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Results:
1-10
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Results: 10
Authors:
Bracale, A
Ferlet-Cavrois, V
Fel, N
Pasquet, D
Gautier, JL
Pelloie, JL
De Poncharra, JD
Citation: A. Bracale et al., A new approach for SOI devices small-signal parameters extraction, ANALOG IN C, 25(2), 2000, pp. 157-169
Authors:
Schwank, JR
Shaneyfelt, MR
Dodd, PE
Ferlet-Cavrois, V
Loemker, RA
Winokur, PS
Fleetwood, DM
Paillet, P
Leray, JL
Draper, BL
Witczak, SC
Riewe, LC
Citation: Jr. Schwank et al., Correlation between Co-60 and X-ray radiation-induced charge buildup in silicon-on-insulator buried oxides, IEEE NUCL S, 47(6), 2000, pp. 2175-2182
Authors:
Ferlet-Cavrois, V
Colladant, T
Paillet, P
Leray, JL
Musseau, O
Schwank, JR
Shaneyfelt, MR
Pelloie, JL
de Poncharra, JD
Citation: V. Ferlet-cavrois et al., Worst-case bias during total dose irradiation of SOI transistors, IEEE NUCL S, 47(6), 2000, pp. 2183-2188
Authors:
Musseau, O
Ferlet-Cavrois, V
Pelloie, JL
Buchner, S
McMorrow, D
Campbell, AB
Citation: O. Musseau et al., Laser probing of bipolar amplification in 0.25-mu m MOS/SOI transistors, IEEE NUCL S, 47(6), 2000, pp. 2196-2203
Authors:
Ferlet-Cavrois, V
Paillet, P
Musseau, O
Leray, JL
Faynot, O
Raynaud, C
Pelloie, JL
Citation: V. Ferlet-cavrois et al., Total dose behavior of partially depleted SOI dynamic threshold voltage MOS (DTMOS) for very low supply voltage applications (0.6-1V), IEEE NUCL S, 47(3), 2000, pp. 613-619
Authors:
Leray, JL
Paillet, P
Ferlet-Cavrois, V
Tavernier, C
Belhaddad, K
Penzin, O
Citation: Jl. Leray et al., Impact of technology scaling in SOI back-channel total dose tolerance. A 2-C numerical study using self-consistent oxide code, IEEE NUCL S, 47(3), 2000, pp. 620-626
Authors:
Ferlet-Cavrois, V
Bracale, A
Marcandella, C
Musseau, O
Pelloie, JL
Raynaud, C
Faynot, O
Citation: V. Ferlet-cavrois et al., Designing MOS/SOI transistors for high frequency and low voltage applications, MICROEL ENG, 48(1-4), 1999, pp. 351-354
Authors:
Mousseau, O
Ferlet-Cavrois, V
Campbell, AB
Knudson, AR
Buchner, S
Fischer, B
Schlogl, M
Citation: O. Mousseau et al., Application of an ion microbeam to determine the radial carrier density inan ion track, NUCL INST B, 146(1-4), 1998, pp. 607-612
Authors:
Ferlet-Cavrois, V
Quoizola, S
Musseau, O
Flament, O
Leray, JL
Pelloie, JL
Raynaud, C
Faynot, O
Citation: V. Ferlet-cavrois et al., Total dose induced latch in short channel NMOS/SOI transistors, IEEE NUCL S, 45(6), 1998, pp. 2458-2466
Authors:
Musseau, O
Ferlet-Cavrois, V
Campbell, AB
Knudson, AR
Buchner, S
Fischer, B
Schlogl, M
Citation: O. Musseau et al., Technique to measure an ion track profile, IEEE NUCL S, 45(6), 1998, pp. 2563-2570
Risultati:
1-10
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