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Results: 1-25 | 26-28
Results: 1-25/28
MOLECULAR-BEAM EPITAXY GROWTH AND PROPERTIES OF GAN, INGAN, AND GAN INGAN QUANTUM-WELL STRUCTURES/
Authors: JOHNSON MAL BROWN JD ELMASRY NA COOK JW SCHETZINA JF KONG HS EDMOND JA
Citation: Mal. Johnson et al., MOLECULAR-BEAM EPITAXY GROWTH AND PROPERTIES OF GAN, INGAN, AND GAN INGAN QUANTUM-WELL STRUCTURES/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1282-1285
SAFETY AND IMMUNOGENICITY OF AN ORAL, KILLED ENTEROTOXIGENIC ESCHERICHIA-COLI - CHOLERA-TOXIN-B SUBUNIT VACCINE IN EGYPTIAN ADULTS
Authors: SAVARINO SJ BROWN FM HALL E BASSILY S YOUSSEF F WIERZBA T PERUSKI L ELMASRY NA SAFWAT M RAO M JERTBORN M SVENNERHOLM AM LEE YJ CLEMENS JD
Citation: Sj. Savarino et al., SAFETY AND IMMUNOGENICITY OF AN ORAL, KILLED ENTEROTOXIGENIC ESCHERICHIA-COLI - CHOLERA-TOXIN-B SUBUNIT VACCINE IN EGYPTIAN ADULTS, The Journal of infectious diseases, 177(3), 1998, pp. 796-799
PHASE-SEPARATION IN INGAN GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION
Authors: ELMASRY NA PINER EL LIU SX BEDAIR SM
Citation: Na. Elmasry et al., PHASE-SEPARATION IN INGAN GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Applied physics letters, 72(1), 1998, pp. 40-42
EPITAXIAL DEPOSITION OF GAINN AND INN USING THE ROTATING SUSCEPTOR ALE SYSTEM
Authors: MCINTOSH FG PINER EL ROBERTS JC BEHBEHANI MK AUMER ME ELMASRY NA BEDAIR SM
Citation: Fg. Mcintosh et al., EPITAXIAL DEPOSITION OF GAINN AND INN USING THE ROTATING SUSCEPTOR ALE SYSTEM, Applied surface science, 112, 1997, pp. 98-101
MBE GROWTH AND PROPERTIES OF GAN ON GAN SIC SUBSTRATES/
Authors: JOHNSON MAL FUJITA S ROWLAND WH BOWERS KA HUGHES WC HE YW ELMASRY NA COOK JW SCHETZINA JF REN J EDMOND JA
Citation: Mal. Johnson et al., MBE GROWTH AND PROPERTIES OF GAN ON GAN SIC SUBSTRATES/, Solid-state electronics, 41(2), 1997, pp. 213-218
GROWTH AND CHARACTERIZATION OF IN-BASED NITRIDE COMPOUNDS
Authors: BEDAIR SM MCINTOSH FG ROBERTS JC PINER EL BOUTROS KS ELMASRY NA
Citation: Sm. Bedair et al., GROWTH AND CHARACTERIZATION OF IN-BASED NITRIDE COMPOUNDS, Journal of crystal growth, 178(1-2), 1997, pp. 32-44
IMPURITY DEPENDENCE ON HYDROGEN AND AMMONIA FLOW-RATES IN INGAN BULK FILMS
Authors: PINER EL BEHBEHANI MK ELMASRY NA ROBERTS JC MCINTOSH FG BEDAIR SM
Citation: El. Piner et al., IMPURITY DEPENDENCE ON HYDROGEN AND AMMONIA FLOW-RATES IN INGAN BULK FILMS, Applied physics letters, 71(14), 1997, pp. 2023-2025
EFFECT OF HYDROGEN ON THE INDIUM INCORPORATION IN INGAN EPITAXIAL-FILMS
Authors: PINER EL BEHBEHANI MK ELMASRY NA MCINTOSH FG ROBERTS JC BOUTROS KS BEDAIR SM
Citation: El. Piner et al., EFFECT OF HYDROGEN ON THE INDIUM INCORPORATION IN INGAN EPITAXIAL-FILMS, Applied physics letters, 70(4), 1997, pp. 461-463
IMMUNOGENICITY OF RECOMBINANT HEPATITIS-B VACCINE AMONG INFANTS OF MOTHERS WITH ACTIVE SCHISTOSOMIASIS
Authors: BASSILY S KOTKAT A HYAMS KC YOUSSEF FG ELMASRY NA ARTHUR R IMAM IZ BROWN FM
Citation: S. Bassily et al., IMMUNOGENICITY OF RECOMBINANT HEPATITIS-B VACCINE AMONG INFANTS OF MOTHERS WITH ACTIVE SCHISTOSOMIASIS, The American journal of tropical medicine and hygiene, 57(2), 1997, pp. 197-199
MOLECULAR-BEAM EPITAXY GROWTH AND PROPERTIES OF GAN, ALXGA1-XN, AND ALN ON GAN SIC SUBSTRATES/
Authors: JOHNSON MAL FUJITA S ROWLAND WH BOWERS KA HUGHES WC HE YW ELMASRY NA COOK JW SCHETZINA JF REN J EDMOND JA
Citation: Mal. Johnson et al., MOLECULAR-BEAM EPITAXY GROWTH AND PROPERTIES OF GAN, ALXGA1-XN, AND ALN ON GAN SIC SUBSTRATES/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(3), 1996, pp. 2349-2353
UNDOPED AND DOPED GAN THIN-FILMS DEPOSITED ON HIGH-TEMPERATURE MONOCRYSTALLINE AIN BUFFER LAYERS ON VICINAL AND ON-AXIS ALPHA(6H)-SIC(0001)SUBSTRATES VIA ORGANOMETALLIC VAPOR-PHASE EPITAXY
Authors: WEEKS TW BREMSER MD AILEY KS CARLSON E PERRY WG PINER EL ELMASRY NA DAVIS RF
Citation: Tw. Weeks et al., UNDOPED AND DOPED GAN THIN-FILMS DEPOSITED ON HIGH-TEMPERATURE MONOCRYSTALLINE AIN BUFFER LAYERS ON VICINAL AND ON-AXIS ALPHA(6H)-SIC(0001)SUBSTRATES VIA ORGANOMETALLIC VAPOR-PHASE EPITAXY, Journal of materials research, 11(4), 1996, pp. 1011-1018
MBE GROWTH AND PROPERTIES OF GAN AND ALXGA1-XN ON GAN SIC SUBSTRATES/
Authors: JOHNSON MAL FUJITA S ROWLAND WH HUGHES WC HE YW ELMASRY NA COOK JW SCHETZINA JF REN J EDMOND JA
Citation: Mal. Johnson et al., MBE GROWTH AND PROPERTIES OF GAN AND ALXGA1-XN ON GAN SIC SUBSTRATES/, Journal of electronic materials, 25(5), 1996, pp. 793-797
FERROMAGNETIC TAU-MNAL EPITAXIALLY GROWN ON (100)GAAS SUBSTRATES BY PULSED-LASER DEPOSITION
Authors: ROSIER TM HE YW ELMASRY NA
Citation: Tm. Rosier et al., FERROMAGNETIC TAU-MNAL EPITAXIALLY GROWN ON (100)GAAS SUBSTRATES BY PULSED-LASER DEPOSITION, Materials letters, 26(4-5), 1996, pp. 227-231
GROWTH AND CHARACTERIZATION OF ALINGAN QUATERNARY ALLOYS
Authors: MCINTOSH FG BOUTROS KS ROBERTS JC BEDAIR SM PINER EL ELMASRY NA
Citation: Fg. Mcintosh et al., GROWTH AND CHARACTERIZATION OF ALINGAN QUATERNARY ALLOYS, Applied physics letters, 68(1), 1996, pp. 40-42
LARGE-AREA DEPOSITION OF CD1-XZNXTE ON GAAS AND SI SUBSTRATES BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION
Authors: KARAM NH SUDHARSANAN R MASTROVITO A SANFACON MM SMITH FTJ LEONARD M ELMASRY NA
Citation: Nh. Karam et al., LARGE-AREA DEPOSITION OF CD1-XZNXTE ON GAAS AND SI SUBSTRATES BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Journal of electronic materials, 24(5), 1995, pp. 483-489
BIOCHEMICAL-CHARACTERIZATION OF HUMAN ISOLATES OF BLASTOCYSTIS-HOMINIS
Authors: MANSOUR NS MIKHAIL EM ELMASRY NA SABRY AG MOHAREB EW
Citation: Ns. Mansour et al., BIOCHEMICAL-CHARACTERIZATION OF HUMAN ISOLATES OF BLASTOCYSTIS-HOMINIS, Journal of Medical Microbiology, 42(4), 1995, pp. 304-307
BLUE AND GREEN LIGHT-EMITTING DIODE STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY ON ZNSE SUBSTRATES
Authors: EASON D REN J YU Z HUGHES C COOK JW SCHETZINA JF ELMASRY NA CANTWELL G HARSH WC
Citation: D. Eason et al., BLUE AND GREEN LIGHT-EMITTING DIODE STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY ON ZNSE SUBSTRATES, Journal of crystal growth, 150(1-4), 1995, pp. 718-724
HIGH-QUALITY INGAN FILMS BY ATOMIC LAYER EPITAXY
Authors: BOUTROS KS MCINTOSH FG ROBERTS JC BEDAIR SM PINER EL ELMASRY NA
Citation: Ks. Boutros et al., HIGH-QUALITY INGAN FILMS BY ATOMIC LAYER EPITAXY, Applied physics letters, 67(13), 1995, pp. 1856-1858
BLUE-GREEN ZNSE-ZNCDSE LIGHT-EMITTING-DIODES AND PHOTOPUMPED LASER STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY ON ZNSE SUBSTRATES
Authors: REN J EASON DB YU Z SNEED B COOK JW SCHETZINA JF ELMASRY NA YANG XH SONG JJ CANTWELL G HARSH WC
Citation: J. Ren et al., BLUE-GREEN ZNSE-ZNCDSE LIGHT-EMITTING-DIODES AND PHOTOPUMPED LASER STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY ON ZNSE SUBSTRATES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(2), 1994, pp. 1262-1265
RECENT ADVANCES IN ATOMIC LAYER EPITAXY DEVICES
Authors: BEDAIR SM ELMASRY NA
Citation: Sm. Bedair et Na. Elmasry, RECENT ADVANCES IN ATOMIC LAYER EPITAXY DEVICES, Applied surface science, 82-3, 1994, pp. 7-13
ATOMIC LAYER EPITAXY OF DEVICE-QUALITY ALGAAS AND ALAS
Authors: HAYAFUJI N ELDALLAL GM DIP A COLTER PC ELMASRY NA BEDAIR SM
Citation: N. Hayafuji et al., ATOMIC LAYER EPITAXY OF DEVICE-QUALITY ALGAAS AND ALAS, Applied surface science, 82-3, 1994, pp. 18-22
INTEGRATED HETEROSTRUCTURE DEVICES COMPOSED OF II-VI MATERIALS WITH HG-BASED CONTACT LAYERS
Authors: REN J EASON DB CHURCHILL LE YU Z BONEY C COOK JW SCHETZINA JF ELMASRY NA
Citation: J. Ren et al., INTEGRATED HETEROSTRUCTURE DEVICES COMPOSED OF II-VI MATERIALS WITH HG-BASED CONTACT LAYERS, Journal of crystal growth, 138(1-4), 1994, pp. 455-463
QUATERNARY II-VI ALLOYS FOR BLUE AND GREEN LIGHT-EMITTING DIODE APPLICATIONS
Authors: EASON DB YU Z BONEY C REN J CHURCHILL LE COOK JW SCHETZINA JF ELMASRY NA
Citation: Db. Eason et al., QUATERNARY II-VI ALLOYS FOR BLUE AND GREEN LIGHT-EMITTING DIODE APPLICATIONS, Journal of crystal growth, 138(1-4), 1994, pp. 703-708
REACTION AND REGROWTH CONTROL OF CEO2 ON SI(111) SURFACE FOR THE SILICON-ON-INSULATOR STRUCTURE
Authors: CHIKYOW T BEDAIR SM TYE L ELMASRY NA
Citation: T. Chikyow et al., REACTION AND REGROWTH CONTROL OF CEO2 ON SI(111) SURFACE FOR THE SILICON-ON-INSULATOR STRUCTURE, Applied physics letters, 65(8), 1994, pp. 1030-1032
ELECTRICAL CHARACTERISTICS OF EPITAXIAL CEO2 ON SI(111)
Authors: TYE L ELMASRY NA CHIKYOW T MCLARTY P BEDAIR SM
Citation: L. Tye et al., ELECTRICAL CHARACTERISTICS OF EPITAXIAL CEO2 ON SI(111), Applied physics letters, 65(24), 1994, pp. 3081-3083
Risultati: 1-25 | 26-28