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Results:
1-19
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Results: 19
Authors:
Bechstedt, F
Fissel, A
Furthmuller, J
Grossner, U
Zywietz, A
Citation: F. Bechstedt et al., Native defects and complexes in SiC, J PHYS-COND, 13(40), 2001, pp. 9027-9037
Authors:
Fissel, A
Akhtariev, R
Kaiser, U
Richter, W
Citation: A. Fissel et al., MBE growth of Si on SiC(0001): from superstructures to islands, J CRYST GR, 227, 2001, pp. 777-781
Authors:
Fissel, A
Citation: A. Fissel, High-quality SIC epitaxial layers and low-dimensional heteropolytypic SIC structures grown by solid-source MBE, J CRYST GR, 227, 2001, pp. 805-810
Authors:
Fissel, A
Richter, W
Furthmuller, J
Bechstedt, F
Citation: A. Fissel et al., On the nature of the D-1-defect center in SiC: A photoluminescence study of layers grown by solid-source molecular-beam epitaxy, APPL PHYS L, 78(17), 2001, pp. 2512-2514
Authors:
Fissel, A
Richter, W
Citation: A. Fissel et W. Richter, MBE growth kinetics of Si on heavily-doped Si(111): P: a self-surfactant, MAT SCI E B, 73(1-3), 2000, pp. 163-167
Authors:
Fissel, A
Akhtariev, R
Richter, W
Citation: A. Fissel et al., Stranski-Krastanov growth of Si on SiC(0001), THIN SOL FI, 380(1-2), 2000, pp. 42-45
Authors:
Hess, G
Bauer, A
Krausslich, J
Fissel, A
Schroter, B
Richter, W
Schell, N
Matz, W
Goetz, K
Citation: G. Hess et al., Si/Ge-nanocrystals on SiC(0001), THIN SOL FI, 380(1-2), 2000, pp. 86-88
Authors:
Fissel, A
Kaiser, U
Schroter, B
Krausslich, J
Richter, W
Citation: A. Fissel et al., MBE-growth of heteropolytypic low-dimensional structures of SiC, THIN SOL FI, 380(1-2), 2000, pp. 89-91
Authors:
Fissel, A
Citation: A. Fissel, Thermodynamic considerations of the epitaxial growth of SiC polytypes, J CRYST GR, 212(3-4), 2000, pp. 438-450
Authors:
Fissel, A
Schroter, B
Kaiser, U
Richter, W
Citation: A. Fissel et al., Advances in the molecular-beam epitaxial growth of artificially layered heteropolytypic structures of SiC, APPL PHYS L, 77(15), 2000, pp. 2418-2420
Authors:
Kipshidze, DG
Schenk, HP
Fissel, A
Kaiser, U
Schulze, J
Richter, W
Weihnacht, M
Kunze, R
Krausslich, J
Citation: Dg. Kipshidze et al., Molecular-beam epitaxy of a strongly lattice-mismatched heterosystem AlN/Si(111) for application in SAW devices, SEMICONDUCT, 33(11), 1999, pp. 1241-1246
Authors:
Fissel, A
Kaiser, U
Krausslich, J
Pfennighaus, K
Schroter, B
Schulz, J
Richter, W
Citation: A. Fissel et al., Epitaxial growth of SiC-heterostructures on alpha-SiC(0001) by solid-source MBE, MAT SCI E B, 61-2, 1999, pp. 139-142
Authors:
Bauer, A
Krausslich, J
Kocher, B
Goetz, K
Fissel, A
Richter, W
Citation: A. Bauer et al., X-ray investigations of MBE-grown heteroepitaxial SiC layers on 6H-SiC substrates, MAT SCI E B, 61-2, 1999, pp. 179-182
Authors:
Schenk, HPD
Kaiser, U
Kipshidze, GD
Fissel, A
Krausslich, J
Hobert, H
Schulze, J
Richter, W
Citation: Hpd. Schenk et al., Growth of atomically smooth AlN films with a 5 : 4 coincidence interface on Si(111) by MBE, MAT SCI E B, 59(1-3), 1999, pp. 84-87
Authors:
Kaiser, U
Khodos, I
Brown, PD
Chuvilin, A
Albrecht, M
Humphreys, CJ
Fissel, A
Richter, W
Citation: U. Kaiser et al., A transmission electron microscopy investigation of SiC films grown on SiCsubstrates by solid-source molecular beam epitaxy, J MATER RES, 14(8), 1999, pp. 3226-3236
Authors:
Fissel, A
Pfennighaus, K
Kaiser, U
Schroter, B
Richter, W
Citation: A. Fissel et al., Mechanisms of homo- and heteroepitaxial growth of SiC on alpha-SiC(0001) by solid-source molecular beam epitaxy, J ELEC MAT, 28(3), 1999, pp. 206-213
Authors:
Schenk, HPD
Kipshidze, GD
Lebedev, VB
Shokhovets, S
Goldhahn, R
Krausslich, J
Fissel, A
Richter, W
Citation: Hpd. Schenk et al., Epitaxial growth of AlN and GaN on Si(111) by plasma-assisted molecular beam epitaxy, J CRYST GR, 202, 1999, pp. 359-364
Authors:
Schenk, HPD
Kipshidze, GD
Kaiser, U
Fissel, A
Krausslich, J
Schulze, J
Richter, W
Citation: Hpd. Schenk et al., Investigation of two-dimensional growth of AlN(0 0 0 1) on Si(1 1 1) by plasma-assisted molecular beam epitaxy, J CRYST GR, 200(1-2), 1999, pp. 45-54
Authors:
Kaiser, U
Newcomb, SB
Stobbs, WM
Adamik, M
Fissel, A
Richter, W
Citation: U. Kaiser et al., A transmission electron microscopy investigation of SiC films grown on Si(111) substrates by solid-source molecular beam epitaxy, J MATER RES, 13(12), 1998, pp. 3571-3579
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