ACNP - Italian Periodicals Catalogue

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Results: 1-12 |

Results: 12

COMPARISON OF ALUMINUM-IMPLANTED AND BORON-IMPLANTED VERTICAL 6H-SIC P+N JUNCTION DIODES

Authors: RAMUNGUL N KHEMKA V TYAGI R CHOW TP GHEZZO M NEUDECK PG KRETCHMER J HENNESSY W BROWN DM

Citation: N. Ramungul et al., COMPARISON OF ALUMINUM-IMPLANTED AND BORON-IMPLANTED VERTICAL 6H-SIC P+N JUNCTION DIODES, Solid-state electronics, 42(1), 1998, pp. 17-22

MATERIAL AND N-P JUNCTION PROPERTIES OF N-IMPLANATED, P-IMPLANTED, AND N P-IMPLANTED SIC/

Authors: GARDNER JA EDWARDS A RAO MV PAPANICOLAOU N KELNER G HOLLAND OW CAPANO MA GHEZZO M KRETCHMER J

Citation: Ja. Gardner et al., MATERIAL AND N-P JUNCTION PROPERTIES OF N-IMPLANATED, P-IMPLANTED, AND N P-IMPLANTED SIC/, Journal of applied physics, 83(10), 1998, pp. 5118-5124

SILICON-CARBIDE MOSFET INTEGRATED-CIRCUIT TECHNOLOGY

Authors: BROWN DM DOWNEY E GHEZZO M KRETCHMER J KRISHNAMURTHY V HENNESY W MICHON G

Citation: Dm. Brown et al., SILICON-CARBIDE MOSFET INTEGRATED-CIRCUIT TECHNOLOGY, Physica status solidi. a, Applied research, 162(1), 1997, pp. 459-479

NITROGEN AND ALUMINUM IMPLANTATION IN HIGH-RESISTIVITY SILICON-CARBIDE

Authors: DWIGHT D RAO MV HOLLAND OW KELNER G CHI PH KRETCHMER J GHEZZO M

Citation: D. Dwight et al., NITROGEN AND ALUMINUM IMPLANTATION IN HIGH-RESISTIVITY SILICON-CARBIDE, Journal of applied physics, 82(11), 1997, pp. 5327-5333

PHOSPHORUS AND BORON IMPLANTATION IN 6H-SIC

Authors: RAO MV GARDNER JA CHI PH HOLLAND OW KELNER G KRETCHMER J GHEZZO M

Citation: Mv. Rao et al., PHOSPHORUS AND BORON IMPLANTATION IN 6H-SIC, Journal of applied physics, 81(10), 1997, pp. 6635-6641

ELEVATED-TEMPERATURE NITROGEN IMPLANTS IN 6H-SIC

Authors: GARDNER J RAO MV HOLLAND OW KELNER G SIMONS DS CHI PH ANDREWS JM KRETCHMER J GHEZZO M

Citation: J. Gardner et al., ELEVATED-TEMPERATURE NITROGEN IMPLANTS IN 6H-SIC, Journal of electronic materials, 25(5), 1996, pp. 885-892

AL, AL C AND AL SI IMPLANTATIONS IN 6H-SIC

Authors: RAO MV GRIFFITHS P GARDNER J HOLLAND OW GHEZZO M KRETCHMER J KELNER G FREITAS JA

Citation: Mv. Rao et al., AL, AL C AND AL SI IMPLANTATIONS IN 6H-SIC, Journal of electronic materials, 25(1), 1996, pp. 75-80

SILICON-CARBIDE MOSFET TECHNOLOGY

Authors: BROWN DM DOWNEY E GHEZZO M KRETCHMER J KRISHNAMURTHY V HENNESSY W MICHON G

Citation: Dm. Brown et al., SILICON-CARBIDE MOSFET TECHNOLOGY, Solid-state electronics, 39(11), 1996, pp. 1531-1542

AL AND B ION-IMPLANTATIONS IN 6H-SIC AND 3C-SIC

Authors: RAO MV GRIFFITHS P HOLLAND OW KELNER G FREITAS JA SIMONS DS CHI PH GHEZZO M

Citation: Mv. Rao et al., AL AND B ION-IMPLANTATIONS IN 6H-SIC AND 3C-SIC, Journal of applied physics, 77(6), 1995, pp. 2479-2485

SIC MOS INTERFACE CHARACTERISTICS

Authors: BROWN DM GHEZZO M KRETCHMER J DOWNEY E PIMBLEY J PALMOUR J

Citation: Dm. Brown et al., SIC MOS INTERFACE CHARACTERISTICS, I.E.E.E. transactions on electron devices, 41(4), 1994, pp. 618-620

AN ISOPLANAR ISOLATION TECHNOLOGY FOR SIC DEVICES USING LOCAL OXIDATION

Authors: TYAGI R GHEZZO M CHOW TP NORTON JF

Citation: R. Tyagi et al., AN ISOPLANAR ISOLATION TECHNOLOGY FOR SIC DEVICES USING LOCAL OXIDATION, Journal of the Electrochemical Society, 141(8), 1994, pp. 2188-2191

BORON-IMPLANTED 6H-SIC DIODES

Authors: GHEZZO M BROWN DM DOWNEY E KRETCHMER J KOPANSKI JJ

Citation: M. Ghezzo et al., BORON-IMPLANTED 6H-SIC DIODES, Applied physics letters, 63(9), 1993, pp. 1206-1208

Risultati: 1-12 |