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Results: 1-12 |
Results: 12
HIGH-FREQUENCY PERFORMANCES OF A PARTIALLY DEPLETED 0.18-MU-M SOI CMOS TECHNOLOGY AT LOW SUPPLY VOLTAGE - INFLUENCE OF PARASITIC ELEMENTS/
Authors: FERLETCAVROIS V MARCANDELLA C MUSSEAU O LERAY JL PELLOIE JL MARTIN F KOLEV S PASQUET D
Citation: V. Ferletcavrois et al., HIGH-FREQUENCY PERFORMANCES OF A PARTIALLY DEPLETED 0.18-MU-M SOI CMOS TECHNOLOGY AT LOW SUPPLY VOLTAGE - INFLUENCE OF PARASITIC ELEMENTS/, IEEE electron device letters, 19(7), 1998, pp. 265-267
A METHODOLOGY TO STUDY LATERAL PARASITIC TRANSISTORS IN CMOS TECHNOLOGIES
Authors: FLAMENT O CHABRERIE C FERLETCAVROIS V LERAY JL FACCIO F JARRON P
Citation: O. Flament et al., A METHODOLOGY TO STUDY LATERAL PARASITIC TRANSISTORS IN CMOS TECHNOLOGIES, IEEE transactions on nuclear science, 45(3), 1998, pp. 1385-1389
ANALYSIS OF SINGLE EVENT EFFECTS AT GRAZING ANGLE
Authors: CAMPBELL AB MUSSEAU O FERLETCAVROIS V STAPOR WJ MCDONALD PT
Citation: Ab. Campbell et al., ANALYSIS OF SINGLE EVENT EFFECTS AT GRAZING ANGLE, IEEE transactions on nuclear science, 45(3), 1998, pp. 1603-1611
RAPID ANNEALING MEASUREMENTS IN FULLY-DEPLETED NMOS SOI/
Authors: GRUBER O FERLETCAVROIS V PAILLET P MUSSEAU O RAYNAUD C PELLOIE JL
Citation: O. Gruber et al., RAPID ANNEALING MEASUREMENTS IN FULLY-DEPLETED NMOS SOI/, Microelectronic engineering, 36(1-4), 1997, pp. 249-252
CHARGE COLLECTION IN SUBMICRON CMOS SOI TECHNOLOGY/
Authors: MUSSEAU O FERLETCAVROIS V CAMPBELL AB KNUDSON AR STAPOR WJ MCDONALD PT PELLOIE JL RAYNAUD C
Citation: O. Musseau et al., CHARGE COLLECTION IN SUBMICRON CMOS SOI TECHNOLOGY/, IEEE transactions on nuclear science, 44(6), 1997, pp. 2124-2133
COMPARISON OF SINGLE EVENT PHENOMENA FOR FRONT BACK IRRADIATIONS/
Authors: MUSSEAU O FERLETCAVROIS V CAMPBELL AB STAPOR WJ MCDONALD PT
Citation: O. Musseau et al., COMPARISON OF SINGLE EVENT PHENOMENA FOR FRONT BACK IRRADIATIONS/, IEEE transactions on nuclear science, 44(6), 1997, pp. 2250-2255
TOTAL-DOSE EFFECTS ON A FULLY-DEPLETED SOI NMOSFET AND ITS LATERAL PARASITIC TRANSISTOR
Authors: FERLETCAVROIS V MUSSEAU O LERAY JL PELLOIE JL RAYNAUD C
Citation: V. Ferletcavrois et al., TOTAL-DOSE EFFECTS ON A FULLY-DEPLETED SOI NMOSFET AND ITS LATERAL PARASITIC TRANSISTOR, I.E.E.E. transactions on electron devices, 44(6), 1997, pp. 965-971
SIMULATIONS OF HARDENED COMPONENTS AND CIRCUITS
Authors: DURBIN F FERLETCAVROIS V HAUSSY J BERTHIAU G SIARRY P
Citation: F. Durbin et al., SIMULATIONS OF HARDENED COMPONENTS AND CIRCUITS, International journal of electronics, 81(2), 1996, pp. 125-136
2-DIMENSIONAL SIMULATION OF TOTAL-DOSE EFFECTS ON NMOSFET WITH LATERAL PARASITIC TRANSISTOR
Authors: BRISSET C FERLETCAVROIS V FLAMENT O MUSSEAU O LERAY JL PELLOIE JL ESCOFFIER R MICHEZ A CIRBA C BORDURE G
Citation: C. Brisset et al., 2-DIMENSIONAL SIMULATION OF TOTAL-DOSE EFFECTS ON NMOSFET WITH LATERAL PARASITIC TRANSISTOR, IEEE transactions on nuclear science, 43(6), 1996, pp. 2651-2658
ANALYSIS OF LOCAL AND GLOBAL TRANSIENT EFFECTS IN A CMOS SRAM
Authors: GARDIC F MUSSEAU O FLAMENT O BRISSET C FERLETCAVROIS V MARTINEZ M CORBIERE T
Citation: F. Gardic et al., ANALYSIS OF LOCAL AND GLOBAL TRANSIENT EFFECTS IN A CMOS SRAM, IEEE transactions on nuclear science, 43(3), 1996, pp. 899-906
COMPARISON OF THE SENSITIVITY TO HEAVY-IONS OF SRAMS IN DIFFERENT SIMOX TECHNOLOGIES
Authors: FERLETCAVROIS V MUSSEAU O LERAY JL COIC YM LECARVAL G GUICHARD E
Citation: V. Ferletcavrois et al., COMPARISON OF THE SENSITIVITY TO HEAVY-IONS OF SRAMS IN DIFFERENT SIMOX TECHNOLOGIES, IEEE electron device letters, 15(3), 1994, pp. 82-84
SEU IN SOI SRAMS - A STATIC MODEL
Authors: MUSSEAU O LERAY JL FERLETCAVROIS V COIC YM GIFFARD B
Citation: O. Musseau et al., SEU IN SOI SRAMS - A STATIC MODEL, IEEE transactions on nuclear science, 41(3), 1994, pp. 607-612
Risultati: 1-12 |