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Results:
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Results: 21
Authors:
Fraboni, B
Gasparotto, A
Priolo, F
Scamarcio, G
Citation: B. Fraboni et al., High Fe2+/3+ trap concentration in heavily compensated implanted InP, APPL PHYS A, 73(1), 2001, pp. 35-38
Authors:
Troccoli, M
Mazzone, A
Scamarcio, G
Fraboni, B
Priolo, F
Gasparotto, A
Citation: M. Troccoli et al., Mid-infrared (3.5 mu m) electroluminescence from heavily Fe2+ ion-implanted semi-insulating InP, OPT MATER, 17(1-2), 2001, pp. 189-191
Authors:
Gasparotto, A
Fraboni, B
Priolo, F
Enrichi, F
Mazzone, A
Scamarcio, G
Troccoli, M
Mosca, R
Citation: A. Gasparotto et al., Assessment of electrical and optical properties of heavily Fe-implanted semi-insulating InP, MAT SCI E B, 80(1-3), 2001, pp. 202-205
Authors:
Troccoli, M
Scamarcio, G
Fraboni, B
Priolo, F
Gasparotto, A
Citation: M. Troccoli et al., Deep-level electroluminescence at 3.5 mu m from semi-insulating InP layersion implanted with Fe, SEMIC SCI T, 16(1), 2001, pp. L1-L3
Authors:
Cavallini, A
Fraboni, B
Auricchio, N
Caroli, E
Dusi, W
Chirco, P
Morigi, MP
Zanarini, M
Hage-Ali, M
Siffert, P
Fougeres, P
Citation: A. Cavallini et al., Irradiation-induced defects in CdTe and CdZnTe detectors, NUCL INST A, 458(1-2), 2001, pp. 392-399
Authors:
Fraboni, B
Gasparotto, A
Cesca, T
Priolo, F
Scamarcio, G
Mazzone, A
Troccoli, M
Citation: B. Fraboni et al., High Fe solubility in InP by high temperature ion implantation, NUCL INST B, 178, 2001, pp. 275-278
Authors:
Cavallini, A
Fraboni, B
Dusi, W
Zanarini, M
Hage-Ali, M
Siffert, P
Citation: A. Cavallini et al., Defects introduced in cadmium telluride by gamma irradiation, J APPL PHYS, 89(8), 2001, pp. 4664-4666
Authors:
Castaldini, A
Cavallini, A
Fraboni, B
Citation: A. Castaldini et al., On the role of extended defects in the transport properties of Er-doped Si, PHIL MAG B, 80(4), 2000, pp. 571-578
Authors:
Cavallini, A
Fraboni, B
Chirco, P
Morigi, MP
Zanarini, M
Auricchio, N
Caroli, E
Dusi, W
Fougeres, P
Hage-Ali, M
Siffert, P
Citation: A. Cavallini et al., Electronic properties of traps induced by gamma-irradiation in CdTe and CdZnTe detectors, NUCL INST A, 448(3), 2000, pp. 558-566
Authors:
Chirco, P
Caroli, E
Cavallini, A
Dusi, W
Fraboni, B
Hage-Ali, M
Morigi, MP
Siffert, P
Zanarini, M
Citation: P. Chirco et al., CdTe detectors' response to irradiation with high-energy gamma-rays, IEEE NUCL S, 47(6), 2000, pp. 2078-2083
Authors:
Cavallini, A
Fraboni, B
Dusi, W
Zanarini, M
Siffert, P
Citation: A. Cavallini et al., Deep levels and compensation in gamma-irradiated CdZnTe, APPL PHYS L, 77(20), 2000, pp. 3212-3214
Authors:
Castaldini, A
Cavallini, A
Fraboni, B
Pizzini, S
Citation: A. Castaldini et al., Charge collection mapping of the back-transfer process in Er-doped silicon, APPL PHYS L, 76(24), 2000, pp. 3585-3587
Authors:
Binetti, S
Pizzini, S
Cavallini, A
Fraboni, B
Citation: S. Binetti et al., Erbium-doped silicon epilayers grown by liquid-phase epitaxy, SEMICONDUCT, 33(6), 1999, pp. 596-597
Authors:
Gasparotto, A
Carnera, A
Paccagnella, A
Fraboni, B
Priolo, F
Gombia, E
Mosca, R
Rossetto, G
Citation: A. Gasparotto et al., Semi-insulating behaviour in Fe MeV implanted n-type InP, NUCL INST B, 148(1-4), 1999, pp. 411-415
Authors:
Frigeri, C
Carnera, A
Gasparotto, A
Priolo, F
Fraboni, B
Camporese, A
Rossetto, G
Citation: C. Frigeri et al., Gettering of Fe at the end of range loops in Fe-implanted InP, PHYS ST S-A, 171(1), 1999, pp. 209-214
Authors:
Cavallini, A
Fraboni, B
Binetti, S
Pizzini, S
Lazzarini, L
Salviati, G
Citation: A. Cavallini et al., On the influence of dislocations on the luminescence of Si : Er, PHYS ST S-A, 171(1), 1999, pp. 347-351
Authors:
Cavallini, A
Fraboni, B
Pizzini, S
Binetti, S
Sanguinetti, S
Lazzarini, L
Salviati, G
Citation: A. Cavallini et al., Electrical and optical characterization of Er-doped silicon grown by liquid phase epitaxy, J APPL PHYS, 85(3), 1999, pp. 1582-1586
Authors:
Gasparotto, A
Carnera, A
Frigeri, C
Priolo, F
Fraboni, B
Camporese, A
Rossetto, G
Citation: A. Gasparotto et al., Interaction between Fe, dopants, and secondary defects in MeV Fe ion implanted InP, J APPL PHYS, 85(2), 1999, pp. 753-760
Authors:
Gasparotto, A
Carnera, A
Paccagnella, A
Fraboni, B
Priolo, F
Gombia, E
Mosca, R
Citation: A. Gasparotto et al., High-resistance buried layers by MeV Fe implantation in n-type InP, APPL PHYS L, 75(5), 1999, pp. 668-670
Authors:
Cavallini, A
Fraboni, B
Pizzini, S
Binetti, S
Lazzarini, L
Salviati, G
Citation: A. Cavallini et al., Electrical and optical analyses of Er-doped silicon grown by liquid-phase epitaxy, J LUMINESC, 80(1-4), 1998, pp. 343-346
Authors:
Binetti, S
Cavallini, A
Dellafiore, A
Fraboni, B
Grilli, E
Guzzi, M
Pizzini, S
Sanguinetti, S
Citation: S. Binetti et al., Erbium-doped silicon epilayers grown by liquid-phase epitaxy, J LUMINESC, 80(1-4), 1998, pp. 347-351
Risultati:
1-21
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