4), 1998, pp. 2019-2024
Authors:
PARNIS D
ZOLOTOYABKO E
KAPLAN WD
EIZENBERG M
MOSLEH N
MEYER F
SCHWEBEL C
Citation: D. Parnis et al., STRUCTURAL DISORDER IN SIGE FILMS GROWN EPITAXIALLY ON SI BY ION-BEAMSPUTTER-DEPOSITION, Thin solid films, 294(1-2), 1997, pp. 64-68
Authors:
LYAKAS M
BEREGOVSKY M
EIZENBERG M
MEYER F
Citation: M. Lyakas et al., ELECTRICAL-PROPERTIES OF THE TI(SIGE)(2) SI0.89GE0.11/SI(001) CONTACTSYSTEM/, Journal of applied physics, 82(4), 1997, pp. 1716-1722
Authors:
LYAKAS M
PARNIS D
KAPLAN WD
ZOLOTOYABKO E
EIZENBERG M
DEMUTH V
STRUNK HP
Citation: M. Lyakas et al., UNUSUAL STRAIN RELAXATION IN SIGE SI HETEROSTRUCTURES/, Applied physics letters, 70(10), 1997, pp. 1287-1289
Authors:
TAMIR S
ZAHAVI J
KOMEM Y
EIZENBERG M
Citation: S. Tamir et al., PROCESS OPTIMIZATION AND RELATED MATERIAL PROPERTIES OF SILICON FILMSPRODUCED BY LASER-INDUCED CHEMICAL-VAPOR-DEPOSITION FROM SILANE, Journal of Materials Science, 31(4), 1996, pp. 1013-1019
Authors:
LEVIT M
GRIMBERG I
WEISS BZ
EIZENBERG M
Citation: M. Levit et al., INTERACTION BETWEEN NI90TI10 ALLOY THIN-FILM AND SI SINGLE-CRYSTAL, Journal of applied physics, 79(2), 1996, pp. 1179-1181
Authors:
EYAL A
BRENER R
BESERMAN R
EIZENBERG M
ATZMON Z
SMITH DJ
MAYER JW
Citation: A. Eyal et al., THE EFFECT OF CARBON ON STRAIN RELAXATION AND PHASE-FORMATION IN THE TI SI1-X-YGEXCY/SI CONTACT SYSTEM/, Applied physics letters, 69(1), 1996, pp. 64-66
Authors:
DANEK M
LIAO M
TSENG J
LITTAU K
SAIGAL D
ZHANG H
MOSELY R
EIZENBERG M
Citation: M. Danek et al., RESISTIVITY REDUCTION AND CHEMICAL STABILIZATION CT ORGANOMETALLIC CHEMICAL-VAPOR-DEPOSITED TITANIUM NITRIDE BY NITROGEN RF PLASMA, Applied physics letters, 68(7), 1996, pp. 1015-1016
Authors:
EIZENBERG M
Citation: M. Eizenberg, CHEMICAL-VAPOR-DEPOSITION OF TIN FOR SUB-0.5-MU-M ULSI CIRCUITS, MRS bulletin, 20(11), 1995, pp. 38-41
Authors:
EIZENBERG M
LITTAU K
GHANAYEM S
LIAO M
MOSELY R
SINHA AK
Citation: M. Eizenberg et al., CHEMICAL-VAPOR-DEPOSITED TICN - A NEW BARRIER METALLIZATION FOR SUBMICRON VIA AND CONTACT APPLICATIONS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(3), 1995, pp. 590-595
Authors:
GLUCK M
SCHUPPEN A
ROSLER M
HEINRICH W
HERSENER J
KONIG U
YAM O
CYTERMANN C
EIZENBERG M
Citation: M. Gluck et al., COSI2 AND TISI2 FOR SI SIGE HETERODEVICES, Thin solid films, 270(1-2), 1995, pp. 549-554
Authors:
TAMIR S
KOMEM Y
EIZENBERG M
ZAHAVI J
Citation: S. Tamir et al., GROWTH MECHANISMS OF SILICON FILMS PRODUCED BY LASER-INDUCED CHEMICAL-VAPOR-DEPOSITION, Thin solid films, 261(1-2), 1995, pp. 251-255
Authors:
LYAKAS M
ZAHARIA R
EIZENBERG M
Citation: M. Lyakas et al., ANALYSIS OF NONIDEAL SCHOTTKY AND P-N-JUNCTION DIODES - EXTRACTION OFPARAMETERS FROM I-V PLOTS, Journal of applied physics, 78(9), 1995, pp. 5481-5489
Authors:
LYAKAS M
ARAZI T
EIZENBERG M
DEMUTH V
STRUNK HP
MOSLEH N
MEYER F
SCHWEBEL C
Citation: M. Lyakas et al., EFFECT OF GROWTH-CONDITIONS ON THE STRUCTURAL-PROPERTIES OF ION-BEAM SPUTTER-DEPOSITED SIGE EPILAYERS, Journal of applied physics, 78(8), 1995, pp. 4975-4981
Authors:
EDELMAN F
BRENER R
CYTERMANN C
EIZENBERG M
WEIL R
BEYER W
Citation: F. Edelman et al., FAST INTERFACIAL OXIDATION OF AMORPHOUS SI1-XGEX-H BY SNO2, Applied physics letters, 67(3), 1995, pp. 389-391
Authors:
MOSLEH N
MEYER F
SCHWEBEL C
PELLET C
EIZENBERG M
Citation: N. Mosleh et al., GROWTH MODE OF GE FILMS ON SI(100) SUBSTRATE DEPOSITED BY ION-BEAM SPUTTERING, Thin solid films, 246(1-2), 1994, pp. 30-34
Authors:
EIZENBERG M
MEYER F
BENHOCINE A
BOUCHIER D
Citation: M. Eizenberg et al., REACTIVE-ION-BEAM-SPUTTERED WNX FILMS ON SILICON - GROWTH MODE AND ELECTRICAL-PROPERTIES, Journal of applied physics, 75(8), 1994, pp. 3900-3907
Authors:
ATZMON Z
EIZENBERG M
SHACHAMDIAMAND Y
MAYER JW
SCHAFFLER F
Citation: Z. Atzmon et al., SOLID-PHASE EPITAXIAL REGROWTH OF SB-IMPLANTED SI1-XGEX STRAINED LAYERS - KINETICS AND ELECTRICAL-PROPERTIES, Journal of applied physics, 75(8), 1994, pp. 3936-3943
Authors:
EDELMAN F
CYTERMANN C
BRENER R
EIZENBERG M
KHAIT YL
WEIL R
BEYER W
Citation: F. Edelman et al., CRYSTALLIZATION IN FLUORINATED AND HYDROGENATED AMORPHOUS-SILICON THIN-FILMS, Journal of applied physics, 75(12), 1994, pp. 7875-7880
Authors:
ATZMON Z
EIZENBERG M
SHACHAMDIAMAND Y
MAYER JW
SCHAFFLER F
Citation: Z. Atzmon et al., LOW-DOSE IMPLANTATION OF SB IN SI1-XGEX EPITAXIAL LAYERS - CORRELATION BETWEEN ELECTRICAL-PROPERTIES AND RADIATION-DAMAGE, Journal of applied physics, 75(1), 1994, pp. 377-381
Authors:
EIZENBERG M
LITTAU K
GHANAYEM S
MAK A
MAEDA Y
CHANG M
SINHA AK
Citation: M. Eizenberg et al., TICN - A NEW CHEMICAL-VAPOR-DEPOSITED CONTACT BARRIER METALLIZATION FOR SUBMICRON DEVICES, Applied physics letters, 65(19), 1994, pp. 2416-2418
Authors:
EDELMAN F
CYTERMANN C
BRENER R
EIZENBERG M
WEIL R
BEYER W
Citation: F. Edelman et al., INTERFACIAL PROCESSES IN THE PD A-GE-H SYSTEM, Applied surface science, 70-1, 1993, pp. 722-726
Authors:
ATZMON Z
EIZENBERG M
ZOLOTOYABKO E
HONG SQ
MAYER JW
SCHAFFLER F
Citation: Z. Atzmon et al., REGROWTH AND STRAIN RECOVERY OF SB IMPLANTED SI1-XGEX STRAINED LAYERS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 751-754
Authors:
EDELMAN F
BRENER R
EIZENBERG M
SADER E
DAFNE Y
Citation: F. Edelman et al., STRESS AND ANISOTROPY EFFECTS IN THE INTERFACIAL REACTIONS OF AL AND TINX, Thin solid films, 228(1-2), 1993, pp. 242-246