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Results: 1-17 |
Results: 17
Fundamental aspects of silicon oxidation - Introduction
Authors: Feldman, LC
Citation: Lc. Feldman, Fundamental aspects of silicon oxidation - Introduction, SPR S MAT S, 46, 2001, pp. 1-11
Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide
Authors: Chung, GY Tin, CC Williams, JR McDonald, K Chanana, RK Weller, RA Pantelides, ST Feldman, LC Holland, OW Das, MK Palmour, JW
Citation: Gy. Chung et al., Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide, IEEE ELEC D, 22(4), 2001, pp. 176-178
Ion beam measurements of Sn/In ratios in indium tin oxide films prepared by pulsed-laser deposition
Authors: Ren, XT Huang, MB Amadon, S Lanford, WA Paliza, MAM Feldman, LC
Citation: Xt. Ren et al., Ion beam measurements of Sn/In ratios in indium tin oxide films prepared by pulsed-laser deposition, NUCL INST B, 174(1-2), 2001, pp. 187-193
Light emission from 4H SiC MOSFETs with and without NO passivation
Authors: Stahlbush, RE Macfarlane, PJ Williams, JR Chung, GY Feldman, LC McDonald, K
Citation: Re. Stahlbush et al., Light emission from 4H SiC MOSFETs with and without NO passivation, MICROEL ENG, 59(1-4), 2001, pp. 393-398
Vibrational dynamics of bond-center hydrogen in crystalline silicon - art.no. 195203
Authors: Budde, M Cheney, CP Lupke, G Tolk, NH Feldman, LC
Citation: M. Budde et al., Vibrational dynamics of bond-center hydrogen in crystalline silicon - art.no. 195203, PHYS REV B, 6319(19), 2001, pp. 5203
Lifetimes of hydrogen and deuterium related vibrational modes in silicon -art. no. 145501
Authors: Budde, M Lupke, G Chen, E Zhang, X Tolk, NH Feldman, LC Tarhan, E Ramdas, AK Stavola, M
Citation: M. Budde et al., Lifetimes of hydrogen and deuterium related vibrational modes in silicon -art. no. 145501, PHYS REV L, 8714(14), 2001, pp. 5501
Enhanced hysteresis in the semiconductor-to-metal phase transition of VO2 precipitates formed in SiO2 by ion implantation
Authors: Lopez, R Boatner, LA Haynes, TE Haglund, RF Feldman, LC
Citation: R. Lopez et al., Enhanced hysteresis in the semiconductor-to-metal phase transition of VO2 precipitates formed in SiO2 by ion implantation, APPL PHYS L, 79(19), 2001, pp. 3161-3163
Vibrational lifetime of bond-center hydrogen in crystalline silicon
Authors: Budde, M Lupke, G Cheney, CP Tolk, NH Feldman, LC
Citation: M. Budde et al., Vibrational lifetime of bond-center hydrogen in crystalline silicon, PHYS REV L, 85(7), 2000, pp. 1452-1455
Local vibrational modes of isolated hydrogen in germanium
Authors: Budde, M Nielsen, BB Cheney, CP Tolk, NH Feldman, LC
Citation: M. Budde et al., Local vibrational modes of isolated hydrogen in germanium, PHYS REV L, 85(14), 2000, pp. 2965-2968
Effects of anneals in ammonia on the interface trap density near the band edges in 4H-silicon carbide metal-oxide-semiconductor capacitors
Authors: Chung, G Tin, CC Williams, JR McDonald, K Di Ventra, M Chanana, RK Pantelides, ST Feldman, LC Weller, RA
Citation: G. Chung et al., Effects of anneals in ammonia on the interface trap density near the band edges in 4H-silicon carbide metal-oxide-semiconductor capacitors, APPL PHYS L, 77(22), 2000, pp. 3601-3603
Fowler-Nordheim hole tunneling in p-SiC/SiO2 structures
Authors: Chanana, RK McDonald, K Di Ventra, M Pantelides, ST Feldman, LC Chung, GY Tin, CC Williams, JR Weller, RA
Citation: Rk. Chanana et al., Fowler-Nordheim hole tunneling in p-SiC/SiO2 structures, APPL PHYS L, 77(16), 2000, pp. 2560-2562
Comparison of nitrogen incorporation in SiO2/SiC and SiO2/Si structures
Authors: McDonald, K Huang, MB Weller, RA Feldman, LC Williams, JR Stedile, FC Baumvol, IJR Radtke, C
Citation: K. Mcdonald et al., Comparison of nitrogen incorporation in SiO2/SiC and SiO2/Si structures, APPL PHYS L, 76(5), 2000, pp. 568-570
Complete surface exfoliation of 4H-SiC by H+- and Si+-coimplantation
Authors: Bennett, JA Holland, OW Budde, M Thomas, DK Feldman, LC
Citation: Ja. Bennett et al., Complete surface exfoliation of 4H-SiC by H+- and Si+-coimplantation, APPL PHYS L, 76(22), 2000, pp. 3265-3267
Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide
Authors: Chung, GY Tin, CC Williams, JR McDonald, K Di Ventra, M Pantelides, ST Feldman, LC Weller, RA
Citation: Gy. Chung et al., Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide, APPL PHYS L, 76(13), 2000, pp. 1713-1715
Vacancy-hydrogen complexes in group-IV semiconductors
Authors: Budde, M Nielsen, BB Keay, JC Feldman, LC
Citation: M. Budde et al., Vacancy-hydrogen complexes in group-IV semiconductors, PHYSICA B, 274, 1999, pp. 208-211
Political judgment with a difference: Agonistic democracy and the limits of "enlarged mentality"
Authors: Feldman, LC
Citation: Lc. Feldman, Political judgment with a difference: Agonistic democracy and the limits of "enlarged mentality", POLITY, 32(1), 1999, pp. 1-24
Resistivity and oxygen content of indium tin oxide films deposited at roomtemperature by pulsed-laser ablation
Authors: Wu, Y Maree, CHM Haglund, RF Hamilton, JD Paliza, MAM Huang, MB Feldman, LC Weller, RA
Citation: Y. Wu et al., Resistivity and oxygen content of indium tin oxide films deposited at roomtemperature by pulsed-laser ablation, J APPL PHYS, 86(2), 1999, pp. 991-994
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