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Results: 1-25/36
Authors:
PAK K
FAHY MR
ZHANG XM
JOYCE BA
Citation: K. Pak et al., THE SUBSTRATE ORIENTATION DEPENDENCE OF IN ATOM INCORPORATION DURING THE GROWTH OF (IN,GA)AS ON GAAS BY MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 186(1-2), 1998, pp. 21-26
Authors:
YAMAGUCHI H
BELK JG
ZHANG XM
SUDIJONO JL
FAHY MR
JONES TS
JOYCE BA
Citation: H. Yamaguchi et al., PRECISE CONTROL OF 2-DIMENSIONAL GROWTH OF INAS ON GAAS (111)A SURFACES STUDIED BY SCANNING-TUNNELING-MICROSCOPY, Applied surface science, 112, 1997, pp. 138-141
Authors:
YAMAGUCHI H
BELK JG
ZHANG XM
SUDIJONO JL
FAHY MR
JONES TS
PASHLEY DW
Citation: H. Yamaguchi et al., ATOMIC-SCALE IMAGING OF STRAIN RELAXATION VIA MISFIT DISLOCATIONS IN HIGHLY MISMATCHED SEMICONDUCTOR HETEROEPITAXY - INAS GAAS(111)A/, Physical review. B, Condensed matter, 55(3), 1997, pp. 1337-1340
Authors:
FAHY MR
ZHANG XM
TOK ES
NEAVE JH
VACCARO P
FUJITA K
TAKAHASHI M
WATANABE T
SATO K
JOYCE BA
Citation: Mr. Fahy et al., MBE GROWTH OF LATTICE-MATCHED AND MISMATCHED FILMS ON NON-(001) GAAS SUBSTRATES, Thin solid films, 306(2), 1997, pp. 192-197
Authors:
YAMAGUCHI H
BELK JG
ZHANG XM
SUDIJONO JL
FAHY MR
JONES TS
JOYCE BA
Citation: H. Yamaguchi et al., RHEED AND STM STUDY OF THE 2-DIMENSIONAL GROWTH OF INAS ON GAAS(111)A, Microelectronics, 28(8-10), 1997, pp. 825-831
Authors:
TOK ES
NEAVE JH
FAHY MR
ALLEGRETTI FE
ZHANG J
JONES TS
JOYCE BA
Citation: Es. Tok et al., INFLUENCE OF ARSENIC INCORPORATION ON SURFACE-MORPHOLOGY AND SI DOPING IN GAAS(110) HOMOEPITAXY, Microelectronics, 28(8-10), 1997, pp. 833-839
Authors:
FUJIMOTO H
DANN AJ
FAHY MR
LEQUESNE JP
WILLIS MR
Citation: H. Fujimoto et al., INFRARED REFLECTION STUDY OF COFACIALLY STACKED PHTHALOCYANINES DOPEDWITH IODINE, Journal of materials chemistry, 6(8), 1996, pp. 1361-1367
Authors:
JOYCE BA
NEAVE JH
FAHY MR
SATO K
HOLMES DM
BELK JG
SUDIJONO JL
JONES TS
Citation: Ba. Joyce et al., GROWTH DYNAMICS OF GAAS, ALAS AND (AL,GA)AS ON GAAS(110) AND GAAS(111)A SUBSTRATES DURING MOLECULAR-BEAM EPITAXY, Journal of materials science. Materials in electronics, 7(5), 1996, pp. 327-332
Authors:
NEWMAN RC
ASHWIN MJ
FAHY MR
HART L
HOLMES SN
ROBERTS C
ZHANG X
WAGNER J
Citation: Rc. Newman et al., LATTICE LOCATIONS OF SILICON ATOMS IN DELTA-DOPED LAYERS IN GAAS AT HIGH DOPING CONCENTRATIONS, Physical review. B, Condensed matter, 54(12), 1996, pp. 8769-8781
Authors:
SATO K
FAHY MR
ASHWIN MJ
JOYCE BA
Citation: K. Sato et al., SILICON INCORPORATION BEHAVIOR IN GAAS GROWN ON GAAS (111)A BY MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 165(4), 1996, pp. 345-350
Authors:
DION M
WASILEWSKI ZR
CHATENOUD F
GUPTA VK
PRATT AR
WILLIAMS RL
NORMAN CE
FAHY MR
MARINOPOULOU A
Citation: M. Dion et al., EXTREMELY LOW-THRESHOLD CURRENT-DENSITY INGAAS GAAS/ALGAAS STRAINED SQW LASER GROWN BY MBE WITH AS-2/, Canadian journal of physics, 74, 1996, pp. 1-4
Authors:
YAMAGUCHI H
FAHY MR
JOYCE BA
Citation: H. Yamaguchi et al., INHIBITIONS OF 3-DIMENSIONAL ISLAND FORMATION IN INAS FILMS GROWN ON GAAS(111)A SURFACE BY MOLECULAR-BEAM EPITAXY, Applied physics letters, 69(6), 1996, pp. 776-778
Authors:
JOYCE BA
SHITARA T
FAHY MR
SATO K
NEAVE JH
FAWCETT PN
KAMIYA I
ZHANG XM
Citation: Ba. Joyce et al., MECHANISMS OF LAYER GROWTH DURING MOLECULAR-BEAM EPITAXY OF SEMICONDUCTOR-FILMS, Materials science & engineering. B, Solid-state materials for advanced technology, 30(2-3), 1995, pp. 87-97
Authors:
HU SJ
FAHY MR
SATO K
JOYCE BA
Citation: Sj. Hu et al., INCORPORATION OF SN ON GAAS (111)A SUBSTRATES BY MOLECULAR-BEAM EPITAXY, Journal of electronic materials, 24(8), 1995, pp. 1003-1006
Authors:
HART L
ASHWIN MJ
FEWSTER PF
ZHANG X
FAHY MR
NEWMAN RC
Citation: L. Hart et al., SI DELTA-DOPING IN GAAS - INVESTIGATION OF THE DEGREE OF CONFINEMENT AND THE EFFECTS OF POSTGROWTH ANNEALING, Semiconductor science and technology, 10(1), 1995, pp. 32-40
Authors:
SHARMA VKM
MCPHAIL DS
FAHY MR
Citation: Vkm. Sharma et al., ION YIELD EFFECTS IN THE SIMS ANALYSIS OF SILICON DELTA-DOPED LAYERS IN GAAS, Surface and interface analysis, 23(10), 1995, pp. 723-728
Authors:
HART L
FEWSTER PF
ASHWIN MJ
FAHY MR
NEWMAN RC
Citation: L. Hart et al., MEASUREMENT OF INTERFACE ROUGHNESS IN A SUPERLATTICE OF DELTA-BARRIERS OF AL IN GAAS USING HIGH-RESOLUTION X-RAY-DIFFRACTOMETRY, Journal of physics. D, Applied physics, 28(4A), 1995, pp. 154-158
Authors:
SATO K
FAHY MR
KAMIYA I
NEAVE JH
JOYCE BA
Citation: K. Sato et al., REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATIONS DURING GROWTH OF (AL,CA)AS ON GAAS(111)A, Journal of crystal growth, 150(1-4), 1995, pp. 77-80
Authors:
AVERY AR
HOLMES DM
SUDIJONO JL
JONES TS
FAHY MR
JOYCE BA
Citation: Ar. Avery et al., A SCANNING-TUNNELING-MICROSCOPY STUDY OF THE DEPOSITION OF SI ON GAAS(001) IMPLICATIONS FOR SI DELTA-DOPING, Journal of crystal growth, 150(1-4), 1995, pp. 202-208
Authors:
HU SJ
FAHY MR
SATO K
JOYCE BA
Citation: Sj. Hu et al., TIN AS AN N-TYPE DOPANT IN THE MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS(111)A, Journal of crystal growth, 150(1-4), 1995, pp. 227-230
Authors:
SATO K
FAHY MR
JOYCE BA
Citation: K. Sato et al., THE GROWTH OF HIGH-QUALITY GAAS ON GAAS (111)A, JPN J A P 2, 33(7A), 1994, pp. 120000905-120000907
Authors:
HORIKOSHI Y
FAHY MR
KAWASHIMA M
FURUKAWA K
FUJINO M
MATSUMOTO N
Citation: Y. Horikoshi et al., A NEW SI DOPING SOURCE FOR GAAS GROWTH BY MOLECULAR-BEAM EPITAXY, JPN J A P 2, 33(3B), 1994, pp. 120000413-120000416
Authors:
NORMAN CE
FAHY MR
MARINOPOULOU A
WILLIAMS RL
PRATT AR
CHATENOUD F
Citation: Ce. Norman et al., SELECTIVE-AREA BANDGAP MODIFICATION DURING MBE GROWTH OF INGAAS GAAS QUANTUM-WELLS FOR MODE-LOCKED LASER APPLICATIONS/, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 299-301
Authors:
JOYCE BA
ZHANG XM
NEAVE JH
FAWCETT PN
FAHY MR
SATO K
KAMIYA I
Citation: Ba. Joyce et al., REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION (RHEED) INTENSITY OSCILLATIONS - GROWTH MODES AND GROWTH-RATES - A CRITIQUE, Scanning microscopy, 8(4), 1994, pp. 913-924
Authors:
FAHY MR
SATO K
JOYCE BA
Citation: Mr. Fahy et al., SILICON DOPING WITH MODULATED BEAM EPITAXY IN THE GROWTH OF GAAS(111)A, Applied surface science, 82-3, 1994, pp. 14-17