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Results:
1-16
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Results: 16
Authors:
ANIEL F
ZEROUNIAN N
GRUHLE A
MAHNER C
VERNET G
ADDE R
Citation: F. Aniel et al., TEMPERATURE-DEPENDENCE OF SIGE HBT STATIC AND DYNAMIC CHARACTERISTICS, Journal de physique. IV, 8(P3), 1998, pp. 81-86
Authors:
VANHAAREN B
REGIS M
LLOPIS O
ESCOTTE L
GRUHLE A
MAHNER C
PLANA R
GRAFFEUIL J
Citation: B. Vanhaaren et al., LOW-FREQUENCY NOISE PROPERTIES OF SIGE HBTS AND APPLICATION TO ULTRA-LOW PHASE-NOISE OSCILLATORS, IEEE transactions on microwave theory and techniques, 46(5), 1998, pp. 647-652
Authors:
GRUHLE A
SCHUPPEN A
Citation: A. Gruhle et A. Schuppen, RECENT ADVANCES WITH SIGE HETEROJUNCTION BIPOLAR-TRANSISTORS, Thin solid films, 294(1-2), 1997, pp. 246-249
Authors:
KONIG U
GLUCK M
GRUHLE A
HOCK G
KOHN E
BOZON B
NUERNBERGK D
OSTERMANN T
HAGELAUER R
Citation: U. Konig et al., DESIGN RULES FOR N-TYPE SIGE HETERO FETS, Solid-state electronics, 41(10), 1997, pp. 1541-1547
Authors:
GRUHLE A
MAHNER C
Citation: A. Gruhle et C. Mahner, LOW 1 F NOISE SIGE HBTS WITH APPLICATION TO LOW PHASE NOISE MICROWAVE-OSCILLATORS/, Electronics Letters, 33(24), 1997, pp. 2050-2052
Authors:
SCHUPPEN A
GRUHLE A
KIBBEL H
KONIG U
Citation: A. Schuppen et al., MESA AND PLANAR SIGE-HBTS ON MBE-WAFERS, Journal of materials science. Materials in electronics, 6(5), 1995, pp. 298-305
Authors:
PLANA R
ESCOTTE L
ROUX JP
GRAFFEUIL J
GRUHLE A
KIBBEL H
Citation: R. Plana et al., 1 F NOISE IN SELF-ALIGNED SI/SIGE HETEROJUNCTION BIPOLAR-TRANSISTOR/, IEEE electron device letters, 16(2), 1995, pp. 58-60
Authors:
LUY JF
STROHM KM
SASSE HE
SCHUPPEN A
BUECHLER J
WOLLITZER M
GRUHLE A
SCHAFFLER F
GUETTICH U
KLAASSEN A
Citation: Jf. Luy et al., SI SIGE MMICS, IEEE transactions on microwave theory and techniques, 43(4), 1995, pp. 705-714
Authors:
ESCOTTE L
ROUX JP
PLANA R
GRAFFEUIL J
GRUHLE A
Citation: L. Escotte et al., NOISE MODELING OF MICROWAVE HETEROJUNCTION BIPOLAR-TRANSISTORS, I.E.E.E. transactions on electron devices, 42(5), 1995, pp. 883-889
Authors:
KASPER E
KIBBEL H
HERZOG HJ
GRUHLE A
Citation: E. Kasper et al., GROWTH OF 100 GHZ SIGE-HETEROBIPOLAR TRANSISTOR (HBT) STRUCTURES, JPN J A P 1, 33(4B), 1994, pp. 2415-2418
Authors:
GRUHLE A
Citation: A. Gruhle, THE INFLUENCE OF EMITTER-BASE JUNCTION DESIGN ON COLLECTOR SATURATIONCURRENT, IDEALITY FACTOR, EARLY VOLTAGE, AND DEVICE SWITCHING SPEED OF SI SIGE HBTS/, I.E.E.E. transactions on electron devices, 41(2), 1994, pp. 198-203
Authors:
ERBEN U
GRUHLE A
SCHUPPEN A
KIBBEL H
KOENIG U
Citation: U. Erben et al., DYNAMIC CHARACTERIZATION OF SI SIGE POWER HBTS/, Electronics Letters, 30(6), 1994, pp. 525-527
Authors:
SCHUPPEN A
GRUHLE A
KIBBEL H
ERBEN U
KONIG U
Citation: A. Schuppen et al., SIGE-HBTS WITH HIGH F(T) AT MODERATE CURRENT DENSITIES, Electronics Letters, 30(14), 1994, pp. 1187-1188
Authors:
GRUHLE A
KIBBLE H
ERBEN U
KASPER E
Citation: A. Gruhle et al., IIA-2 BASE THICKNESS AND HIGH-FREQUENCY PERFORMANCE OF SIGE HBTS, I.E.E.E. transactions on electron devices, 40(11), 1993, pp. 2100-2100
Authors:
GRUHLE A
KIBBEL H
ERBEN U
KASPER E
Citation: A. Gruhle et al., 91 GHZ SIGE HBTS GROWN BY MBE, Electronics Letters, 29(4), 1993, pp. 415-417
Authors:
GRUHLE A
KIBBEL H
KONIG U
ERBEN U
KASPER E
Citation: A. Gruhle et al., MBE-GROWN SI SIGE HBTS WITH HIGH-BETA, FT, AND FMAX/, IEEE electron device letters, 13(4), 1992, pp. 206-208
Risultati:
1-16
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