AAAAAA
Results:
1-14
|
Results: 14
Authors:
Daumiller, I
Theron, D
Gaquiere, C
Vescan, A
Dietrich, R
Wieszt, A
Leier, H
Vetury, R
Mishra, UK
Smorchkova, IP
Keller, S
Nguyen, NX
Nguyen, C
Kohn, E
Citation: I. Daumiller et al., Current instabilities in GaN-based devices, IEEE ELEC D, 22(2), 2001, pp. 62-64
Authors:
Boudrissa, M
Delos, E
Gaquiere, C
Rousseau, M
Cordier, Y
Theron, D
De Jaeger, JC
Citation: M. Boudrissa et al., Enhancement-mode Al0.66In0.34As/Ga0.67In0.33As metamorphic HEMT: Modeling and measurements, IEEE DEVICE, 48(6), 2001, pp. 1037-1044
Authors:
Boudart, B
Gaquiere, C
Guhel, Y
de Jaeger, JC
Poisson, MA
Citation: B. Boudart et al., Electrical effects of SiNx deposition on GaN MESFETs, ELECTR LETT, 37(8), 2001, pp. 527-528
Authors:
Hoel, V
Guhel, Y
Boudart, B
Gaquiere, C
De Jaeger, JC
Lahreche, H
Gibart, P
Citation: V. Hoel et al., Static measurements of GaN MESFETs on (111) Si substrates, ELECTR LETT, 37(17), 2001, pp. 1095-1096
Authors:
Gaquiere, C
Bue, F
Delemotte, P
Crosnier, Y
Carnez, B
Pons, D
Citation: C. Gaquiere et al., Effects on the linearity in Ka band of single or double-recessed PHEMT's, IEEE MICR G, 10(7), 2000, pp. 267-269
Authors:
Gaquiere, C
Trassaert, S
Boudart, B
Crosnier, Y
Citation: C. Gaquiere et al., High-power GaN MESFET on sapphire substrate, IEEE MICR G, 10(1), 2000, pp. 19-20
Authors:
Gaquiere, C
Boudart, B
Dhamelincourt, PA
Citation: C. Gaquiere et al., Spatial mapping of electroluminescence due to impact ionization in high electron mobility transistors, APPL SPECTR, 54(10), 2000, pp. 1423-1428
Authors:
Gaquiere, C
Lafont, JP
Crosnier, Y
Citation: C. Gaquiere et al., Pulsed bias pulsed RF characterization measurement system of FET at constant intrinsic voltages, MICROW OPT, 20(5), 1999, pp. 349-352
Authors:
Boudart, B
Gaquiere, C
Constant, M
Lorriaux, A
Lefebvre, N
Citation: B. Boudart et al., Raman characterization of SiNx deposition on undoped Ga0.47In0.53As material grown on InP substrate, J RAMAN SP, 30(8), 1999, pp. 715-719
Authors:
Gaquiere, C
Bollaert, S
Zaknoune, M
Cordier, Y
Theron, D
Crosnier, Y
Citation: C. Gaquiere et al., Influence on power performances at 60GHz of indium composition in metamorphic HEMTs, ELECTR LETT, 35(17), 1999, pp. 1489-1491
Authors:
Trassaert, S
Boudart, B
Gaquiere, C
Theron, D
Crosnier, Y
Huet, F
Poisson, MA
Citation: S. Trassaert et al., Trap effects studies in GaN MESFETs by pulsed measurements, ELECTR LETT, 35(16), 1999, pp. 1386-1388
Authors:
Gaquiere, C
Miraumont, P
Crosnier, Y
Citation: C. Gaquiere et al., Measurement technique for determining impact ionisation in HEMTs, ELECTR LETT, 35(14), 1999, pp. 1146-1147
Authors:
Boudart, B
Gaquiere, C
Trassaert, S
Constant, M
Lorriaux, A
Lefebvre, N
Citation: B. Boudart et al., Raman characterization of SiNx deposition on undoped Al0.48In0.52As and n(+) Ga0.47In0.53As layers for InP high electron mobility transistor applications, APPL PHYS L, 74(21), 1999, pp. 3221-3223
Authors:
Gaquiere, C
Bourcier, E
Piotrowicz, S
Crosnier, Y
Citation: C. Gaquiere et al., High power added efficiency at 35GHz on InP DH HEMTs, ELECTR LETT, 34(25), 1998, pp. 2438-2439
Risultati:
1-14
|