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Results:
1-15
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Results: 15
Authors:
DJAFARIROUHANI M
IDRISSISABA H
GUE AM
ESTEVE A
ESTEVE D
Citation: M. Djafarirouhani et al., ATOMIC-SCALE SIMULATION OF POINT-DEFECTS DIFFUSION AND REACTIONS USING TRANSPUTERS, JPN J A P 1, 37(5A), 1998, pp. 2703-2707
Authors:
ASTIE S
GUE AM
SCHEID E
LESCOUZERES L
CASSAGNES A
Citation: S. Astie et al., OPTIMIZATION OF AN INTEGRATED SNO2 GAS SENSOR USING A FEM SIMULATOR, Sensors and actuators. A, Physical, 69(3), 1998, pp. 205-211
Authors:
ROUHANI MD
MALEK R
GUE AM
BOUYSSOU G
ESTEVE D
Citation: Md. Rouhani et al., MONTE-CARLO SIMULATION OF THE EFFECT OF INTERSTITIAL ATOMS INTERACTION ON THE HETEROEPITAXIAL GROWTH OF COMPOUND SEMICONDUCTORS, Materials science & engineering. B, Solid-state materials for advanced technology, 44(1-3), 1997, pp. 82-86
Authors:
ROUHANI MD
GUE AM
MALEK R
BOUYSSOU G
ESTEVE D
Citation: Md. Rouhani et al., SURFACE-MORPHOLOGY DUE TO ENHANCED MIGRATION IN HETEROEPITAXIAL GROWTH OF COMPOUND SEMICONDUCTORS, Materials science & engineering. B, Solid-state materials for advanced technology, 37(1-3), 1996, pp. 25-29
Authors:
FAZOUAN N
ROUHANI MD
GUE AM
ESTEVE D
Citation: N. Fazouan et al., SIMULATION OF PHOTOEMISSION CURRENT TO MONITOR THE THIN-FILM GROWTH, Surface science, 352, 1996, pp. 1022-1026
Authors:
DILHAN M
ESTEVE D
GUE AM
MAUVAIS O
MERCIER L
Citation: M. Dilhan et al., ELECTROCHEMICAL OXYGEN MICROSENSORS, Sensors and actuators. B, Chemical, 27(1-3), 1995, pp. 401-403
Authors:
TALIERCIO T
DILHAN M
MASSONE E
FOUCARAN A
GUE AM
BRETAGNON T
FRAISSE B
MONTES L
Citation: T. Taliercio et al., POROUS SILICON MEMBRANES FOR GAS-SENSOR APPLICATIONS, Sensors and actuators. A, Physical, 46(1-3), 1995, pp. 43-46
Authors:
MAURY F
BOUABID K
FAZOUAN N
GUE AM
ESTEVE D
Citation: F. Maury et al., GAAS GROWTH BY PHOTON-ASSISTED METALORGANIC MOLECULAR-BEAM EPITAXY USING ETHYL DERIVATIVES OF GALLIUM AND ARSENIC, Applied surface science, 86(1-4), 1995, pp. 447-452
Authors:
ROUHANI MD
FAZOUAN N
GUE AM
ESTEVE D
Citation: Md. Rouhani et al., SIMULATION OF THIN-FILM GROWTH AND IN-SITU CHARACTERIZATION BY RHEED AND PHOTOEMISSION, Vacuum, 46(8-10), 1995, pp. 931-934
Authors:
TALIERCIO T
DILHAN M
MASSONE E
GUE AM
FRAISSE B
FOUCARAN A
Citation: T. Taliercio et al., REALIZATION OF POROUS SILICON MEMBRANES FOR GAS SENSOR APPLICATIONS, Thin solid films, 255(1-2), 1995, pp. 310-312
Authors:
ROUHANI MD
GUE AM
IDRISSISABA H
ESTEVE D
Citation: Md. Rouhani et al., ATOMIC-SCALE SIMULATION OF DISLOCATION LO OP FORMATION UNDER IRRADIATION, Journal de physique. I, 4(3), 1994, pp. 453-466
Authors:
ROUHANI MD
SAHLAOUI M
GUE AM
ESTEVE D
Citation: Md. Rouhani et al., ROUGHENING AND FACETING IN LATTICE-MISMATCHED HETEROEPITAXIAL GROWTH OF COMPOUND SEMICONDUCTORS - A MONTE-CARLO STUDY, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 200-203
Authors:
ROUHANI MD
GUE AM
CAMON H
COHENSOLAL G
Citation: Md. Rouhani et al., ATOMIC-SCALE SIMULATION OF MICROTECHNOLOG IES, Onde electrique, 74(2), 1994, pp. 14-20
Authors:
ROUHANI MD
SAHLAOUI M
GUE AM
ESTEVE D
Citation: Md. Rouhani et al., ATOMIC-SCALE SIMULATION OF LATTICE-MISMATCHED HETEROSTRUCTURES - CASEOF CDTE GAAS/, Materials science & engineering. B, Solid-state materials for advanced technology, 20(1-2), 1993, pp. 88-90
Authors:
ROUHANI MD
GUE AM
SAHLAOUI M
ESTEVE D
Citation: Md. Rouhani et al., ATOMIC-SCALE SIMULATION OF INTERFACE DEFECT FORMATION IN THE INITIAL-STAGES OF THIN-FILM GROWTH, Thin solid films, 228(1-2), 1993, pp. 326-329
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1-15
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