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Results: 1-25 | 26-28
Results: 1-25/28
Silicon-on-insulator non-volatile field-effect transistor memory
Authors: Schwank, JR Shaneyfelt, MR Meisenheimer, TL Draper, BL Vanhesden, K Fleetwood, DM
Citation: Jr. Schwank et al., Silicon-on-insulator non-volatile field-effect transistor memory, MICROEL ENG, 59(1-4), 2001, pp. 253-258
Defect generation by hydrogen at the Si-SiO2 interface - art. no. 165506
Authors: Rashkeev, SN Fleetwood, DM Schrimpf, RD Pantelides, ST
Citation: Sn. Rashkeev et al., Defect generation by hydrogen at the Si-SiO2 interface - art. no. 165506, PHYS REV L, 8716(16), 2001, pp. 5506
An overview of radiation effects on electronics in the space telecommunications environment
Authors: Fleetwood, DM Winokur, PS Dodd, PE
Citation: Dm. Fleetwood et al., An overview of radiation effects on electronics in the space telecommunications environment, MICROEL REL, 40(1), 2000, pp. 17-26
Correlation between Co-60 and X-ray radiation-induced charge buildup in silicon-on-insulator buried oxides
Authors: Schwank, JR Shaneyfelt, MR Dodd, PE Ferlet-Cavrois, V Loemker, RA Winokur, PS Fleetwood, DM Paillet, P Leray, JL Draper, BL Witczak, SC Riewe, LC
Citation: Jr. Schwank et al., Correlation between Co-60 and X-ray radiation-induced charge buildup in silicon-on-insulator buried oxides, IEEE NUCL S, 47(6), 2000, pp. 2175-2182
Characterization of X-ray radiation damage in Si/SiO2 structures using second-harmonic generation
Authors: Marka, Z Singh, SK Wang, W Lee, SC Kavich, J Glebov, B Rashkeev, SN Karmarkar, AP Albridge, RG Pantelides, ST Schrimpf, RD Fleetwood, DM Tolk, NH
Citation: Z. Marka et al., Characterization of X-ray radiation damage in Si/SiO2 structures using second-harmonic generation, IEEE NUCL S, 47(6), 2000, pp. 2256-2261
Reactions of hydrogen with Si-SiO2 interfaces
Authors: Pantelides, ST Rashkeev, SN Buczko, R Fleetwood, DM Schrimpf, RD
Citation: St. Pantelides et al., Reactions of hydrogen with Si-SiO2 interfaces, IEEE NUCL S, 47(6), 2000, pp. 2262-2268
Defects and nanocrystals generated by Si implantation into a-SiO2
Authors: Nicklaw, CJ Pagey, MP Pantelides, ST Fleetwood, DM Schrimpf, RD Galloway, KF Wittig, JE Howard, BM Taw, E McNeil, WH Conley, JF
Citation: Cj. Nicklaw et al., Defects and nanocrystals generated by Si implantation into a-SiO2, IEEE NUCL S, 47(6), 2000, pp. 2269-2275
Low energy electron-excited nanoscale luminescence: A tool to detect trap activation by ionizing radiation
Authors: White, BD Brillson, LJ Lee, SC Fleetwood, DM Schrimpf, RD Pantelides, ST Lee, YM Lucovsky, G
Citation: Bd. White et al., Low energy electron-excited nanoscale luminescence: A tool to detect trap activation by ionizing radiation, IEEE NUCL S, 47(6), 2000, pp. 2276-2280
Hydrogen-related defects in irradiated SiO2
Authors: Bunson, PE Di Ventra, M Pantelides, ST Fleetwood, DM Schrimpf, RD
Citation: Pe. Bunson et al., Hydrogen-related defects in irradiated SiO2, IEEE NUCL S, 47(6), 2000, pp. 2289-2296
Total dose effects in composite nitride-oxide films
Authors: Lee, SC Raparla, A Li, YF Gasiot, G Schrimpf, RD Fleetwood, DM Galloway, KF Featherby, M Johnson, D
Citation: Sc. Lee et al., Total dose effects in composite nitride-oxide films, IEEE NUCL S, 47(6), 2000, pp. 2297-2304
Dielectric breakdown of thin oxides during ramped current-temperature stress
Authors: Fleetwood, DM Riewe, LC Winokur, PS Sexton, FW
Citation: Dm. Fleetwood et al., Dielectric breakdown of thin oxides during ramped current-temperature stress, IEEE NUCL S, 47(6), 2000, pp. 2305-2310
Origins of total-dose response variability in linear bipolar microcircuits
Authors: Barnaby, HJ Cirba, CR Schrimpf, RD Fleetwood, DM Pease, RL Shaneyfelt, MR Turflinger, T Krieg, JF Maher, MC
Citation: Hj. Barnaby et al., Origins of total-dose response variability in linear bipolar microcircuits, IEEE NUCL S, 47(6), 2000, pp. 2342-2349
Thermal-stress effects and enhanced low dose rate sensitivity in linear bipolar ICs
Authors: Shaneyfelt, MR Schwank, JR Witczak, SC Fleetwood, DM Pease, RL Winokur, PS Riewe, LC Hash, GL
Citation: Mr. Shaneyfelt et al., Thermal-stress effects and enhanced low dose rate sensitivity in linear bipolar ICs, IEEE NUCL S, 47(6), 2000, pp. 2539-2545
Temperature-independent switching rates for a random telegraph signal in asilicon metal-oxide-semiconductor field-effect transistor at low temperatures
Authors: Scofield, JH Borland, N Fleetwood, DM
Citation: Jh. Scofield et al., Temperature-independent switching rates for a random telegraph signal in asilicon metal-oxide-semiconductor field-effect transistor at low temperatures, APPL PHYS L, 76(22), 2000, pp. 3248-3250
Reactions and diffusion during annealing-induced H+ generation in SOI buried oxides
Authors: Vanheusden, K Fleetwood, DM Devine, RAB Warren, WL
Citation: K. Vanheusden et al., Reactions and diffusion during annealing-induced H+ generation in SOI buried oxides, MICROEL ENG, 48(1-4), 1999, pp. 363-366
Thermally stimulated current in SiO2
Authors: Fleetwood, DM Reber, RA Riewe, LC Winokur, PS
Citation: Dm. Fleetwood et al., Thermally stimulated current in SiO2, MICROEL REL, 39(9), 1999, pp. 1323-1336
A non-volatile MOSFET memory device based on mobile protons in SiO2 thin films
Authors: Vanheusden, K Warren, WL Devine, RAB Fleetwood, DM Draper, BL Schwank, JR
Citation: K. Vanheusden et al., A non-volatile MOSFET memory device based on mobile protons in SiO2 thin films, J NON-CRYST, 254, 1999, pp. 1-10
The role of electron transport and trapping in MOS total-dose modeling
Authors: Fleetwood, DM Winokur, PS Riewe, LC Flament, O Paillet, P Leray, JL
Citation: Dm. Fleetwood et al., The role of electron transport and trapping in MOS total-dose modeling, IEEE NUCL S, 46(6), 1999, pp. 1519-1525
Considerations on isochronal anneal technique: from measurement to physics
Authors: Flament, O Paillet, P Leray, JL Fleetwood, DM
Citation: O. Flament et al., Considerations on isochronal anneal technique: from measurement to physics, IEEE NUCL S, 46(6), 1999, pp. 1526-1533
The effect of near-interface network strain on proton trapping in SiO2
Authors: Vanheusden, K Korambath, PP Kurtz, HA Karna, SP Fleetwood, DM Shedd, WM Pugh, RD
Citation: K. Vanheusden et al., The effect of near-interface network strain on proton trapping in SiO2, IEEE NUCL S, 46(6), 1999, pp. 1562-1567
Stability of trapped electrons in SiO2
Authors: Fleetwood, DM Winokur, PS Flament, O Leray, JL
Citation: Dm. Fleetwood et al., Stability of trapped electrons in SiO2, APPL PHYS L, 74(20), 1999, pp. 2969-2971
Chemical kinetics of mobile-proton generation and annihilation in SiO2 thin films
Authors: Vanheusden, K Warren, WL Fleetwood, DM Schwank, JR Shaneyfelt, MR Draper, BL Winokur, PS Devine, RAB Archer, LB Brown, GA Wallace, RM
Citation: K. Vanheusden et al., Chemical kinetics of mobile-proton generation and annihilation in SiO2 thin films, APPL PHYS L, 73(5), 1999, pp. 674-676
Space charge limited degradation of bipolar oxides at low electric fields
Authors: Witczak, SC Lacoe, RC Mayer, DC Fleetwood, DM Schrimpf, RD Galloway, KF
Citation: Sc. Witczak et al., Space charge limited degradation of bipolar oxides at low electric fields, IEEE NUCL S, 45(6), 1998, pp. 2339-2351
Modeling low-dose-rate effects in irradiated bipolar-base oxides
Authors: Graves, RJ Cirba, CR Schrimpf, RD Milanowski, RJ Michez, A Fleetwood, DM Witczak, SC Saigne, F
Citation: Rj. Graves et al., Modeling low-dose-rate effects in irradiated bipolar-base oxides, IEEE NUCL S, 45(6), 1998, pp. 2352-2360
Effects of isochronal annealing and irradiation temperature on radiation-induced trapped charge
Authors: Fleetwood, DM Winokur, PS Shaneyfelt, MR Riewe, LC Flament, O Paillet, P Leray, JL
Citation: Dm. Fleetwood et al., Effects of isochronal annealing and irradiation temperature on radiation-induced trapped charge, IEEE NUCL S, 45(6), 1998, pp. 2366-2374
Risultati: 1-25 | 26-28