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Results: 1-18 |
Results: 18

Authors: MONTES L MULLER F GASPARD F HERINO R
Citation: L. Montes et al., INVESTIGATION ON THE ELECTROCHEMICAL DEPOSITION OF CADMIUM TELLURIDE IN POROUS SILICON, Thin solid films, 297(1-2), 1997, pp. 35-38

Authors: GELLOZ B BSIESY A GASPARD F MULLER F
Citation: B. Gelloz et al., CONDUCTION IN POROUS SILICON CONTACTED BY A LIQUID-PHASE, Thin solid films, 276(1-2), 1996, pp. 175-178

Authors: BSIESY A GELLOZ B GASPARD F MULLER F
Citation: A. Bsiesy et al., ORIGIN OF THE CHARGE-CARRIERS ACCUMULATION DEPLETION IN POROUS SILICON CONTACTED BY A LIQUID-PHASE, Journal of applied physics, 79(5), 1996, pp. 2513-2516

Authors: LIMACHER B LEROY D ARNOUX C GASPARD F
Citation: B. Limacher et al., AGING EFFECTS IN LA-NI-MN TRITIDES, Journal of alloys and compounds, 231(1-2), 1995, pp. 792-797

Authors: BSIESY A HORY MA GASPARD F HERINO R LIGEON M MULLER F ROMESTAIN R VIAL JC
Citation: A. Bsiesy et al., EFFECT OF THE OXIDATION ON THE POROUS SILICON VOLTAGE TUNABLE LUMINESCENCE, Microelectronic engineering, 28(1-4), 1995, pp. 233-236

Authors: BILLAT S GASPARD F HERINO R LIGEON M MULLER F ROMESTAIN F VIAL JC
Citation: S. Billat et al., ELECTROLUMINESCENCE OF HEAVILY-DOPED P-TYPE POROUS SILICON UNDER ELECTROCHEMICAL OXIDATION IN THE POTENTIOSTATIC REGIME, Thin solid films, 263(2), 1995, pp. 238-242

Authors: BSIESY A NICOLAU YF ERMOLIEFF A MULLER F GASPARD F
Citation: A. Bsiesy et al., ELECTROLUMINESCENCE FROM N(-TYPE POROUS SILICON CONTACTED WITH LAYER-BY-LAYER DEPOSITED POLYANILINE()), Thin solid films, 255(1-2), 1995, pp. 43-48

Authors: BSIESY A GASPARD F HERINO R LIGEON M MULLER F ROMESTAIN R VIAL JC
Citation: A. Bsiesy et al., VOLTAGE-INDUCED MODIFICATIONS OF POROUS SILICON LUMINESCENCE, Thin solid films, 255(1-2), 1995, pp. 80-86

Authors: HORY MA HERINO R LIGEON M MULLER F GASPARD F MIHALCESCU I VIAL JC
Citation: Ma. Hory et al., FOURIER-TRANSFORM IR MONITORING OF POROUS SILICON PASSIVATION DURING POSTTREATMENTS SUCH AS ANODIC-OXIDATION AND CONTACT WITH ORGANIC-SOLVENTS, Thin solid films, 255(1-2), 1995, pp. 200-203

Authors: GASPARD F
Citation: F. Gaspard, BETWEEN EARTH AND MACHINES, INDUSTRIALIZA TION AND WOMEN AT WORK - FRENCH - BAGLAGOKALP,L, Annales, 49(3), 1994, pp. 612-615

Authors: GASPARD F
Citation: F. Gaspard, ON PARITY - ORIGIN OF A CONCEPT - BIRTH O F A MOVEMENT, Nouvelles questions feministes, 15(4), 1994, pp. 29-44

Authors: BSIESY A VIAL JC GASPARD F HERINO R LIGEON M MIHALCESCU I MULLER F ROMESTAIN R
Citation: A. Bsiesy et al., LIGHT-EMISSION FROM POROUS SILICON UNDER PHOTOEXCITATION AND ELECTROEXCITATION, Journal of the Electrochemical Society, 141(11), 1994, pp. 3071-3076

Authors: BSIESY A MULLER F LIGEON M GASPARD F HERINO R ROMESTAIN R VIAL JC
Citation: A. Bsiesy et al., RELATION BETWEEN POROUS SILICON PHOTOLUMINESCENCE AND ITS VOLTAGE-TUNABLE ELECTROLUMINESCENCE, Applied physics letters, 65(26), 1994, pp. 3371-3373

Authors: VIAL JC BILLAT S BSIESY A FISHMAN G GASPARD F HERINO R LIGEON M MADEORE F MIHALCESCU I MULLER F ROMESTAIN R
Citation: Jc. Vial et al., BRIGHT VISIBLE-LIGHT EMISSION FROM ELECTROOXIDIZED POROUS SILICON - AQUANTUM CONFINEMENT EFFECT, Physica. B, Condensed matter, 185(1-4), 1993, pp. 593-602

Authors: BSIESY A MULLER F LIGEON M GASPARD F HERINO R ROMESTAIN R VIAL JC
Citation: A. Bsiesy et al., VOLTAGE-CONTROLLED SPECTRAL SHIFT OF POROUS SILICON ELECTROLUMINESCENCE, Physical review letters, 71(4), 1993, pp. 637-640

Authors: BSIESY A MULLER F MIHALCESCU I LIGEON M GASPARD F HERINO R ROMESTAIN R VIAL JC
Citation: A. Bsiesy et al., ELECTRICALLY-INDUCED SELECTIVE QUENCHING OF POROUS SILICON PHOTOLUMINESCENCE, Journal of luminescence, 57(1-6), 1993, pp. 29-32

Authors: MULLER F HERINO R LIGEON M GASPARD F ROMESTAIN R VIAL JC BSIESY A
Citation: F. Muller et al., PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE FROM ELECTROCHEMICALLY OXIDIZED POROUS SILICON LAYERS, Journal of luminescence, 57(1-6), 1993, pp. 283-292

Authors: LIGEON M MULLER F HERINO R GASPARD F VIAL JC ROMESTAIN R BILLAT S BSIESY A
Citation: M. Ligeon et al., ANALYSIS OF THE ELECTROLUMINESCENCE OBSERVED DURING THE ANODIC-OXIDATION OF POROUS LAYERS FORMED ON LIGHTLY P-DOPED SILICON, Journal of applied physics, 74(2), 1993, pp. 1265-1271
Risultati: 1-18 |