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Results: 1-24 |
Results: 24
CHARACTERISTICS OF AMORPHOUS AND POLYCRYSTALLINE SILICON FILMS DEPOSITED AT 120 DEGREES-C BY ELECTRON-CYCLOTRON-RESONANCE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION
Authors: BAE SH KALKAN AK CHENG SC FONASH SJ
Citation: Sh. Bae et al., CHARACTERISTICS OF AMORPHOUS AND POLYCRYSTALLINE SILICON FILMS DEPOSITED AT 120 DEGREES-C BY ELECTRON-CYCLOTRON-RESONANCE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(3), 1998, pp. 1912-1916
CYCLIC CURRENT-VOLTAGE CHARACTERIZATION APPLIED TO EDGE DAMAGE EVALUATION IN GATE DEFINITION PLASMA-ETCHING
Authors: OKANDAN M FONASH SJ OZAITA M PREUNINGER F CHAN YD WERKING J
Citation: M. Okandan et al., CYCLIC CURRENT-VOLTAGE CHARACTERIZATION APPLIED TO EDGE DAMAGE EVALUATION IN GATE DEFINITION PLASMA-ETCHING, IEEE electron device letters, 18(10), 1997, pp. 495-498
METAL-INDUCED CRYSTALLIZATION OF A-SI THIN-FILMS BY NONVACUUM TREATMENTS
Authors: KALKAN AK FONASH SJ
Citation: Ak. Kalkan et Sj. Fonash, METAL-INDUCED CRYSTALLIZATION OF A-SI THIN-FILMS BY NONVACUUM TREATMENTS, Journal of the Electrochemical Society, 144(11), 1997, pp. 297-298
SOFT-BREAKDOWN DAMAGE IN MOSFETS DUE TO HIGH-DENSITY PLASMA-ETCHING EXPOSURE
Authors: OKANDAN M FONASH SJ AWADELKARIM OO CHAN YD PREUNINGER F
Citation: M. Okandan et al., SOFT-BREAKDOWN DAMAGE IN MOSFETS DUE TO HIGH-DENSITY PLASMA-ETCHING EXPOSURE, IEEE electron device letters, 17(8), 1996, pp. 388-390
IMPACT OF STRUCTURE ON PHOTOGATING
Authors: BAE SH FONASH SJ
Citation: Sh. Bae et Sj. Fonash, IMPACT OF STRUCTURE ON PHOTOGATING, Journal of applied physics, 79(5), 1996, pp. 2213-2220
DETECTION AND COMPARISON OF LOCALIZED STATES PRODUCED IN POLY-SI ULTRA-THIN OXIDE SILICON, STRUCTURES BY PLASMA EXPOSURE OR PLASMA CHARGINGDURING REACTIVE ION ETCHING
Authors: FONASH SJ OZAITA M AWADELKARIM OO
Citation: Sj. Fonash et al., DETECTION AND COMPARISON OF LOCALIZED STATES PRODUCED IN POLY-SI ULTRA-THIN OXIDE SILICON, STRUCTURES BY PLASMA EXPOSURE OR PLASMA CHARGINGDURING REACTIVE ION ETCHING, Journal of applied physics, 79(4), 1996, pp. 2091-2096
PLASMA-CHARGING DAMAGE TO GATE SIO2 AND SIO2 SI INTERFACES IN SUBMICRON N-CHANNEL TRANSISTORS - LATENT DEFECTS AND PASSIVATION/DEPASSIVATION OF DEFECTS BY HYDROGEN/
Authors: AWADELKARIM OO FONASH SJ MIKULAN PI CHAN YD
Citation: Oo. Awadelkarim et al., PLASMA-CHARGING DAMAGE TO GATE SIO2 AND SIO2 SI INTERFACES IN SUBMICRON N-CHANNEL TRANSISTORS - LATENT DEFECTS AND PASSIVATION/DEPASSIVATION OF DEFECTS BY HYDROGEN/, Journal of applied physics, 79(1), 1996, pp. 517-525
ON SEMICONDUCTOR SURFACE EVALUATION USING THE EFFECTIVE SURFACE RECOMBINATION SPEED FOR SCHOTTKY-COUPLED PHOTOVOLTAGE MEASUREMENTS
Authors: HOWLAND WH FONASH SJ
Citation: Wh. Howland et Sj. Fonash, ON SEMICONDUCTOR SURFACE EVALUATION USING THE EFFECTIVE SURFACE RECOMBINATION SPEED FOR SCHOTTKY-COUPLED PHOTOVOLTAGE MEASUREMENTS, Journal of the Electrochemical Society, 143(6), 1996, pp. 1958-1962
ELECTRICALLY REVERSIBLE DEPASSIVATION PASSIVATION MECHANISM IN POLYCRYSTALLINE SILICON/
Authors: SUNTHARALINGAM V FONASH SJ
Citation: V. Suntharalingam et Sj. Fonash, ELECTRICALLY REVERSIBLE DEPASSIVATION PASSIVATION MECHANISM IN POLYCRYSTALLINE SILICON/, Applied physics letters, 68(10), 1996, pp. 1400-1402
HYDROGEN AND PROCESSING DAMAGE IN CMOS DEVICE RELIABILITY - DEFECT PASSIVATION AND DEPASSIVATION DURING PLASMA EXPOSURES AND SUBSEQUENT ANNEALING
Authors: AWADELKARIM OO FONASH SJ MIKULAN PI OZAITA M CHAN YD
Citation: Oo. Awadelkarim et al., HYDROGEN AND PROCESSING DAMAGE IN CMOS DEVICE RELIABILITY - DEFECT PASSIVATION AND DEPASSIVATION DURING PLASMA EXPOSURES AND SUBSEQUENT ANNEALING, Microelectronic engineering, 28(1-4), 1995, pp. 47-50
ANNEALING OF REACTIVE ION ETCHING PLASMA-EXPOSED THIN OXIDES
Authors: GU T AWADELKARIM OO FONASH SJ REMBETSKI JF CHAN YD
Citation: T. Gu et al., ANNEALING OF REACTIVE ION ETCHING PLASMA-EXPOSED THIN OXIDES, Journal of the Electrochemical Society, 142(2), 1995, pp. 606-609
ERRORS AND ERROR-AVOIDANCE IN THE SCHOTTKY COUPLED SURFACE PHOTOVOLTAGE TECHNIQUE
Authors: HOWLAND WH FONASH SJ
Citation: Wh. Howland et Sj. Fonash, ERRORS AND ERROR-AVOIDANCE IN THE SCHOTTKY COUPLED SURFACE PHOTOVOLTAGE TECHNIQUE, Journal of the Electrochemical Society, 142(12), 1995, pp. 4262-4268
DAMAGE TO SI SUBSTRATES DURING SIO2 ETCHING - A COMPARISON OF REACTIVE ION ETCHING AND MAGNETRON-ENHANCED REACTIVE ION ETCHING
Authors: GU T DITIZIO RA FONASH SJ AWADELKARIM OO RUZYLLO J COLLINS RW LEARY HJ
Citation: T. Gu et al., DAMAGE TO SI SUBSTRATES DURING SIO2 ETCHING - A COMPARISON OF REACTIVE ION ETCHING AND MAGNETRON-ENHANCED REACTIVE ION ETCHING, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(2), 1994, pp. 567-573
HYDROGEN PERMEATION, SI DEFECT GENERATION, AND THEIR INTERACTION DURING CHF3 O-2 CONTACT ETCHING/
Authors: AWADELKARIM OO MIKULAN PI GU T DITIZIO RA FONASH SJ
Citation: Oo. Awadelkarim et al., HYDROGEN PERMEATION, SI DEFECT GENERATION, AND THEIR INTERACTION DURING CHF3 O-2 CONTACT ETCHING/, IEEE electron device letters, 15(3), 1994, pp. 85-87
IMPACT OF POLYSILICON DRY-ETCHING ON 0.5-MU-M NMOS TRANSISTOR PERFORMANCE - THE PRESENCE OF BOTH PLASMA BOMBARDMENT DAMAGE AND PLASMA CHARGING DAMAGE
Authors: GU T OKANDAN M AWADELKARIM OO FONASH SJ REMBETSKI JF AUM P CHAN YD
Citation: T. Gu et al., IMPACT OF POLYSILICON DRY-ETCHING ON 0.5-MU-M NMOS TRANSISTOR PERFORMANCE - THE PRESENCE OF BOTH PLASMA BOMBARDMENT DAMAGE AND PLASMA CHARGING DAMAGE, IEEE electron device letters, 15(2), 1994, pp. 48-50
HIGH-PERFORMANCE P-CHANNEL POLY-SI TFTS USING ELECTRON-CYCLOTRON-RESONANCE HYDROGEN PLASMA PASSIVATION
Authors: YIN AG FONASH SJ
Citation: Ag. Yin et Sj. Fonash, HIGH-PERFORMANCE P-CHANNEL POLY-SI TFTS USING ELECTRON-CYCLOTRON-RESONANCE HYDROGEN PLASMA PASSIVATION, IEEE electron device letters, 15(12), 1994, pp. 502-503
DEGRADATION OF SUBMICRON N-CHANNEL MOSFET HOT-ELECTRON RELIABILITY DUE TO EDGE DAMAGE FROM POLYSILICON GATE PLASMA-ETCHING
Authors: GU T AWADELKARIM OO FONASH SJ CHAN YD
Citation: T. Gu et al., DEGRADATION OF SUBMICRON N-CHANNEL MOSFET HOT-ELECTRON RELIABILITY DUE TO EDGE DAMAGE FROM POLYSILICON GATE PLASMA-ETCHING, IEEE electron device letters, 15(10), 1994, pp. 396-398
OXYGEN-PLASMA-ENHANCED CRYSTALLIZATION OF A-SI-H FILMS ON GLASS
Authors: YIN AG FONASH SJ
Citation: Ag. Yin et Sj. Fonash, OXYGEN-PLASMA-ENHANCED CRYSTALLIZATION OF A-SI-H FILMS ON GLASS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(4), 1994, pp. 1237-1240
PHOTODETECTION ENHANCEMENT IN 2-TERMINAL AMORPHOUS SILICON-BASED DEVICES - AN EXPERIMENTAL AND COMPUTER-SIMULATION STUDY
Authors: FONASH SJ HOU JY RUBINELLI FA BENNETT M WIEDEMAN S YANG LY NEWTON J
Citation: Sj. Fonash et al., PHOTODETECTION ENHANCEMENT IN 2-TERMINAL AMORPHOUS SILICON-BASED DEVICES - AN EXPERIMENTAL AND COMPUTER-SIMULATION STUDY, Optical engineering, 33(6), 1994, pp. 2065-2069
A SURVEY OF DAMAGE EFFECTS IN PLASMA-ETCHING
Authors: FONASH SJ VISWANATHAN CR CHAN YD
Citation: Sj. Fonash et al., A SURVEY OF DAMAGE EFFECTS IN PLASMA-ETCHING, Solid state technology, 37(7), 1994, pp. 99
EFFECT OF PLASMA-ETCHING EDGE-TYPE EXPOSURES ON SI SUBSTRATES - A CORRELATION BETWEEN CARRIER LIFETIME AND ETCH-INDUCED DEFECT STATES
Authors: GU T AWADELKARIM OO FONASH SJ REMBETSKI JF CHAN YD
Citation: T. Gu et al., EFFECT OF PLASMA-ETCHING EDGE-TYPE EXPOSURES ON SI SUBSTRATES - A CORRELATION BETWEEN CARRIER LIFETIME AND ETCH-INDUCED DEFECT STATES, Journal of the Electrochemical Society, 141(11), 1994, pp. 3230-3234
INFLUENCE OF HYDROGEN AND OXYGEN PLASMA TREATMENTS ON GRAIN-BOUNDARY DEFECTS IN POLYCRYSTALLINE SILICON
Authors: NICKEL NH YIN A FONASH SJ
Citation: Nh. Nickel et al., INFLUENCE OF HYDROGEN AND OXYGEN PLASMA TREATMENTS ON GRAIN-BOUNDARY DEFECTS IN POLYCRYSTALLINE SILICON, Applied physics letters, 65(24), 1994, pp. 3099-3101
A COMPARISON OF CL2 AND HBR CL2-BASED POLYSILICON ETCH CHEMISTRIES - IMPACT ON SIO2 AND SI SUBSTRATE DAMAGE/
Authors: REMBETSKI JF CHAN YD BODEN E GU T AWADELKARIM OO DITIZIO RA FONASH SJ LI XY VISWANATHAN CR
Citation: Jf. Rembetski et al., A COMPARISON OF CL2 AND HBR CL2-BASED POLYSILICON ETCH CHEMISTRIES - IMPACT ON SIO2 AND SI SUBSTRATE DAMAGE/, JPN J A P 1, 32(6B), 1993, pp. 3023-3028
POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS ON CORNING 7059 GLASS SUBSTRATES USING SHORT-TIME, LOW-TEMPERATURE PROCESSING
Authors: LIU G FONASH SJ
Citation: G. Liu et Sj. Fonash, POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS ON CORNING 7059 GLASS SUBSTRATES USING SHORT-TIME, LOW-TEMPERATURE PROCESSING, Applied physics letters, 62(20), 1993, pp. 2554-2556
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