AAAAAA

   
Results: 1-13 |
Results: 13
Proton dosimetry measurements and calculations in electronic packages using optically stimulated luminescent films
Authors: Ranchoux, G Plattard, D Polge, G Dusseau, L Fesquet, J Gasiot, J Ecoffet, R
Citation: G. Ranchoux et al., Proton dosimetry measurements and calculations in electronic packages using optically stimulated luminescent films, IEEE NUCL S, 48(5), 2001, pp. 1731-1734
Prediction of the one-year thermal annealing of irradiated commercial devices based on experimental isochronal curves
Authors: Saigne, F Dusseau, L Fesquet, J Gasiot, J Ecoffet, R Schrimpf, RD Galloway, KF
Citation: F. Saigne et al., Prediction of the one-year thermal annealing of irradiated commercial devices based on experimental isochronal curves, IEEE NUCL S, 47(6), 2000, pp. 2244-2248
Experimental procedure to predict the competition between the degradation induced by irradiation and thermal annealing of oxide trapped charge in MOSFETs
Authors: Saigne, F Fesquet, J Gasiot, J Ecoffet, R Schrimpf, RD Galloway, KF
Citation: F. Saigne et al., Experimental procedure to predict the competition between the degradation induced by irradiation and thermal annealing of oxide trapped charge in MOSFETs, IEEE NUCL S, 47(6), 2000, pp. 2329-2333
An integrated sensor using Optically Stimulated Luminescence for in-flightdosimetry
Authors: Dusseau, L Plattard, D Vaille, JR Polge, G Ranchoux, G Saigne, F Fesquet, J Ecoffet, R Gasiot, J
Citation: L. Dusseau et al., An integrated sensor using Optically Stimulated Luminescence for in-flightdosimetry, IEEE NUCL S, 47(6), 2000, pp. 2412-2416
Study of basic mechanisms induced by an ionizing particle on simple structures
Authors: Hubert, G Palau, JM Roche, P Sagnes, B Gasiot, J Calvet, MC
Citation: G. Hubert et al., Study of basic mechanisms induced by an ionizing particle on simple structures, IEEE NUCL S, 47(3), 2000, pp. 519-526
Determination of key parameters for SEU occurrence using 3-D full cell SRAM simulations
Authors: Roche, P Palau, JM Bruguier, G Tavernier, C Ecoffet, R Gasiot, J
Citation: P. Roche et al., Determination of key parameters for SEU occurrence using 3-D full cell SRAM simulations, IEEE NUCL S, 46(6), 1999, pp. 1354-1362
Threshold LET for SEU induced by low energy ions
Authors: McNulty, PJ Roche, P Palau, JM Gasiot, J
Citation: Pj. Mcnulty et al., Threshold LET for SEU induced by low energy ions, IEEE NUCL S, 46(6), 1999, pp. 1370-1377
Cell design modifications to harden a N-channel power IGBT against Single Event Latchup
Authors: Lorfevre, E Sagnes, B Bruguier, G Palau, JM Gasiot, J Calvet, MC Ecoffet, R
Citation: E. Lorfevre et al., Cell design modifications to harden a N-channel power IGBT against Single Event Latchup, IEEE NUCL S, 46(6), 1999, pp. 1410-1414
Use of the radiation-induced charge neutralization mechanism to achieve annealing of 0.35 mu m SRAMs
Authors: Quittard, O Joffre, F Brisset, C Oudea, C Saigne, F Dusseau, L Fesquet, J Gasiot, J
Citation: O. Quittard et al., Use of the radiation-induced charge neutralization mechanism to achieve annealing of 0.35 mu m SRAMs, IEEE NUCL S, 46(6), 1999, pp. 1633-1639
High energy electron dose-mapping using optically stimulated luminescent films
Authors: Dusseau, L Ranchoux, G Polge, G Plattard, D Saigne, F Bessiere, JC Fesquet, J Gasiot, J
Citation: L. Dusseau et al., High energy electron dose-mapping using optically stimulated luminescent films, IEEE NUCL S, 46(6), 1999, pp. 1757-1761
SEU response of an entire SRAM cell simulated as one contiguous three dimensional device domain
Authors: Roche, P Palau, JM Belhaddad, K Bruguier, G Ecoffet, R Gasiot, J
Citation: P. Roche et al., SEU response of an entire SRAM cell simulated as one contiguous three dimensional device domain, IEEE NUCL S, 45(6), 1998, pp. 2534-2543
Irradiated integrated circuits dose-attenuation mapping using optically stimulated phosphors for packaging dosimetry
Authors: Dusseau, L Polge, G Albert, L Magnac, Y Bessiere, JC Fesquet, J Gasiot, J
Citation: L. Dusseau et al., Irradiated integrated circuits dose-attenuation mapping using optically stimulated phosphors for packaging dosimetry, IEEE NUCL S, 45(6), 1998, pp. 2695-2699
A new approach for the prediction of the neutron-induced SEU rate
Authors: Vial, C Palau, JM Gasiot, J Calvet, MC Fourtine, S
Citation: C. Vial et al., A new approach for the prediction of the neutron-induced SEU rate, IEEE NUCL S, 45(6), 1998, pp. 2915-2920
Risultati: 1-13 |