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Results:
1-12
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Results: 12
Authors:
VILELA MF
FREUNDLICH A
MONIER C
NEWMAN F
AGUILAR L
Citation: Mf. Vilela et al., CHEMICAL BEAM EPITAXY FOR HIGH-EFFICIENCY INP SOLAR-CELLS, Journal of crystal growth, 188(1-4), 1998, pp. 311-316
Authors:
MONIER C
VILELA MF
SERDIUKOVA I
FREUNDLICH A
Citation: C. Monier et al., PHOTOCURRENT AND PHOTOLUMINESCENCE SPECTROSCOPY OF INASXP1-X INP STRAINED QUANTUM-WELLS GROWN BY CHEMICAL BEAM EPITAXY/, Journal of crystal growth, 188(1-4), 1998, pp. 332-337
Authors:
MONIER C
VILELA MF
SERDIUKOVA I
FREUNDLICH A
Citation: C. Monier et al., BAND DISCONTINUITY IN STRAINED IN(AS,P) INP HETEROSTRUCTURES/, Applied physics letters, 72(13), 1998, pp. 1587-1589
Authors:
GOLDREICH Y
FREUNDLICH A
ALPERT P
Citation: Y. Goldreich et al., RAINFALL ANOMALY OVER THE LEE SIDE OF MOUNT CARMEL (ISRAEL) AND THE ASSOCIATED WIND-FIELD, Journal of applied meteorology, 36(6), 1997, pp. 748-762
Authors:
BENSAOULA AH
FREUNDLICH A
Citation: Ah. Bensaoula et A. Freundlich, STRAIN BALANCED GAP GAAS/INP/GAAS SUPERLATTICES - STRUCTURAL AND ELECTRONIC-PROPERTIES/, Journal of crystal growth, 164(1-4), 1996, pp. 271-275
Authors:
VILELA MF
MEDELCI N
BENSAOULA A
FREUNDLICH A
RENAUD P
Citation: Mf. Vilela et al., FIRST EPITAXIAL INP TUNNEL-JUNCTIONS GROWN BY CHEMICAL BEAM EPITAXY, Journal of crystal growth, 164(1-4), 1996, pp. 465-469
Authors:
BENSAOULA AH
FREUNDLICH A
BENSAOULA A
ROSSIGNOL V
PONCHET A
Citation: Ah. Bensaoula et al., CHEMICAL BEAM EPITAXY OF STRAIN BALANCED GAP GAAS/INP/GAAS SUPERLATTICES/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(2), 1994, pp. 1110-1112
Authors:
VILELA MF
ROSSIGNOL V
BENSAOULA A
MEDELCI N
FREUNDLICH A
Citation: Mf. Vilela et al., CHEMICAL BEAM EPITAXY OF INP-BASED SOLAR-CELLS AND TUNNEL-JUNCTIONS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(2), 1994, pp. 1251-1253
Authors:
TAFERNER WT
FREUNDLICH A
BENSAOULA A
IGNATIEV A
WATERS K
EIPERSSMITH K
GUEHENNEUC M
SCHULTZ JA
Citation: Wt. Taferner et al., IN-SITU OBSERVATIONS OF GE(001) AND GE SI(001) USING LOW-ENERGY ION-SCATTERING/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(6), 1994, pp. 3012-3017
Authors:
BENSAOULA AH
BENSAOULA A
FREUNDLICH A
Citation: Ah. Bensaoula et al., EFFECTS OF ION-BEAM AND ELECTRON-CYCLOTRON-RESONANCE ETCH-INDUCED DAMAGE ON THE OPTICAL-PROPERTIES OF MULTIPLE-QUANTUM-WELL STRUCTURES, Journal of applied physics, 75(6), 1994, pp. 2818-2822
Authors:
FREUNDLICH A
BENSAOULA AH
BENSAOULA A
Citation: A. Freundlich et al., GROWTH OF INAS INP AND INASP/INP HETEROSTRUCTURES BY CHEMICAL BEAM EPITAXY/, Journal of crystal growth, 127(1-4), 1993, pp. 246-250
Authors:
WATERS K
BENSAOULA A
SCHULTZ A
EIPERSSMITH K
FREUNDLICH A
Citation: K. Waters et al., INSITU DOPING AND COMPOSITION MONITORING FOR MOLECULAR-BEAM EPITAXY USING MASS-SPECTROSCOPY OF RECOILED IONS (MSRI), Journal of crystal growth, 127(1-4), 1993, pp. 972-975
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