AAAAAA
Results: 51-75/116
Authors:
Kukushkin, IV
Smet, JH
von Klitzing, K
Eberl, K
Citation: Iv. Kukushkin et al., Optical investigation of spin-wave excitations in fractional quantum Hall states and of interaction between composite fermions, PHYS REV L, 85(17), 2000, pp. 3688-3691
Authors:
Schmid, J
Weis, J
Eberl, K
Von Klitzing, K
Citation: J. Schmid et al., Absence of odd-even parity behavior for Kondo resonances in quantum dots, PHYS REV L, 84(25), 2000, pp. 5824-5827
Authors:
Danckwerts, M
Goni, AR
Thomsen, C
Eberl, K
Rojo, AG
Citation: M. Danckwerts et al., Enhanced vortex damping by eddy currents in superconductor-semiconductor hybrids, PHYS REV L, 84(16), 2000, pp. 3702-3705
Authors:
Sata, N
Eberman, K
Eberl, K
Maier, J
Citation: N. Sata et al., Mesoscopic fast ion conduction in nanometre-scale planar heterostructures, NATURE, 408(6815), 2000, pp. 946-949
Authors:
Snoke, DW
Negoita, V
Eberl, K
Citation: Dw. Snoke et al., Energy shifts of indirect excitons in coupled quantum wells, J LUMINESC, 87-9, 2000, pp. 157-161
Authors:
Schweinbock, T
Weiss, D
Lipinski, M
Eberl, K
Citation: T. Schweinbock et al., Scanning Hall probe microscopy with shear force distance control, J APPL PHYS, 87(9), 2000, pp. 6496-6498
Authors:
Volkov, OV
Kukushkin, IV
Lebedev, MV
Lesovik, GB
von Klitzing, K
Eberl, K
Citation: Ov. Volkov et al., Anomalous fluctuations of 2D-electron recombination radiation intensity inthe quantum Hall regime, JETP LETTER, 71(9), 2000, pp. 383-386
Authors:
Volkov, OV
Kukushkin, IV
Kulakovskii, DV
von Klitzing, K
Eberl, K
Citation: Ov. Volkov et al., Bistable charge states in a photoexcited quasi-two-dimensional electron-hole system, JETP LETTER, 71(8), 2000, pp. 322-326
Authors:
Schmidt, OG
Denker, U
Eberl, K
Kienzle, O
Ernst, F
Haug, RJ
Citation: Og. Schmidt et al., Resonant tunneling diodes made up of stacked self-assembled Ge/Si islands, APPL PHYS L, 77(26), 2000, pp. 4341-4343
Authors:
Schmidt, OG
Jin-Phillipp, NY
Lange, C
Denker, U
Eberl, K
Schreiner, R
Grabeldinger, H
Schweizer, H
Citation: Og. Schmidt et al., Long-range ordered lines of self-assembled Ge islands on a flat Si (001) surface, APPL PHYS L, 77(25), 2000, pp. 4139-4141
Authors:
Stangl, J
Roch, T
Bauer, G
Kegel, I
Metzger, TH
Schmidt, OG
Eberl, K
Kienzle, O
Ernst, F
Citation: J. Stangl et al., Vertical correlation of SiGe islands in SiGe/Si superlattices: X-ray diffraction versus transmission electron microscopy, APPL PHYS L, 77(24), 2000, pp. 3953-3955
Authors:
Schmidt, OG
Denker, U
Eberl, K
Kienzle, O
Ernst, F
Citation: Og. Schmidt et al., Effect of overgrowth temperature on the photoluminescence of Ge/Si islands, APPL PHYS L, 77(16), 2000, pp. 2509-2511
Authors:
Lipinski, MO
Schuler, H
Schmidt, OG
Eberl, K
Jin-Phillipp, NY
Citation: Mo. Lipinski et al., Strain-induced material intermixing of InAs quantum dots in GaAs, APPL PHYS L, 77(12), 2000, pp. 1789-1791
Epitaxially grown Si/SiGe interband tunneling diodes with high room-temperature peak-to-valley ratio
Authors:
Duschl, R
Schmidt, OG
Eberl, K
Citation: R. Duschl et al., Epitaxially grown Si/SiGe interband tunneling diodes with high room-temperature peak-to-valley ratio, APPL PHYS L, 76(7), 2000, pp. 879-881
Authors:
Keyser, UF
Schumacher, HW
Zeitler, U
Haug, RJ
Eberl, K
Citation: Uf. Keyser et al., Fabrication of a single-electron transistor by current-controlled local oxidation of a two-dimensional electron system, APPL PHYS L, 76(4), 2000, pp. 457-459
Authors:
Manz, YM
Schmidt, OG
Eberl, K
Citation: Ym. Manz et al., Room-temperature lasing via ground state of current-injected vertically aligned InP/GaInP quantum dots, APPL PHYS L, 76(23), 2000, pp. 3343-3345
Authors:
Riedl, T
Fehrenbacher, E
Zundel, MK
Eberl, K
Hangleiter, A
Citation: T. Riedl et al., Red light emitting injection lasers with vertically-aligned InP/GaInP quantum dots, JPN J A P 1, 38(1B), 1999, pp. 597-600
Authors:
Sapega, VF
Perel', VI
Mirlin, DN
Akimov, IA
Ruf, T
Cardona, M
Winter, W
Eberl, K
Citation: Vf. Sapega et al., Dimensionality effects in the hot-electron photoluminescence of gallium arsenide: 2D-quasi-3D transition, SEMICONDUCT, 33(6), 1999, pp. 681-683
Authors:
Butov, LV
Mintsev, AV
Filin, AI
Eberl, K
Citation: Lv. Butov et al., Kinetics of indirect photoluminescence in GaAs/AlxGa1-xAs double quantum wells in a random potential with a large amplitude, J EXP TH PH, 88(5), 1999, pp. 1036-1044
Authors:
Nachtwei, G
Kaya, II
Sagol, BE
von Klitzing, K
Eberl, K
Citation: G. Nachtwei et al., Spatially resolved measurements of hot-electron generation and relaxation at the breakdown of the quantum Hall effect, PHYSICA B, 272(1-4), 1999, pp. 127-129
Authors:
Sirenko, AA
Etchegoin, P
Fainstein, A
Eberl, K
Cardona, M
Citation: Aa. Sirenko et al., Linear birefringence in GaAs/AlAs multiple quantum wells, PHYS ST S-B, 215(1), 1999, pp. 241-246
Authors:
Schmidt, OG
Lange, C
Eberl, K
Citation: Og. Schmidt et al., Photoluminescence study of the 2D-3D growth mode changeover for different Ge/Si island phases, PHYS ST S-B, 215(1), 1999, pp. 319-324
Authors:
Goni, AR
Danckwerts, M
Haboeck, U
Eberl, K
Thomsen, C
Citation: Ar. Goni et al., Inelastic light scattering by elementary excitations of the 2D electron gas at high densities, PHYS ST S-B, 215(1), 1999, pp. 347-351
Authors:
Sapega, VF
Perel, VI
Mirlin, DN
Ruf, T
Cardona, M
Winter, W
Eberl, K
Citation: Vf. Sapega et al., Spectroscopy of hot electron photoluminescence in GaAs/AlAs superlattices, PHYS ST S-B, 215(1), 1999, pp. 379-386
Authors:
Kaya, II
Nachtwei, G
von Klitzing, K
Eberl, K
Citation: Ii. Kaya et al., Spatially resolved monitoring of the evolution of the breakdown of the quantum Hall effect: Direct observation of inter-Landau-level tunneling, EUROPH LETT, 46(1), 1999, pp. 62-67