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Results: 1-25/35
Authors:
Pages, O
Ajjoun, M
Laurenti, JP
Bormann, D
Chauvet, C
Tournie, E
Faurie, JP
Gorochov, O
Citation: O. Pages et al., Raman study of ZnxBe1-xSe solid solutions, OPT MATER, 17(1-2), 2001, pp. 323-326
Authors:
Vigue, F
Faurie, JP
Citation: F. Vigue et Jp. Faurie, Zn(MgBe)Se ultraviolet photodetectors, J ELEC MAT, 30(6), 2001, pp. 662-666
Authors:
Velicu, S
Badano, G
Selamet, Y
Grein, CH
Faurie, JP
Sivananthan, S
Boieriu, P
Rafol, D
Ashokan, R
Citation: S. Velicu et al., HgCdTe/CdTe/Si infrared photodetectors grown by MBE for near-room temperature operation, J ELEC MAT, 30(6), 2001, pp. 711-716
Authors:
Davies, JJ
Wolverson, D
Strauf, S
Michler, P
Gutowski, J
Klude, M
Ohkawa, K
Hommel, D
Tournie, E
Faurie, JP
Citation: Jj. Davies et al., Direct evidence for the trigonal symmetry of shallow phosphorus acceptors in ZnSe - art. no. 205206, PHYS REV B, 6420(20), 2001, pp. 5206
Authors:
Tournie, E
Vigue, F
Laugt, M
Faurie, JP
Citation: E. Tournie et al., Wide-band-gap ZnMgBeSe alloys grown onto GaAs by molecular beam epitaxy, J CRYST GR, 223(4), 2001, pp. 461-465
Authors:
Vigue, F
Vennegues, P
Deparis, C
Vezian, S
Laugt, M
Faurie, JP
Citation: F. Vigue et al., Growth modes and microstructures of ZnO layers deposited by plasma-assisted molecular-beam epitaxy on (0001) sapphire, J APPL PHYS, 90(10), 2001, pp. 5115-5119
Authors:
Vigue, F
Tournie, E
Faurie, JP
Citation: F. Vigue et al., Evaluation of the potential of ZnSe and Zn(Mg)BeSe compounds for ultraviolet photodetection, IEEE J Q EL, 37(9), 2001, pp. 1146-1152
Authors:
Vigue, F
Vennegues, P
Vezian, S
Laugt, M
Faurie, JP
Citation: F. Vigue et al., Defect characterization in ZnO layers grown by plasma-enhanced molecular-beam epitaxy on (0001) sapphire substrates, APPL PHYS L, 79(2), 2001, pp. 194-196
Authors:
Vigue, F
Tournie, E
Faurie, JP
Monroy, E
Calle, F
Munoz, E
Citation: F. Vigue et al., Visible-blind ultraviolet photodetectors based on ZnMgBeSe Schottky barrier diodes, APPL PHYS L, 78(26), 2001, pp. 4190-4192
Authors:
Faurie, JP
Tournie, E
Citation: Jp. Faurie et E. Tournie, ZnSe-based heterostructures for blue-green lasers, CR AC S IV, 1(1), 2000, pp. 23-33
Authors:
Chauvet, C
Tournie, E
Faurie, JP
Citation: C. Chauvet et al., Nature of the band gap in Zn1-xBexSe alloys, PHYS REV B, 61(8), 2000, pp. 5332-5336
Authors:
Lavagne, S
Levade, C
Vanderschaeve, G
Crestou, J
Tournie, E
Faurie, JP
Citation: S. Lavagne et al., Transmission electron microscopy study of crystal defects in ZnSe/GaAs(001) epilayers, J PHYS-COND, 12(49), 2000, pp. 10287-10293
Authors:
Chauvet, C
Tournie, E
Vennegues, P
Faurie, JP
Citation: C. Chauvet et al., Molecular beam epitaxy of ZnxBe1-xSe: Influence of the substrate nature and epilayer properties, J ELEC MAT, 29(6), 2000, pp. 883-886
Authors:
Desgardin, P
Oila, J
Saarinen, K
Hautojarvi, P
Tournie, E
Faurie, JP
Corbel, C
Citation: P. Desgardin et al., Native vacancies in nitrogen-doped and undoped ZnSe layers studied by positron annihilation, PHYS REV B, 62(23), 2000, pp. 15711-15717
Authors:
Tournie, E
Neu, G
Teisseire, M
Faurie, JP
Pelletier, H
Theys, B
Citation: E. Tournie et al., Spectroscopy of the interaction between nitrogen and hydrogen in ZnSe epitaxial layers, PHYS REV B, 62(19), 2000, pp. 12868-12874
Authors:
Neu, G
Tournie, E
Morhain, C
Teisseire, M
Faurie, JP
Citation: G. Neu et al., Spectroscopy of the phosphorus impurity in ZnSe epitaxial layers grown by molecular-beam epitaxy, PHYS REV B, 61(23), 2000, pp. 15789-15796
ZnSe- and ZnMgBeSe-based Schottky barrier photodetectors for the blue and ultraviolet spectral range
Authors:
Vigue, F
Bouille, A
Tournie, E
Faurie, JP
Citation: F. Vigue et al., ZnSe- and ZnMgBeSe-based Schottky barrier photodetectors for the blue and ultraviolet spectral range, PHYS ST S-A, 180(1), 2000, pp. 301-305
Authors:
Chauvet, C
Tournie, E
Faurie, JP
Citation: C. Chauvet et al., Molecular beam epitaxial growth and characterization of Be(Zn)Se on Si(001) and GaAs(001), J CRYST GR, 214, 2000, pp. 95-99
Authors:
Tournie, E
Pelletier, H
Neu, G
Theys, B
Lusson, A
Teisseire, M
Chauvet, C
Faurie, JP
Citation: E. Tournie et al., Hydrogen/deuterium: a probe to investigate carrier-compensation in ZnSe : N, J CRYST GR, 214, 2000, pp. 507-510
Authors:
Guenaud, C
Deleporte, E
Filoramo, A
Lelong, P
Delalande, C
Morhain, C
Tournie, E
Faurie, JP
Citation: C. Guenaud et al., Study of the band alignment in (Zn, Cd)Se/ZnSe quantum wells by means of photoluminescence excitation spectroscopy, J APPL PHYS, 87(4), 2000, pp. 1863-1868
Authors:
Vigue, F
de Mierry, P
Faurie, JP
Monroy, E
Calle, F
Munoz, E
Citation: F. Vigue et al., High detectivity ZnSe-based Schottky barrier photodetectors for blue and near-ultraviolet spectral range, ELECTR LETT, 36(9), 2000, pp. 826-827
Authors:
Vigue, F
Tournie, E
Faurie, JP
Citation: F. Vigue et al., ZnSe-based Schottky barrier photodetectors, ELECTR LETT, 36(4), 2000, pp. 352-354
Authors:
Pages, O
Ajjoun, M
Laurenti, JP
Bormann, D
Chauvet, C
Tournie, E
Faurie, JP
Citation: O. Pages et al., Raman study of ZnxBe1-xSe alloy (100) epitaxial layers, APPL PHYS L, 77(4), 2000, pp. 519-521
Authors:
Monroy, E
Vigue, F
Calle, F
Izpura, JI
Munoz, E
Faurie, JP
Citation: E. Monroy et al., Time response analysis of ZnSe-based Schottky barrier photodetectors, APPL PHYS L, 77(17), 2000, pp. 2761-2763
Authors:
Xin, Y
James, EM
Arslan, I
Sivananthan, S
Browning, ND
Pennycook, SJ
Omnes, F
Beaumont, B
Faurie, JP
Gibart, P
Citation: Y. Xin et al., Direct experimental observation of the local electronic structure at threading dislocations in metalorganic vapor phase epitaxy grown wurtzite GaN thin films, APPL PHYS L, 76(4), 2000, pp. 466-468