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KOCHERESHKO VP
YAKOVLEV DR
ZEHNDER U
OSSAU W
FASCHINGER W
LANDWEHR G
Citation: Av. Platonov et al., OPTICAL STUDIES OF ZNSE ZNMGSSE-BASED QUANTUM-WELL SEMICONDUCTOR HETEROSTRUCTURES/, Physics of the solid state, 40(5), 1998, pp. 745-746
Authors:
HAASE B
NEUKIRCH U
GUTOWSKI J
BARTELS G
STAHL A
NURNBERGER J
FASCHINGER W
Citation: B. Haase et al., COHERENT DYNAMICS OF EXCITONS AND BIEXCITONS - POLARIZATION AND INTENSITY DEPENDENCE, Physica status solidi. b, Basic research, 206(1), 1998, pp. 363-368
Citation: T. Gerhard et al., DEPTH-SENSITIVE X-RAY-DIFFRACTION USING EXTREMELY ASYMMETRICAL REFLECTIONS BY VARIATION OF THE WAVELENGTH, Semiconductor science and technology, 13(6), 1998, pp. 583-589
Authors:
KORN M
GERHARD T
RESS HR
ALBERT D
GERHARD A
SCHUMACHER C
FASCHINGER W
Citation: M. Korn et al., STRUCTURAL-PROPERTIES OF ZNTE ZN(S,TE)-SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY ON (001)GAAS-SUBSTRATES/, Journal of crystal growth, 185, 1998, pp. 62-65
Authors:
STANGL J
DARHUBER AA
HOLY V
DENAUROIS M
FERREIRA S
FASCHINGER W
BAUER G
Citation: J. Stangl et al., HIGH-RESOLUTION X-RAY-DIFFRACTION AND X-RAY REFLECTIVITY STUDIES OF SHORT-PERIOD CDTE MNTE-SUPERLATTICES/, Journal of crystal growth, 185, 1998, pp. 105-108
Authors:
NIQUET YM
GOURGON C
DANG LS
MARIETTE H
PRIESTER C
VIEU C
STRAUB H
BRUNTHALER G
DARHUBER A
GRILL T
FASCHINGER W
BAUER G
Citation: Ym. Niquet et al., INFLUENCE OF INHOMOGENEOUS STRAIN RELAXATION ON THE PHOTOLUMINESCENCEOF II-VI NANOSTRUCTURES, Journal of crystal growth, 185, 1998, pp. 334-338
Authors:
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SPAHN W
NURNBERGER J
SCHULL K
KORN M
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EHINGER M
FASCHINGER W
LANDWEHR G
Citation: D. Albert et al., OPTICAL-PROPERTIES AND DEFECT CHARACTERIZATION OF ZNSE LASER-DIODES GROWN ON TELLURIUM-TERMINATED GAAS, Journal of crystal growth, 185, 1998, pp. 571-574
Authors:
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PASCHER H
FASCHINGER W
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BAUER G
Citation: R. Rupprecht et al., RESONANT COHERENT RAMAN-SPECTROSCOPY ON SHORT-PERIOD CDTE MNTE SUPERLATTICES/, Journal of crystal growth, 185, 1998, pp. 952-956
Authors:
KINNE A
THOMS M
RESS HR
GERHARD T
EHINGER M
FASCHINGER W
LANDWEHR G
Citation: A. Kinne et al., IMAGE PLATES AS ONE-DIMENSIONAL DETECTORS IN HIGH-RESOLUTION X-RAY-DIFFRACTION, Journal of applied crystallography, 31, 1998, pp. 446-452
Authors:
LUNZ U
KEIM M
WAAG A
FASCHINGER W
LANDWEHR G
Citation: U. Lunz et al., TRANSVERSE MAGNETIC-FIELD STUDIES IN ZNSE BETE RESONANT-TUNNELING STRUCTURES/, Applied physics letters, 72(17), 1998, pp. 2120-2122
Authors:
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FASCHINGER W
BAUER G
Citation: J. Stangl et al., RECIPROCAL SPACE MAPPING ON SI1-XCX EPILAYERS AND SI-N C/SI-N SUPERLATTICES/, Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics, 19(2-4), 1997, pp. 355-360
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FASCHINGER W
SPAHN W
NURNBERGER J
GERHARD A
KORN M
SCHULL K
ALBERT D
RESS H
EBEL R
SCHMITT R
OLSZOWI B
EHINGER M
LANDWEHR G
Citation: W. Faschinger et al., APPLICATION OF WIDE-GAP II-VI COMPOUNDS AS EMITTERS AND DETECTORS, Physica status solidi. b, Basic research, 202(2), 1997, pp. 695-706
Authors:
LUNZ U
SCHUMACHER C
NURNBERGER J
SCHULL K
GERHARD A
SCHUSSLER U
JOBST B
FASCHINGER W
LANDWEHR G
Citation: U. Lunz et al., THE ENERGY-GAP E-G OF ZN1-XMGXSYSE1-Y EPITAXIAL LAYERS AS A FUNCTION OF COMPOSITION AND TEMPERATURE, Semiconductor science and technology, 12(8), 1997, pp. 970-973
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NURNBERGER J
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SCHMITT R
KORN M
SCHULL K
EHINGER M
Citation: W. Faschinger et al., PROCESSES OCCURRING DURING THE FORMATION OF GRADED ZNSE ZNTE CONTACTSON P-ZNSE/, Semiconductor science and technology, 12(10), 1997, pp. 1291-1297
Authors:
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MOLLER MO
RESS HR
FASCHINGER W
LANDWEHR G
Citation: M. Li et al., THE INTERPRETATION OF X-RAY ROCKING CURVES BY THE FOURIER-TRANSFORM METHOD, Journal of physics. D, Applied physics, 30(24), 1997, pp. 3296-3300
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LI M
GALL R
BECKER CR
GERHARD T
FASCHINGER W
LANDWEHR G
Citation: M. Li et al., STRAINS IN HGTE HG0.1CD0.9TE SUPERLATTICES GROWN ON (211)B CD0.96ZN0.04TE SUBSTRATES/, Journal of applied physics, 82(10), 1997, pp. 4860-4864