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Results: 1-25 | 26-28
Results: 1-25/28
RECONSTRUCTIONS OF GAN(0001) AND GAN(0001) SURFACES - GA-RICH METALLIC STRUCTURES
Authors: SMITH AR FEENSTRA RM GREVE DW SHIN MS SKOWRONSKI M NEUGEBAUER J NORTHRUP JE
Citation: Ar. Smith et al., RECONSTRUCTIONS OF GAN(0001) AND GAN(0001) SURFACES - GA-RICH METALLIC STRUCTURES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 2242-2249
SCANNING-TUNNELING-MICROSCOPY OF THE GAN(000(1)OVER-BAR) SURFACE
Authors: SMITH AR FEENSTRA RM GREVE DW NEUGEBAUER J NORTHRUP JE
Citation: Ar. Smith et al., SCANNING-TUNNELING-MICROSCOPY OF THE GAN(000(1)OVER-BAR) SURFACE, Applied physics A: Materials science & processing, 66, 1998, pp. 947-951
WURTZITE GAN SURFACE-STRUCTURES STUDIED BY SCANNING-TUNNELING-MICROSCOPY AND REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION
Authors: SMITH AR RAMACHANDRAN V FEENSTRA RM GREVE DW SHIN MS SKOWRONSKI M NEUGEBAUER J NORTHRUP JE
Citation: Ar. Smith et al., WURTZITE GAN SURFACE-STRUCTURES STUDIED BY SCANNING-TUNNELING-MICROSCOPY AND REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(3), 1998, pp. 1641-1645
PREPARATION OF ATOMICALLY FLAT SURFACES ON SILICON-CARBIDE USING HYDROGEN ETCHING
Authors: RAMACHANDRAN V BRADY MF SMITH AR FEENSTRA RM GREVE DW
Citation: V. Ramachandran et al., PREPARATION OF ATOMICALLY FLAT SURFACES ON SILICON-CARBIDE USING HYDROGEN ETCHING, Journal of electronic materials, 27(4), 1998, pp. 308-312
PROPERTIES OF SI DONORS AND PERSISTENT PHOTOCONDUCTIVITY IN ALGAN
Authors: POLYAKOV AY SMIRNOV NB GOVORKOV AV MILVIDSKII MG REDWING JM SHIN M SKOWRONSKI M GREVE DW WILSON RG
Citation: Ay. Polyakov et al., PROPERTIES OF SI DONORS AND PERSISTENT PHOTOCONDUCTIVITY IN ALGAN, Solid-state electronics, 42(4), 1998, pp. 627-635
SCANNING ELECTRON-MICROSCOPE STUDIES OF ALGAN FILMS GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY
Authors: POLYAKOV AY GOVORKOV AV SMIRNOV NB MILVIDSKII MG REDWING JM SHIN M SKOWRONSKI M GREVE DW
Citation: Ay. Polyakov et al., SCANNING ELECTRON-MICROSCOPE STUDIES OF ALGAN FILMS GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY, Solid-state electronics, 42(4), 1998, pp. 637-646
DEEP CENTERS AND THEIR SPATIAL-DISTRIBUTION IN UNDOPED GAN FILMS GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY
Authors: POLYAKOV AY SMIRNOV NB GOVORKOV AV SHIN M SKOWRONSKI M GREVE DW
Citation: Ay. Polyakov et al., DEEP CENTERS AND THEIR SPATIAL-DISTRIBUTION IN UNDOPED GAN FILMS GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY, Journal of applied physics, 84(2), 1998, pp. 870-876
DETERMINATION OF WURTZITE GAN LATTICE POLARITY BASED ON SURFACE RECONSTRUCTION
Authors: SMITH AR FEENSTRA RM GREVE DW SHIN MS SKOWRONSKI M NEUGEBAUER J NORTHRUP JE
Citation: Ar. Smith et al., DETERMINATION OF WURTZITE GAN LATTICE POLARITY BASED ON SURFACE RECONSTRUCTION, Applied physics letters, 72(17), 1998, pp. 2114-2116
NUCLEATION OF BORON-NITRIDE ON NI(100) SURFACES
Authors: DESROSIERS RM GREVE DW GELLMAN AJ
Citation: Rm. Desrosiers et al., NUCLEATION OF BORON-NITRIDE ON NI(100) SURFACES, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 84-88
REAL-TIME MULTIVARIABLE CONTROL OF PECVD SILICON-NITRIDE FILM PROPERTIES
Authors: KNIGHT TJ GREVE DW CHENG X KROGH BH
Citation: Tj. Knight et al., REAL-TIME MULTIVARIABLE CONTROL OF PECVD SILICON-NITRIDE FILM PROPERTIES, IEEE transactions on semiconductor manufacturing, 10(1), 1997, pp. 137-146
DECOMPOSITION OF B2H6 ON NI(100)
Authors: DESROSIERS RM GREVE DW GELLMAN AJ
Citation: Rm. Desrosiers et al., DECOMPOSITION OF B2H6 ON NI(100), Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(4), 1997, pp. 2181-2189
GROWTH OF GABN TERNARY SOLUTIONS BY ORGANOMETALLIC VAPOR-PHASE EPITAXY
Authors: POLYAKOV AY SHIN M SKOWRONSKI M GREVE DW WILSON RG GOVORKOV AV DESROSIERS RM
Citation: Ay. Polyakov et al., GROWTH OF GABN TERNARY SOLUTIONS BY ORGANOMETALLIC VAPOR-PHASE EPITAXY, Journal of electronic materials, 26(3), 1997, pp. 237-242
GESI INFRARED DETECTORS
Authors: STRONG R GREVE DW MISRA R WEEKS M PELLEGRINI P
Citation: R. Strong et al., GESI INFRARED DETECTORS, Thin solid films, 294(1-2), 1997, pp. 343-346
NUCLEATION OF BORON-NITRIDE THIN-FILMS ON NI(100)
Authors: DESROSIERS RM GREVE DW GELLMAN AJ
Citation: Rm. Desrosiers et al., NUCLEATION OF BORON-NITRIDE THIN-FILMS ON NI(100), Surface science, 382(1-3), 1997, pp. 35-48
ION-IMPLANTATION OF SI, MG AND C INTO AL0.12GA0.88N
Authors: POLYAKOV AY SHIN M SKOWRONSKI M WILSON RG GREVE DW PEARTON SJ
Citation: Ay. Polyakov et al., ION-IMPLANTATION OF SI, MG AND C INTO AL0.12GA0.88N, Solid-state electronics, 41(5), 1997, pp. 703-706
RECONSTRUCTIONS OF THE GAN(000(1)OVER-BAR) SURFACE
Authors: SMITH AR FEENSTRA RM GREVE DW NEUGEBAUER J NORTHRUP JE
Citation: Ar. Smith et al., RECONSTRUCTIONS OF THE GAN(000(1)OVER-BAR) SURFACE, Physical review letters, 79(20), 1997, pp. 3934-3937
GEXSI1-X INFRARED DETECTORS .1. ABSORPTION IN MULTIPLE-QUANTUM-WELL AND HETEROJUNCTION INTERNAL PHOTOEMISSION STRUCTURES
Authors: STRONG R MISRA R GREVE DW ZALM PC
Citation: R. Strong et al., GEXSI1-X INFRARED DETECTORS .1. ABSORPTION IN MULTIPLE-QUANTUM-WELL AND HETEROJUNCTION INTERNAL PHOTOEMISSION STRUCTURES, Journal of applied physics, 82(10), 1997, pp. 5191-5198
GEXSI1-X INFRARED DETECTORS .2. CARRIER ESCAPE PROBABILITY AND DETECTOR PERFORMANCE
Authors: STRONG R GREVE DW PELLEGRINI P WEEKS M
Citation: R. Strong et al., GEXSI1-X INFRARED DETECTORS .2. CARRIER ESCAPE PROBABILITY AND DETECTOR PERFORMANCE, Journal of applied physics, 82(10), 1997, pp. 5199-5205
GROWTH OF ALBN SOLID-SOLUTIONS BY ORGANOMETALLIC VAPOR-PHASE EPITAXY
Authors: POLYAKOV AY SHIN M QIAN W SKOWRONSKI M GREVE DW WILSON RG
Citation: Ay. Polyakov et al., GROWTH OF ALBN SOLID-SOLUTIONS BY ORGANOMETALLIC VAPOR-PHASE EPITAXY, Journal of applied physics, 81(4), 1997, pp. 1715-1719
THE EFFECTIVE USE OF GROUP-THERAPY IN MANAGED CARE - MACKENZIE,KR
Authors: GREVE DW
Citation: Dw. Greve, THE EFFECTIVE USE OF GROUP-THERAPY IN MANAGED CARE - MACKENZIE,KR, International journal of group psychotherapy, 47(2), 1997, pp. 251-252
ELECTRON-CYCLOTRON-RESONANCE PLASMA-ETCHING OF ALGAN IN CL-2 AR AND BCL3/AR PLASMAS/
Authors: VARTULI CB PEARTON SJ LEE JW POLYAKOV AY SHIN M GREVE DW SKRONOWSKI M SHUL RJ
Citation: Cb. Vartuli et al., ELECTRON-CYCLOTRON-RESONANCE PLASMA-ETCHING OF ALGAN IN CL-2 AR AND BCL3/AR PLASMAS/, Journal of the Electrochemical Society, 144(6), 1997, pp. 2146-2149
PROCESS-CONTROL BASED ON QUADRUPOLE MASS-SPECTROMETRY
Authors: GREVE DW KNIGHT TJ CHENG X KROGH BH GIBSON MA LABROSSE J
Citation: Dw. Greve et al., PROCESS-CONTROL BASED ON QUADRUPOLE MASS-SPECTROMETRY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(1), 1996, pp. 489-493
ON THE ORIGIN OF ELECTRICALLY ACTIVE DEFECTS IN ALGAN ALLOYS GROWN BYORGANOMETALLIC VAPOR-PHASE EPITAXY
Authors: POLYAKOV AY SHIN M FREITAS JA SKOWRONSKI M GREVE DW WILSON RG
Citation: Ay. Polyakov et al., ON THE ORIGIN OF ELECTRICALLY ACTIVE DEFECTS IN ALGAN ALLOYS GROWN BYORGANOMETALLIC VAPOR-PHASE EPITAXY, Journal of applied physics, 80(11), 1996, pp. 6349-6354
GROWTH OF EPITAXIAL GEXSI1-X FOR INFRARED DETECTORS BY UHV CVD/
Authors: VYAS S GREVE DW KNIGHT TJ STRONG RM MAHAJAN S
Citation: S. Vyas et al., GROWTH OF EPITAXIAL GEXSI1-X FOR INFRARED DETECTORS BY UHV CVD/, Vacuum, 46(8-10), 1995, pp. 1065-1069
INFRARED-ABSORPTION IN GEXSI1-X QUANTUM-WELLS
Authors: MISRA R GREVE DW SCHLESINGER TE
Citation: R. Misra et al., INFRARED-ABSORPTION IN GEXSI1-X QUANTUM-WELLS, Applied physics letters, 67(17), 1995, pp. 2548-2550
Risultati: 1-25 | 26-28