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Results: 1-25 | 26-29
Results: 1-25/29
Low energy electron-excited nano-luminescence spectroscopy of GaN surfacesand interfaces
Authors: Brillson, LJ Young, AP Jessen, GH Levin, TM Bradley, ST Goss, SH Bae, J Ponce, FA Murphy, MJ Schaff, WJ Eastman, LF
Citation: Lj. Brillson et al., Low energy electron-excited nano-luminescence spectroscopy of GaN surfacesand interfaces, APPL SURF S, 175, 2001, pp. 442-449
Polar optical phonon instability and intervalley transfer in III-V semiconductors
Authors: O'Leary, SK Foutz, BE Shur, MS Eastman, LF
Citation: Sk. O'Leary et al., Polar optical phonon instability and intervalley transfer in III-V semiconductors, SOL ST COMM, 118(2), 2001, pp. 79-83
Influence of AlGaN deep level defects on AlGaN/GaN 2-DEG carrier confinement
Authors: Bradley, ST Young, AP Brillson, LJ Murphy, MJ Schaff, WJ Eastman, LF
Citation: St. Bradley et al., Influence of AlGaN deep level defects on AlGaN/GaN 2-DEG carrier confinement, IEEE DEVICE, 48(3), 2001, pp. 412-415
Undoped AlGaN/GaN HEMTs for microwave power amplification
Authors: Eastman, LF Tilak, V Smart, J Green, BM Chumbes, EM Dimitrov, R Kim, H Ambacher, OS Weimann, N Prunty, T Murphy, M Schaff, WJ Shealy, JR
Citation: Lf. Eastman et al., Undoped AlGaN/GaN HEMTs for microwave power amplification, IEEE DEVICE, 48(3), 2001, pp. 479-485
Effect of an AlN buffer layer on the epitaxial growth of InN by molecular-beam epitaxy
Authors: Lu, H Schaff, WJ Hwang, J Wu, H Koley, G Eastman, LF
Citation: H. Lu et al., Effect of an AlN buffer layer on the epitaxial growth of InN by molecular-beam epitaxy, APPL PHYS L, 79(10), 2001, pp. 1489-1491
High performance chip to substrate interconnects utilizing embedded structure
Authors: Juhola, TA Kerzar, B Mokhtari, M Eastman, LF
Citation: Ta. Juhola et al., High performance chip to substrate interconnects utilizing embedded structure, IEEE T AD P, 23(1), 2000, pp. 27-35
Cascode connected AlGaN/GaN HEMT's on SiC substrates
Authors: Green, BM Chu, KK Smart, JA Tilak, V Kim, H Shealy, JR Eastman, LF
Citation: Bm. Green et al., Cascode connected AlGaN/GaN HEMT's on SiC substrates, IEEE MICR G, 10(8), 2000, pp. 316-318
High efficiency monolithic gallium nitride distributed amplifier
Authors: Green, BM Lee, S Chu, K Webb, KJ Eastman, LF
Citation: Bm. Green et al., High efficiency monolithic gallium nitride distributed amplifier, IEEE MICR G, 10(7), 2000, pp. 270-272
The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMT's
Authors: Green, BM Chu, KK Chumbes, EM Smart, JA Shealy, JR Eastman, LF
Citation: Bm. Green et al., The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMT's, IEEE ELEC D, 21(6), 2000, pp. 268-270
The polarization-induced electron gas in a heterostructure
Authors: Ridley, BK Ambacher, O Eastman, LF
Citation: Bk. Ridley et al., The polarization-induced electron gas in a heterostructure, SEMIC SCI T, 15(3), 2000, pp. 270-271
Mobility of electrons in bulk GaN and AlxGa1-xN/GaN heterostructures
Authors: Ridley, BK Foutz, BE Eastman, LF
Citation: Bk. Ridley et al., Mobility of electrons in bulk GaN and AlxGa1-xN/GaN heterostructures, PHYS REV B, 61(24), 2000, pp. 16862-16869
Influence of oxygen and methane plasma on the electrical properties of undoped AlGaN/GaN heterostructures for high power transistors
Authors: Dimitrov, R Tilak, V Yeo, W Green, B Kim, H Smart, J Chumbes, E Shealy, JR Schaff, W Eastman, LF Miskys, C Ambacher, O Stutzmann, M
Citation: R. Dimitrov et al., Influence of oxygen and methane plasma on the electrical properties of undoped AlGaN/GaN heterostructures for high power transistors, SOL ST ELEC, 44(8), 2000, pp. 1361-1365
GaN/SiC heterojunction bipolar transistors
Authors: Schaff, WJ Wu, H Praharaj, CJ Murphy, M Eustis, T Foutz, B Ambacher, O Eastman, LF
Citation: Wj. Schaff et al., GaN/SiC heterojunction bipolar transistors, SOL ST ELEC, 44(2), 2000, pp. 259-264
Two-dimensional electron gases in Ga-face and N-face AlGaN/GaN heterostructures grown by plasma-induced molecular beam epitaxy and metalorganic chemical vapor deposition on sapphire
Authors: Dimitrov, R Murphy, M Smart, J Schaff, W Shealy, JR Eastman, LF Ambacher, O Stutzmann, M
Citation: R. Dimitrov et al., Two-dimensional electron gases in Ga-face and N-face AlGaN/GaN heterostructures grown by plasma-induced molecular beam epitaxy and metalorganic chemical vapor deposition on sapphire, J APPL PHYS, 87(7), 2000, pp. 3375-3380
Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures
Authors: Ambacher, O Foutz, B Smart, J Shealy, JR Weimann, NG Chu, K Murphy, M Sierakowski, AJ Schaff, WJ Eastman, LF Dimitrov, R Mitchell, A Stutzmann, M
Citation: O. Ambacher et al., Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures, J APPL PHYS, 87(1), 2000, pp. 334-344
A study of L-band GaAlAs/GaAs HBTs for high-voltage RF-power
Authors: Johansson, T Soderstrom, J Eastman, LF Woodard, DW
Citation: T. Johansson et al., A study of L-band GaAlAs/GaAs HBTs for high-voltage RF-power, INT J ELECT, 87(4), 2000, pp. 497-510
Material properties of bulk InGaAs and InAlAs/InGaAs heterostructures grown on (111)B and (111)B misoriented by 1 degrees towards < 211 > InP substrates
Authors: Yeo, W Dimitrov, R Schaff, WJ Eastman, LF
Citation: W. Yeo et al., Material properties of bulk InGaAs and InAlAs/InGaAs heterostructures grown on (111)B and (111)B misoriented by 1 degrees towards < 211 > InP substrates, APPL PHYS L, 77(26), 2000, pp. 4292-4294
The effect of As-4 pressure on material qualities of AlGaAs/GaAs heterostructures grown on (111)B GaAs substrates
Authors: Yeo, W Dimitrov, R Schaff, WJ Eastman, LF
Citation: W. Yeo et al., The effect of As-4 pressure on material qualities of AlGaAs/GaAs heterostructures grown on (111)B GaAs substrates, APPL PHYS L, 77(17), 2000, pp. 2764-2766
Improvement on epitaxial grown of InN by migration enhanced epitaxy
Authors: Lu, H Schaff, WJ Hwang, J Wu, H Yeo, W Pharkya, A Eastman, LF
Citation: H. Lu et al., Improvement on epitaxial grown of InN by migration enhanced epitaxy, APPL PHYS L, 77(16), 2000, pp. 2548-2550
Low-frequency noise and mobility fluctuations in AlGaN/GaN heterostructurefield-effect transistors
Authors: Garrido, JA Foutz, BE Smart, JA Shealy, JR Murphy, MJ Schaff, WJ Eastman, LF Munoz, E
Citation: Ja. Garrido et al., Low-frequency noise and mobility fluctuations in AlGaN/GaN heterostructurefield-effect transistors, APPL PHYS L, 76(23), 2000, pp. 3442-3444
Molecular beam epitaxial growth of normal and inverted two-dimensional electron gases in AlGaN GaN based heterostructures
Authors: Murphy, MJ Chu, K Wu, H Yeo, W Schaff, WJ Ambacher, O Smart, J Shealy, JR Eastman, LF Eustis, TJ
Citation: Mj. Murphy et al., Molecular beam epitaxial growth of normal and inverted two-dimensional electron gases in AlGaN GaN based heterostructures, J VAC SCI B, 17(3), 1999, pp. 1252-1254
Role of spontaneous and piezoelectric polarization induced effects in group-III nitride based heterostructures and devices
Authors: Ambacher, O Dimitrov, R Stutzmann, M Foutz, BE Murphy, MJ Smart, JA Shealy, JR Weimann, NG Chu, K Chumbes, M Green, B Sierakowski, AJ Schaff, WJ Eastman, LF
Citation: O. Ambacher et al., Role of spontaneous and piezoelectric polarization induced effects in group-III nitride based heterostructures and devices, PHYS ST S-B, 216(1), 1999, pp. 381-389
Polarization induced charge at heterojunctions of the III-V nitrides and their alloys
Authors: Foutz, BE Ambacher, O Murphy, MJ Tilak, V Eastman, LF
Citation: Be. Foutz et al., Polarization induced charge at heterojunctions of the III-V nitrides and their alloys, PHYS ST S-B, 216(1), 1999, pp. 415-418
Results, potential and challenges of high power GaN-based transistors
Authors: Eastman, LF
Citation: Lf. Eastman, Results, potential and challenges of high power GaN-based transistors, PHYS ST S-A, 176(1), 1999, pp. 175-178
Analysis of Schottky gate electron tunneling in polarization induced AlGaN/GaN high electron mobility transistors
Authors: Sierakowski, AJ Eastman, LF
Citation: Aj. Sierakowski et Lf. Eastman, Analysis of Schottky gate electron tunneling in polarization induced AlGaN/GaN high electron mobility transistors, J APPL PHYS, 86(6), 1999, pp. 3398-3401
Risultati: 1-25 | 26-29