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Results: 1-9 |
Results: 9
Study of the structural perfection and distribution/redistribution of silicon in epitaxial GaAs films grown by molecular beam epitaxy on (100), (111)A, and (111)B substrates
Authors: Galiev, GB Mokerov, VG Saraikin, VV Slepnev, YV Shagimuratov, GI Imamov, RM Pashaev, EM
Citation: Gb. Galiev et al., Study of the structural perfection and distribution/redistribution of silicon in epitaxial GaAs films grown by molecular beam epitaxy on (100), (111)A, and (111)B substrates, TECH PHYS, 46(4), 2001, pp. 411-416
A study of the electrical and optical properties of Si delta-doped GaAs layers grown by MBE on a (111)A GaAs surface misoriented toward the [2(1)over-bar(1)over-bar] direction
Authors: Galiev, GB Mokerov, VG Lyapin, ER Saraikin, VV Khabarov, YV
Citation: Gb. Galiev et al., A study of the electrical and optical properties of Si delta-doped GaAs layers grown by MBE on a (111)A GaAs surface misoriented toward the [2(1)over-bar(1)over-bar] direction, SEMICONDUCT, 35(4), 2001, pp. 409-414
The use of the amphoteric nature of impurity silicon atoms for obtaining planar p-n junctions on GaAs (111)A substrates by molecular beam epitaxy
Authors: Galiev, GB Kaminskii, VE Mokerov, VG Velikhovskii, LE
Citation: Gb. Galiev et al., The use of the amphoteric nature of impurity silicon atoms for obtaining planar p-n junctions on GaAs (111)A substrates by molecular beam epitaxy, SEMICONDUCT, 35(4), 2001, pp. 415-418
Effect of misorientation angle on the photoluminescence spectra of Si (delta)-doped GaAs (111)A layers grown by molecular beam epitaxy
Authors: Galiev, GB Mokerov, VG Khabarov, YV
Citation: Gb. Galiev et al., Effect of misorientation angle on the photoluminescence spectra of Si (delta)-doped GaAs (111)A layers grown by molecular beam epitaxy, DOKL PHYS, 46(2), 2001, pp. 88-91
Investigation of distribution and redistribution of silicon in thin doped gallium-arsenide layers grown by molecular beam epitaxy on substrates with (100), (111)Ga, and (111)As orientations
Authors: Galiev, GB Kaminskii, VE Mokerov, VG Nevolin, VK Saraikin, VV Slepnev, YV
Citation: Gb. Galiev et al., Investigation of distribution and redistribution of silicon in thin doped gallium-arsenide layers grown by molecular beam epitaxy on substrates with (100), (111)Ga, and (111)As orientations, SEMICONDUCT, 34(7), 2000, pp. 741-745
Properties of (111)A and (111)B GaAs molecular-beam epitaxy
Authors: Galiev, GB Mokerov, VG Volkov, VY Imamov, RM Slepnev, YV Khabarov, YV
Citation: Gb. Galiev et al., Properties of (111)A and (111)B GaAs molecular-beam epitaxy, J COMMUN T, 44(11), 1999, pp. 1256-1261
Properties and structure of GaAs films grown by molecular beam epitaxy on GaAs substrates with the (100), (111)A, and (111)B orientations
Authors: Galiev, GB Mokerov, VG Slepnev, YV Khabarov, YV Lomov, AA Imamov, RM
Citation: Gb. Galiev et al., Properties and structure of GaAs films grown by molecular beam epitaxy on GaAs substrates with the (100), (111)A, and (111)B orientations, TECH PHYS, 44(7), 1999, pp. 801-803
Photoluminescence investigations of amphoteric behavior of Si-dopant in GaAs
Authors: Galiev, GB Karachevtseva, MV Mokerov, VG Strakhov, VA Yaremenko, NG
Citation: Gb. Galiev et al., Photoluminescence investigations of amphoteric behavior of Si-dopant in GaAs, DOKL AKAD N, 367(5), 1999, pp. 613-616
Influence of crystal orientation of the growth surface due to molecular beam epitaxy on the optical properties of Si-doped GaAs layers
Authors: Mokerov, VG Galiev, GB Slepnev, YV Khabarov, YV
Citation: Vg. Mokerov et al., Influence of crystal orientation of the growth surface due to molecular beam epitaxy on the optical properties of Si-doped GaAs layers, SEMICONDUCT, 32(11), 1998, pp. 1175-1178
Risultati: 1-9 |