Citation: Gs. Hwang et Kp. Giapis, THE INFLUENCE OF SURFACE CURRENTS ON PATTERN-DEPENDENT CHARGING AND NOTCHING, Journal of applied physics, 84(2), 1998, pp. 683-689
Citation: Gs. Hwang et Kp. Giapis, MODELING OF CHARGING DAMAGE DURING INTERLEVEL OXIDE DEPOSITION IN HIGH-DENSITY PLASMAS, Journal of applied physics, 84(1), 1998, pp. 154-160
Citation: Tk. Minton et al., INELASTIC-SCATTERING DYNAMICS OF HYPERTHERMAL FLUORINE-ATOMS ON A FLUORINATED SILICON SURFACE, The journal of physical chemistry. A, Molecules, spectroscopy, kinetics, environment, & general theory, 101(36), 1997, pp. 6549-6555
Citation: Gs. Hwang et Kp. Giapis, ELECTRON IRRADIANCE OF CONDUCTIVE SIDEWALLS - A DETERMINING FACTOR FOR PATTERN-DEPENDENT CHARGING, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(5), 1997, pp. 1741-1746
Citation: Gs. Hwang et Kp. Giapis, ON THE LINK BETWEEN ELECTRON SHADOWING AND CHARGING DAMAGE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(5), 1997, pp. 1839-1842
Citation: Gs. Hwang et Kp. Giapis, ON THE ORIGIN OF THE NOTCHING EFFECT DURING ETCHING IN UNIFORM HIGH-DENSITY PLASMAS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(1), 1997, pp. 70-87
Citation: Cm. Anderson et Kp. Giapis, SYMMETRY REDUCTION IN GROUP 4MM PHOTONIC CRYSTALS, Physical review. B, Condensed matter, 56(12), 1997, pp. 7313-7320
Citation: Gs. Hwang et Kp. Giapis, PATTERN-DEPENDENT CHARGING IN PLASMAS - ELECTRON-TEMPERATURE EFFECTS, Physical review letters, 79(5), 1997, pp. 845-848
Citation: Gs. Hwang et Kp. Giapis, THE INFLUENCE OF MASK THICKNESS ON CHARGING DAMAGE DURING OVERETCHING, Journal of applied physics, 82(2), 1997, pp. 572-577
Citation: Gs. Hwang et Kp. Giapis, THE INFLUENCE OF ELECTRON-TEMPERATURE ON PATTERN-DEPENDENT CHARGING DURING ETCHING IN HIGH-DENSITY PLASMAS, Journal of applied physics, 81(8), 1997, pp. 3433-3439
Citation: Gs. Hwang et Kp. Giapis, THE ROLE OF THE SUBSTRATE ON PATTERN-DEPENDENT CHARGING, Journal of the Electrochemical Society, 144(12), 1997, pp. 320-322
Citation: Gs. Hwang et Kp. Giapis, ON THE ORIGIN OF CHARGING DAMAGE DURING ETCHING OF ANTENNA STRUCTURES, Journal of the Electrochemical Society, 144(10), 1997, pp. 285-287
Citation: Gs. Hwang et Kp. Giapis, SIMULATION OF CURRENT TRANSIENTS THROUGH ULTRATHIN GATE OXIDES DURINGPLASMA-ETCHING, Applied physics letters, 71(14), 1997, pp. 1945-1947
Authors:
DIMOULAS A
DAVIDOW J
GIAPIS KP
GEORGAKILAS A
HALKIAS G
KORNELIOS N
Citation: A. Dimoulas et al., ELECTRON-DENSITY EFFECTS IN THE MODULATION SPECTROSCOPY OF STRAINED AND LATTICE-MATCHED INGAAS INALAS/INP HIGH-ELECTRON-MOBILITY TRANSISTORSTRUCTURES/, Journal of applied physics, 80(6), 1996, pp. 3484-3487
Citation: Kp. Giapis et al., HYPERTHERMAL NEUTRAL BEAM ETCHING, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(3), 1995, pp. 959-965
Citation: Bj. Skromme et al., EFFECTS OF C INCORPORATION ON THE LUMINESCENCE PROPERTIES OF ZNSE GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Journal of crystal growth, 138(1-4), 1994, pp. 338-345