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Results: 1-25/29
Authors:
GIAPIS KP
HWANG GS
Citation: Kp. Giapis et Gs. Hwang, PATTERN-DEPENDENT CHARGING AND THE ROLE OF ELECTRON-TUNNELING, JPN J A P 1, 37(4B), 1998, pp. 2281-2290
Authors:
HWANG GS
GIAPIS KP
Citation: Gs. Hwang et Kp. Giapis, MECHANISM OF CHARGING REDUCTION IN PULSED PLASMA-ETCHING, JPN J A P 1, 37(4B), 1998, pp. 2291-2301
Authors:
HWANG GS
GIAPIS KP
Citation: Gs. Hwang et Kp. Giapis, THE INFLUENCE OF SURFACE CURRENTS ON PATTERN-DEPENDENT CHARGING AND NOTCHING, Journal of applied physics, 84(2), 1998, pp. 683-689
Authors:
HWANG GS
GIAPIS KP
Citation: Gs. Hwang et Kp. Giapis, MODELING OF CHARGING DAMAGE DURING INTERLEVEL OXIDE DEPOSITION IN HIGH-DENSITY PLASMAS, Journal of applied physics, 84(1), 1998, pp. 154-160
Authors:
MINTON TK
GIAPIS KP
MOORE T
Citation: Tk. Minton et al., INELASTIC-SCATTERING DYNAMICS OF HYPERTHERMAL FLUORINE-ATOMS ON A FLUORINATED SILICON SURFACE, The journal of physical chemistry. A, Molecules, spectroscopy, kinetics, environment, & general theory, 101(36), 1997, pp. 6549-6555
Authors:
HWANG GS
GIAPIS KP
Citation: Gs. Hwang et Kp. Giapis, ELECTRON IRRADIANCE OF CONDUCTIVE SIDEWALLS - A DETERMINING FACTOR FOR PATTERN-DEPENDENT CHARGING, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(5), 1997, pp. 1741-1746
Authors:
HWANG GS
GIAPIS KP
Citation: Gs. Hwang et Kp. Giapis, ON THE LINK BETWEEN ELECTRON SHADOWING AND CHARGING DAMAGE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(5), 1997, pp. 1839-1842
Authors:
HWANG GS
GIAPIS KP
Citation: Gs. Hwang et Kp. Giapis, ON THE ORIGIN OF THE NOTCHING EFFECT DURING ETCHING IN UNIFORM HIGH-DENSITY PLASMAS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(1), 1997, pp. 70-87
Authors:
ANDERSON CM
GIAPIS KP
Citation: Cm. Anderson et Kp. Giapis, SYMMETRY REDUCTION IN GROUP 4MM PHOTONIC CRYSTALS, Physical review. B, Condensed matter, 56(12), 1997, pp. 7313-7320
Authors:
HWANG GS
GIAPIS KP
Citation: Gs. Hwang et Kp. Giapis, PATTERN-DEPENDENT CHARGING IN PLASMAS - ELECTRON-TEMPERATURE EFFECTS, Physical review letters, 79(5), 1997, pp. 845-848
Authors:
HWANG GS
GIAPIS KP
Citation: Gs. Hwang et Kp. Giapis, ASPECT-RATIO-DEPENDENT CHARGING IN HIGH-DENSITY PLASMAS, Journal of applied physics, 82(2), 1997, pp. 566-571
Authors:
HWANG GS
GIAPIS KP
Citation: Gs. Hwang et Kp. Giapis, THE INFLUENCE OF MASK THICKNESS ON CHARGING DAMAGE DURING OVERETCHING, Journal of applied physics, 82(2), 1997, pp. 572-577
Authors:
HWANG GS
GIAPIS KP
Citation: Gs. Hwang et Kp. Giapis, THE INFLUENCE OF ELECTRON-TEMPERATURE ON PATTERN-DEPENDENT CHARGING DURING ETCHING IN HIGH-DENSITY PLASMAS, Journal of applied physics, 81(8), 1997, pp. 3433-3439
Authors:
HWANG GS
GIAPIS KP
Citation: Gs. Hwang et Kp. Giapis, THE ROLE OF THE SUBSTRATE ON PATTERN-DEPENDENT CHARGING, Journal of the Electrochemical Society, 144(12), 1997, pp. 320-322
Authors:
HWANG GS
GIAPIS KP
Citation: Gs. Hwang et Kp. Giapis, ON THE ORIGIN OF CHARGING DAMAGE DURING ETCHING OF ANTENNA STRUCTURES, Journal of the Electrochemical Society, 144(10), 1997, pp. 285-287
Authors:
HWANG GS
GIAPIS KP
Citation: Gs. Hwang et Kp. Giapis, ASPECT RATIO INDEPENDENT ETCHING OF DIELECTRICS, Applied physics letters, 71(4), 1997, pp. 458-460
Authors:
HWANG GS
GIAPIS KP
Citation: Gs. Hwang et Kp. Giapis, HOW TUNNELING CURRENTS REDUCE PLASMA-INDUCED CHARGING, Applied physics letters, 71(20), 1997, pp. 2928-2930
Authors:
HWANG GS
GIAPIS KP
Citation: Gs. Hwang et Kp. Giapis, ION MASS EFFECT IN PLASMA-INDUCED CHARGING, Applied physics letters, 71(14), 1997, pp. 1942-1944
Authors:
HWANG GS
GIAPIS KP
Citation: Gs. Hwang et Kp. Giapis, SIMULATION OF CURRENT TRANSIENTS THROUGH ULTRATHIN GATE OXIDES DURINGPLASMA-ETCHING, Applied physics letters, 71(14), 1997, pp. 1945-1947
Authors:
HWANG GS
GIAPIS KP
Citation: Gs. Hwang et Kp. Giapis, PREDICTION OF MULTIPLE-FEATURE EFFECTS IN PLASMA-ETCHING, Applied physics letters, 70(18), 1997, pp. 2377-2379
Authors:
ANDERSON CM
GIAPIS KP
Citation: Cm. Anderson et Kp. Giapis, LARGER 2-DIMENSIONAL PHOTONIC BAND-GAPS, Physical review letters, 77(14), 1996, pp. 2949-2952
Authors:
HWANG GS
ANDERSON CM
GORDON MJ
MOORE TA
MINTON TK
GIAPIS KP
Citation: Gs. Hwang et al., GAS-SURFACE DYNAMICS AND PROFILE EVOLUTION DURING ETCHING OF SILICON, Physical review letters, 77(14), 1996, pp. 3049-3052
Authors:
DIMOULAS A
DAVIDOW J
GIAPIS KP
GEORGAKILAS A
HALKIAS G
KORNELIOS N
Citation: A. Dimoulas et al., ELECTRON-DENSITY EFFECTS IN THE MODULATION SPECTROSCOPY OF STRAINED AND LATTICE-MATCHED INGAAS INALAS/INP HIGH-ELECTRON-MOBILITY TRANSISTORSTRUCTURES/, Journal of applied physics, 80(6), 1996, pp. 3484-3487
Authors:
GIAPIS KP
MOORE TA
MINTON TK
Citation: Kp. Giapis et al., HYPERTHERMAL NEUTRAL BEAM ETCHING, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(3), 1995, pp. 959-965
Authors:
SKROMME BJ
LIU W
JENSEN KF
GIAPIS KP
Citation: Bj. Skromme et al., EFFECTS OF C INCORPORATION ON THE LUMINESCENCE PROPERTIES OF ZNSE GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Journal of crystal growth, 138(1-4), 1994, pp. 338-345