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Results: 1-16 |
Results: 16
OXYGEN AGGREGATION IN CZOCHRALSKI-GROWN SILICON HEAT-TREATED AT 450 DEGREES-C UNDER COMPRESSIVE STRESS
Authors: EMTSEV VV ANDREEV BA MISIUK A JUNG W SCHMALZ K
Citation: Vv. Emtsev et al., OXYGEN AGGREGATION IN CZOCHRALSKI-GROWN SILICON HEAT-TREATED AT 450 DEGREES-C UNDER COMPRESSIVE STRESS, Applied physics letters, 71(2), 1997, pp. 264-266
EFFECT OF GAMMA-IRRADIATION ON THE PROPERTIES OF POROUS SILICON
Authors: ASTROVA EV VITMAN RF EMTSEV VV LEBEDEV AA POLOSKIN DS REMENYUK AD RUD YV
Citation: Ev. Astrova et al., EFFECT OF GAMMA-IRRADIATION ON THE PROPERTIES OF POROUS SILICON, Semiconductors, 30(3), 1996, pp. 279-282
FORMATION OF DEEP THERMAL DONORS IN HEAT-TREATED CZOCHRALSKI SILICON
Authors: EMTSEV VV OGANESYAN GA SCHMALZ K
Citation: Vv. Emtsev et al., FORMATION OF DEEP THERMAL DONORS IN HEAT-TREATED CZOCHRALSKI SILICON, Applied physics letters, 68(17), 1996, pp. 2375-2377
DEGRADATION OF THE PHOTOLUMINESCENCE OF POROUS SILICON CAUSED BY CO-60 GAMMA-RADIATION
Authors: ASTROVA EV EMTSEV VV LEBEDEV AA POLOSKIN DI REMENYUK AD RUD YV KHARTSIEV VE
Citation: Ev. Astrova et al., DEGRADATION OF THE PHOTOLUMINESCENCE OF POROUS SILICON CAUSED BY CO-60 GAMMA-RADIATION, Semiconductors, 29(7), 1995, pp. 674-676
RADIATIVE RECOMBINATION IN GERMANIUM BOMBARDED BY REACTOR NEUTRONS
Authors: BYKOVSKII VA DOBREGO VP DOLGIKH NI EMTSEV VV HALLER EE
Citation: Va. Bykovskii et al., RADIATIVE RECOMBINATION IN GERMANIUM BOMBARDED BY REACTOR NEUTRONS, Semiconductors, 29(12), 1995, pp. 1172-1175
DONOR CENTERS IN CZ-SI CONTAINING MAGNESIUM INTRODUCED BY NUCLEAR-TRANSMUTATION DOPING
Authors: EMTSEV VV POLOSKIN DS SOBOLEV NA SHEK EI
Citation: Vv. Emtsev et al., DONOR CENTERS IN CZ-SI CONTAINING MAGNESIUM INTRODUCED BY NUCLEAR-TRANSMUTATION DOPING, Semiconductors, 28(6), 1994, pp. 624-627
SHALLOW ACCEPTOR CENTERS FORMED DURING DIFFUSION OF ERBIUM IN SILICON
Authors: ALEKSANDROV OV EMTSEV VV POLOSKIN DS SOBOLEV NA SHEK EI
Citation: Ov. Aleksandrov et al., SHALLOW ACCEPTOR CENTERS FORMED DURING DIFFUSION OF ERBIUM IN SILICON, Semiconductors, 28(11), 1994, pp. 1126-1127
STRUCTURAL DEFECTS IN YBA2CU3O7-DELTA SUPERCONDUCTING FILMS INDUCED BY GAMMA-IRRADIATION
Authors: EMTSEV VV DAVYDOV VY KARMANENKO SF POLOSKIN DS GONCHARUK IN
Citation: Vv. Emtsev et al., STRUCTURAL DEFECTS IN YBA2CU3O7-DELTA SUPERCONDUCTING FILMS INDUCED BY GAMMA-IRRADIATION, Physica. C, Superconductivity, 228(1-2), 1994, pp. 165-170
FORMATION AND ANNEALING OF POINTED DEFECT S OF A STRUCTURE IN YBA2CU3O7-DELTA EPITAXIAL-FILMS EXPOSED TO THE GAMMA-RADIATION
Authors: EMTSEV VV DAVYDOV VY KARMANENKO SF POLOSKIN DS GONCHARUK IN
Citation: Vv. Emtsev et al., FORMATION AND ANNEALING OF POINTED DEFECT S OF A STRUCTURE IN YBA2CU3O7-DELTA EPITAXIAL-FILMS EXPOSED TO THE GAMMA-RADIATION, Fizika tverdogo tela, 36(10), 1994, pp. 2968-2974
ON THE NATURE AND STRUCTURES OF DIFFERENT HEAT-TREATMENT CENTERS IN N-TYPE AND P-TYPE SILICON
Authors: MEILWES N SPAETH JM EMTSEV VV OGANESYAN GA
Citation: N. Meilwes et al., ON THE NATURE AND STRUCTURES OF DIFFERENT HEAT-TREATMENT CENTERS IN N-TYPE AND P-TYPE SILICON, Semiconductor science and technology, 9(7), 1994, pp. 1346-1353
RADIATION-INDUCED DEFECTS IN CZOCHRALSKI-GROWN SILICON DOPED WITH GERMANIUM
Authors: SCHMALZ K EMTSEV VV
Citation: K. Schmalz et Vv. Emtsev, RADIATION-INDUCED DEFECTS IN CZOCHRALSKI-GROWN SILICON DOPED WITH GERMANIUM, Applied physics letters, 65(12), 1994, pp. 1575-1577
FORMATION OF DOUBLE THERMAL DONORS IN CZ-SI WITH DIFFERENT OXYGEN CONCENTRATIONS
Authors: EMTSEV VV MASHOVETS TV OGANESYAN GA SCHMALZ K
Citation: Vv. Emtsev et al., FORMATION OF DOUBLE THERMAL DONORS IN CZ-SI WITH DIFFERENT OXYGEN CONCENTRATIONS, Semiconductors, 27(9), 1993, pp. 854-856
CRITICAL CONCENTRATION OF OXYGEN IN CZ-SI AND CLUSTERIZATION OF IMPURITY ATOMS DURING ANNEALING
Authors: EMTSEV VV OGANESYAN GA SCHMALZ K
Citation: Vv. Emtsev et al., CRITICAL CONCENTRATION OF OXYGEN IN CZ-SI AND CLUSTERIZATION OF IMPURITY ATOMS DURING ANNEALING, Semiconductors, 27(9), 1993, pp. 856-860
FORMATION OF NEW DONORS AS A RESULT OF HEAT-TREATMENT OF SILICON WITHDIFFERENT OXYGEN CONCENTRATIONS
Authors: ANDREEV BA GOLUBEV VG EMTSEV VV KROPOTOV GI OGANESYAN GA SCHMALZ K
Citation: Ba. Andreev et al., FORMATION OF NEW DONORS AS A RESULT OF HEAT-TREATMENT OF SILICON WITHDIFFERENT OXYGEN CONCENTRATIONS, Semiconductors, 27(4), 1993, pp. 315-323
ANNIHILATION OF FRENKEL PAIRS IN SEMICONDUCTORS
Authors: EMTSEV VV MASHOVETS TV MIKHNOVICH VV
Citation: Vv. Emtsev et al., ANNIHILATION OF FRENKEL PAIRS IN SEMICONDUCTORS, Semiconductors, 27(4), 1993, pp. 390-392
NEW DONORS IN ANNEALED SILICON WITH AN ISOELECTRONIC GERMANIUM IMPURITY
Authors: EMTSEV VV OGANESYAN GA SCHMALZ K
Citation: Vv. Emtsev et al., NEW DONORS IN ANNEALED SILICON WITH AN ISOELECTRONIC GERMANIUM IMPURITY, Semiconductors, 27(11-12), 1993, pp. 1111-1112
Risultati: 1-16 |