Authors:
GHISLOTTI G
MASSERONI C
ZAPPETTINI A
MARTINELLI M
MYCIELSKI A
Citation: G. Ghislotti et al., ROOM-TEMPERATURE PHOTOINDUCED FARADAY-ROTATION IN HG1-XMNXTE ALLOYS AT 1550 NM, Applied physics letters, 72(26), 1998, pp. 3417-3419
Authors:
GHISLOTTI G
NIELSEN B
ASOKAKUMAR P
LYNN KG
DIMAURO LF
BOTTANI CE
CORNI F
TONINI R
OTTAVIANI GP
Citation: G. Ghislotti et al., VISIBLE-LIGHT EMISSION FROM SILICON IMPLANTED AND ANNEALED SIO2 LAYERS, Journal of the Electrochemical Society, 144(6), 1997, pp. 2196-2199
Authors:
GHISLOTTI G
NIELSEN B
ASOKAKUMAR P
LYNN KG
DIMAURO LF
COMI F
TONINI R
Citation: G. Ghislotti et al., POSITRON-ANNIHILATION STUDIES OF SILICON-RICH SIO2 PRODUCED BY HIGH-DOSE ION-IMPLANTATION, Applied physics letters, 70(4), 1997, pp. 496-498
Authors:
GHISLOTTI G
GAGLIARDI A
BOTTANI CE
BERTONI S
CEROFOLINI GF
MEDA L
Citation: G. Ghislotti et al., CHARACTERIZATION OF SOI-SIMOX STRUCTURES USING BRILLOUIN LIGHT-SCATTERING, Materials science & engineering. B, Solid-state materials for advanced technology, 36(1-3), 1996, pp. 129-132
Citation: R. Caporali et al., SURFACE BRILLOUIN-SCATTERING SPECTROSCOPY OF MEDIA WITH NONUNIFORM ACOUSTOOPTIC PROPERTIES, Physical review. B, Condensed matter, 53(7), 1996, pp. 4133-4141
Authors:
MUTTI P
GHISLOTTI G
MEDA L
GRILLI E
GUZZI M
ZANGHIERI L
CUBEDDU R
PIFFERI A
TARONI P
TORRICELLI A
Citation: P. Mutti et al., PHOTOLUMINESCENCE STUDIES OF LIGHT-EMISSION FROM SILICON IMPLANTED AND ANNEALED SIO2 LAYERS, Thin solid films, 276(1-2), 1996, pp. 88-91
Authors:
GHISLOTTI G
NIELSEN B
ASOKAKUMAR P
LYNN KG
SZELES C
BOTTANI CE
BERTONI S
CEROFOLINI GF
MEDA L
Citation: G. Ghislotti et al., CHARACTERIZATION OF SILICON-IMPLANTED SIO2 LAYERS USING POSITRON-ANNIHILATION SPECTROSCOPY, Thin solid films, 276(1-2), 1996, pp. 310-313
Authors:
GHISLOTTI G
NIELSEN B
ASOKAKUMAR P
LYNN KG
GAMBHIR A
DIMAURO LF
BOTTANI CE
Citation: G. Ghislotti et al., EFFECT OF DIFFERENT PREPARATION CONDITIONS ON LIGHT-EMISSION FROM SILICON IMPLANTED SIO2 LAYERS, Journal of applied physics, 79(11), 1996, pp. 8660-8663
Authors:
LI Z
GHISLOTTI G
KRANER HW
LI CJ
NIELSEN B
FEICK H
LINDSTROEM G
Citation: Z. Li et al., MICROSCOPIC ANALYSIS OF DEFECTS IN A HIGH-RESISTIVITY SILICON DETECTOR IRRADIATED TO 1.7X10(15)N CM(2)/, IEEE transactions on nuclear science, 43(3), 1996, pp. 1590-1598
Authors:
GHISLOTTI G
BOTTANI CE
MUTTI P
BYLOOS C
GIOVANNINI L
NIZZOLI F
Citation: G. Ghislotti et al., LIGHT-SCATTERING STUDY OF THE LOCALIZATION OF LONGITUDINAL ACOUSTIC PSEUDOMODES IN A BURIED SILICA LAYER, Physical review. B, Condensed matter, 51(15), 1995, pp. 9875-9880
Authors:
MUTTI P
GHISLOTTI G
BERTONI S
BONOLDI L
CEROFOLINI GF
MEDA L
GRILLI E
GUZZI M
Citation: P. Mutti et al., ROOM-TEMPERATURE VISIBLE LUMINESCENCE FROM SILICON NANOCRYSTALS IN SILICON IMPLANTED SIO2 LAYERS, Applied physics letters, 66(7), 1995, pp. 851-853
Citation: Ce. Bottani et al., BRILLOUIN-SCATTERING FROM SHEAR HORIZONTAL SURFACE PHONONS IN BURIED SIO2 LAYERS, Journal of physics. Condensed matter, 6(6), 1994, pp. 85-91
Authors:
ALEKSANDROV VV
BOTTANI CE
CAGLIOTI G
GHISLOTTI G
MARINONI C
MUTTI P
YAKOVLEV NL
SOKOLOV NS
Citation: Vv. Aleksandrov et al., EXPERIMENTAL-EVIDENCE OF THE TRANSFORMATION OF THE RAYLEIGH SURFACE PHONON IN CAF2 GAAS(111) HETEROSTRUCTURES OF THE ACCELERATING TYPE/, Journal of physics. Condensed matter, 6(10), 1994, pp. 1947-1954
Authors:
NIZZOLI F
BYLOOS C
GIOVANNINI L
BOTTANI CE
GHISLOTTI G
MUTTI P
Citation: F. Nizzoli et al., LOCALIZATION OF THE SURFACE ACOUSTIC LONGITUDINAL PSEUDOMODE OF SILICON IN A BURIED SIO2 LAYER, Physical review. B, Condensed matter, 50(3), 1994, pp. 2027-2030
Citation: G. Ghislotti et Ce. Bottani, BRILLOUIN-SCATTERING FROM SHEAR HORIZONTAL SURFACE PHONONS IN SILICON-ON-INSULATOR STRUCTURES - THEORY AND EXPERIMENT, Physical review. B, Condensed matter, 50(16), 1994, pp. 12131-12137