Authors:
Guo, SL
Li, L
Shen, QB
Shi, YQ
Brandt, R
Vater, P
Wan, JS
Ensinger, W
Kulakov, BA
Krivopustov, MI
Sosnin, AN
Bradnova, V
Citation: Sl. Guo et al., Measurements of neutron yields and spatial distributions in U/Pb, Pb and Hg thick targets bombarded by 0.5 and 1.0 GeV protons, RADIAT MEAS, 34(1-6), 2001, pp. 301-304
Citation: K. Volz et al., Studies on treatment homogeneity of plasma immersion ion implantation by an optical method, SURF COAT, 136(1-3), 2001, pp. 80-84
Citation: K. Volz et al., Silicon carbide and amorphous carbon film formation by plasma immersion ion implantation: a comparison of methane and toluene as plasma forming gases, SURF COAT, 136(1-3), 2001, pp. 197-201
Citation: W. Ensinger et al., Inner wall coating of cylinders by plasma immersion ion implantation for corrosion protection, SURF COAT, 136(1-3), 2001, pp. 202-206
Authors:
Sudowe, R
Vater, P
Brandt, R
Vetter, J
Ensinger, W
Citation: R. Sudowe et al., Filters with < 100 nm radius pores for gas separation formed by high-energy ion irradiation of polymers, NUCL INST B, 175, 2001, pp. 564-568
Citation: K. Volz et al., Heteroepitaxial SiC films grown in Si by CH4 plasma immersion ion implantation: Conditions and mechanisms of their formation, NUCL INST B, 175, 2001, pp. 569-574
Citation: O. Lensch et al., Pitting corrosion of aluminium coated with amorphous carbon films by argonion beam assisted deposition at low process temperature, NUCL INST B, 175, 2001, pp. 575-579
Authors:
Galonska, M
Gabor, C
Thomae, RW
Klein, H
Volz, K
Ensinger, W
Citation: M. Galonska et al., Determination of ion incidence angles in plasma immersion ion implantationby means of a hollow multi-aperture target, NUCL INST B, 175, 2001, pp. 658-662
Authors:
Lensch, O
Enders, B
Knecht, J
Ensinger, W
Citation: O. Lensch et al., Examination of the metastable and stable pitting corrosion of aluminum modified with carbon by ion beam techniques, NUCL INST B, 175, 2001, pp. 683-687
Authors:
Volz, K
Schreiber, S
Gerlach, JW
Reiber, W
Rauschenbach, B
Stritzker, B
Assmann, W
Ensinger, W
Citation: K. Volz et al., Heteroepitaxial growth of 3C-SiC on (100) silicon by C-60 and Si molecularbeam epitaxy, MAT SCI E A, 289(1-2), 2000, pp. 255-264
Citation: M. Rinner et al., Formation of titanium oxide films on titanium and Ti6A14V by O-2-plasma immersion ion implantation, SURF COAT, 132(2-3), 2000, pp. 111-116
Citation: W. Ensinger et al., Plasma immersion ion implantation of complex-shaped objects: an experimental study on the treatment homogeneity, SURF COAT, 128, 2000, pp. 265-269
Citation: W. Ensinger et K. Volz, Ion-beam assisted coating of tube inner walls by plasma immersion ion implantation, SURF COAT, 128, 2000, pp. 270-273
Citation: K. Volz et al., C-SiC-Si gradient films formed on silicon by ion beam assisted deposition at room temperature, SURF COAT, 128, 2000, pp. 274-279
Citation: K. Volz et al., Tantalum nitride films formed by ion beam assisted deposition: analysis ofthe structure in dependence on the ion irradiation intensity, SURF COAT, 128, 2000, pp. 298-302
Citation: K. Volz et al., Nitrogen plasma immersion ion implantation and silicon sputter deposition combined with methane implantation as an in-line process for improving corrosion and wear performance of stainless steels, SURF COAT, 128, 2000, pp. 479-483
Authors:
Volz, K
Rauschenbach, B
Klatt, C
Ensinger, W
Citation: K. Volz et al., Ammonia plasma immersion ion implantation into silicon: Composition and structure of the resulting silicon-nitrogen-hydrogen system, NUCL INST B, 166, 2000, pp. 75-81
Citation: W. Ensinger et K. Volz, Thin film oxides as probe for homogeneity measurements of 3-dimensional objects treated by plasma immersion ion implantation, NUCL INST B, 166, 2000, pp. 154-158
Citation: W. Ensinger, Research and development in plasma-based ion implantation in Europe. I. Apparatus and projects, J VAC SCI B, 17(2), 1999, pp. 799-807
Authors:
Volz, K
Schreiber, S
Zeitler, M
Rauschenbach, B
Stritzker, B
Ensinger, W
Citation: K. Volz et al., Structural investigations of silicon carbide films formed by fullerene carbonization of silicon, SURF COAT, 122(2-3), 1999, pp. 101-107
Citation: W. Ensinger et al., An apparatus for in-situ or sequential plasma immersion ion beam treatmentin combination with r.f. sputter deposition or triode d.c. sputter deposition, SURF COAT, 121, 1999, pp. 343-346
Citation: W. Ensinger et al., Three-dimensional dose uniformity of plasma immersion ion implantation shown with the example of macro-trenches, SURF COAT, 121, 1999, pp. 347-352