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Results: 51-75/94
Authors:
MOUNIB A
GHIBAUDO G
BALESTRA F
POGANY D
CHANTRE A
CHROBOCZEK J
Citation: A. Mounib et al., LOW-FREQUENCY (1 F) NOISE MODEL FOR THE BASE CURRENT IN POLYSILICON EMITTER BIPOLAR JUNCTION TRANSISTORS/, Journal of applied physics, 79(6), 1996, pp. 3330-3336
Authors:
VOGEL EM
HILL WL
MISRA V
MCLARTY PK
WORTMAN JJ
HAUSER JR
MORFOULI P
GHIBAUDO G
OUISSE T
Citation: Em. Vogel et al., MOBILITY BEHAVIOR OF N-CHANNEL AND P-CHANNEL MOSFETS WITH OXYNITRIDE GATE DIELECTRICS FORMED BY LOW-PRESSURE RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION, I.E.E.E. transactions on electron devices, 43(5), 1996, pp. 753-758
Authors:
JOMAAH J
GHIBAUDO G
BALESTRA F
Citation: J. Jomaah et al., BAND-TO-BAND TUNNELING MODEL OF GATE INDUCED DRAIN LEAKAGE CURRENT INSILICON MOS-TRANSISTORS, Electronics Letters, 32(8), 1996, pp. 767-769
Authors:
POGANY D
CHANTRE A
CHROBOCZEK JA
GHIBAUDO G
Citation: D. Pogany et al., ORIGIN OF LARGE-AMPLITUDE RANDOM TELEGRAPH SIGNAL IN SILICON BIPOLAR JUNCTION TRANSISTORS AFTER HOT-CARRIER DEGRADATION, Applied physics letters, 68(4), 1996, pp. 541-543
Authors:
KIES R
EGILSSON T
GHIBAUDO G
PANANAKAKIS G
Citation: R. Kies et al., A METHOD FOR THE ASSESSMENT OF OXIDE CHARGE-DENSITY AND CENTROID IN METAL-OXIDE-SEMICONDUCTOR STRUCTURES AFTER UNIFORM GATE STRESS, Applied physics letters, 68(26), 1996, pp. 3790-3792
Authors:
KIES R
GHIBAUDO G
PANANAKAKIS G
ROUXDITBUISSON O
REIMBOLD G
Citation: R. Kies et al., TEMPERATURE-DEPENDENCE OF THE OXIDE-NITRIDE-OXIDE INTERPOLY DIELECTRICS, Microelectronic engineering, 28(1-4), 1995, pp. 309-312
Authors:
BAUZA D
GHIBAUDO G
Citation: D. Bauza et G. Ghibaudo, RESPECTIVE CONTRIBUTIONS OF THE FAST AND SLOW TRAPS TO CHARGE-PUMPINGMEASUREMENTS, Microelectronic engineering, 28(1-4), 1995, pp. 325-328
Authors:
PAPADAS C
REVIL N
GHIBAUDO G
VINCENT E
Citation: C. Papadas et al., ON THE THRESHOLD VOLTAGE SHIFT AFTER HOT-CARRIER INJECTION IN DEEP-SUBMICRON N-CHANNEL MOSFFTS - A QUASI UNIFORM APPROACH, Microelectronic engineering, 28(1-4), 1995, pp. 361-364
Authors:
JOMAAH J
GHIBAUDO G
BALESTRA F
Citation: J. Jomaah et al., ANALYSIS AND MODELING OF SELF-HEATING EFFECTS IN THIN-FILM SOI MOSFETS AS A FUNCTION OF TEMPERATURE, Solid-state electronics, 38(3), 1995, pp. 615-618
Authors:
HAFEZ IM
GHIBAUDO G
BALESTRA F
HAOND M
Citation: Im. Hafez et al., IMPACT OF LDD STRUCTURES ON THE OPERATION OF SILICON MOSFETS AT LOW-TEMPERATURE, Solid-state electronics, 38(2), 1995, pp. 419-424
Authors:
PANANAKAKIS G
GHIBAUDO G
KIES R
PAPADAS C
Citation: G. Pananakakis et al., TEMPERATURE-DEPENDENCE OF THE FOWLER-NORDHEIM CURRENT IN METAL-OXIDE-DEGENERATE SEMICONDUCTOR STRUCTURES, Journal of applied physics, 78(4), 1995, pp. 2635-2641
Authors:
MOUNIB A
BALESTRA F
MATHIEU N
BRINI J
GHIBAUDO G
CHOVET A
CHANTRE A
NOUAILHAT A
Citation: A. Mounib et al., LOW-FREQUENCY NOISE SOURCES IN POLYSILICON EMITTER BJTS - INFLUENCE OF HOT-ELECTRON-INDUCED DEGRADATION AND POSTSTRESS RECOVERY, I.E.E.E. transactions on electron devices, 42(9), 1995, pp. 1647-1652
Authors:
PAPADAS C
PANANAKAKIS G
GHIBAUDO G
RIVA C
PIO F
GHEZZI P
Citation: C. Papadas et al., MODELING OF THE INTRINSIC RETENTION CHARACTERISTICS OF FLOTOX EEPROM CELLS UNDER ELEVATED-TEMPERATURE CONDITIONS, I.E.E.E. transactions on electron devices, 42(4), 1995, pp. 678-682
Authors:
FIKRY W
GHIBAUDO G
HADDARA H
CRISTOLOVEANU S
DUTOIT M
Citation: W. Fikry et al., METHOD FOR EXTRACTING DEEP-SUBMICROMETER MOSFET PARAMETERS, Electronics Letters, 31(9), 1995, pp. 762-764
Authors:
BRUT H
JUGE A
GHIBAUDO G
Citation: H. Brut et al., PHYSICAL MODEL OF THRESHOLD VOLTAGE IN SILICON MOS-TRANSISTORS INCLUDING REVERSE SHORT-CHANNEL EFFECT, Electronics Letters, 31(5), 1995, pp. 411-412
Authors:
RAIS K
GHIBAUDO G
BALESTRA F
DUTOIT M
Citation: K. Rais et al., STUDY OF SATURATION VELOCITY OVERSHOOT IN DEEP-SUBMICRON SILICON MOSFETS FROM LIQUID-HELIUM UP TO ROOM-TEMPERATURE, Journal de physique. IV, 4(C6), 1994, pp. 19-24
Authors:
JOMAAH J
GHIBAUDO G
BALESTRA F
Citation: J. Jomaah et al., MODELING OF SELF-HEATING EFFECTS IN THIN-FILM SOI MOSFETS AS A FUNCTION OF TEMPERATURE, Journal de physique. IV, 4(C6), 1994, pp. 57-62
Authors:
BALESTRA F
GHIBAUDO G
Citation: F. Balestra et G. Ghibaudo, WOLTE-1 - PROCEEDINGS OF THE 1ST EUROPEAN WORKSHOP ON LOW-TEMPERATUREELECTRONICS, 29 JUNE - 1ST JULY, 1994, GRENOBLE, FRANCE - FOREWORD, Journal de physique. IV, 4(C6), 1994, pp. 180000003-180000003
Authors:
PAPADAS C
GHIBAUDO G
PIO F
MONSERIE C
PANANAKAKIS G
MORTINI P
RIVA C
Citation: C. Papadas et al., ON THE CHARGE BUILDUP MECHANISMS IN GATE DIELECTRICS, Solid-state electronics, 37(3), 1994, pp. 495-505
Authors:
BALESTRA F
GHIBAUDO G
Citation: F. Balestra et G. Ghibaudo, BRIEF REVIEW OF THE MOS DEVICE PHYSICS FOR LOW-TEMPERATURE ELECTRONICS, Solid-state electronics, 37(12), 1994, pp. 1967-1975
Authors:
EMRANI A
BALESTRA F
GHIBAUDO G
Citation: A. Emrani et al., ON THE UNDERSTANDING OF ELECTRON AND HOLE MOBILITY MODELS FROM ROOM TO LIQUID-HELIUM TEMPERATURES, Solid-state electronics, 37(10), 1994, pp. 1723-1730
Authors:
EMRANI A
GHIBAUDO G
BALESTRA F
Citation: A. Emrani et al., ON THE UNIVERSAL ELECTRIC-FIELD DEPENDENCE OF THE ELECTRON AND HOLE EFFECTIVE MOBILITY IN MOS INVERSION-LAYERS, Solid-state electronics, 37(1), 1994, pp. 111-113
Authors:
RAIS K
GHIBAUDO G
BALESTRA F
Citation: K. Rais et al., SURFACE-ROUGHNESS MOBILITY MODEL FOR SILICON MOS-TRANSISTORS, Physica status solidi. a, Applied research, 146(2), 1994, pp. 853-858
Authors:
RAIS K
BALESTRA F
GHIBAUDO G
Citation: K. Rais et al., ON THE HIGH-ELECTRIC-FIELD MOBILITY BEHAVIOR IN SI MOSFETS FROM ROOM TO LIQUID-HELIUM TEMPERATURE, Physica status solidi. a, Applied research, 145(1), 1994, pp. 217-221
Authors:
JOMAAH J
BALESTRA F
GHIBAUDO G
Citation: J. Jomaah et al., EXPERIMENTAL INVESTIGATION AND NUMERICAL-SIMULATION OF LOW-FREQUENCY NOISE IN THIN-FILM SOI MOSFETS, Physica status solidi. a, Applied research, 142(2), 1994, pp. 533-537