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Results:
1-12
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Results: 12
Authors:
Czerwinski, A
Katcki, J
Poyai, A
Simoen, E
Claeys, C
Ratajczak, J
Gaubas, E
Citation: A. Czerwinski et al., Statistical analysis of shallow p-n junction leakage increase using XTEM results probabilities, MAT SC S PR, 4(1-3), 2001, pp. 105-107
Authors:
Gaubas, E
Vaitkus, J
Simoen, E
Claeys, C
Vanhellemont, J
Citation: E. Gaubas et al., Excess carrier cross-sectional profiling technique for determination of the surface recombination velocity, MAT SC S PR, 4(1-3), 2001, pp. 125-131
Authors:
Simoen, E
Poyai, A
Claeys, C
Lukyanchikova, N
Petrichuk, M
Garbar, N
Czerwinski, A
Katcki, J
Ratajczak, J
Gaubas, E
Citation: E. Simoen et al., Electrical characterization of shallow cobalt-silicided junctions, J MAT S-M E, 12(4-6), 2001, pp. 207-210
Authors:
Vaitkus, J
Gaubas, E
Kazlauskiene, V
Mazeikis, A
Miskinis, J
Sinius, J
Citation: J. Vaitkus et al., Self-organized nanoclusters of semiconductor compounds on vicinal Si surfaces and its influence on carrier recombination in Si, MAT SCI E C, 15(1-2), 2001, pp. 89-91
Authors:
Vaitkus, J
Baubinas, R
Gaubas, E
Jarasiunas, K
Jasinskaite, R
Kazukauskas, V
Kuprusevicius, E
Matukas, J
Palenskis, V
Storasta, J
Sudzius, M
Tomasiunas, R
Citation: J. Vaitkus et al., GaAs peculiarities related with inhomogeneities and the methods for revealof their properties, NUCL INST A, 466(1), 2001, pp. 39-46
Authors:
Gaubas, E
Vaitkus, J
Smith, KM
Citation: E. Gaubas et al., Monitoring of carrier lifetime in GaAs substrate-epi-layer structures by space-resolved transient microwave absorption, NUCL INST A, 460(1), 2001, pp. 35-40
Authors:
Poyai, A
Simoen, E
Claeys, C
Czerwinski, A
Gaubas, E
Citation: A. Poyai et al., Improved extraction of the activation energy of the leakage current in silicon p-n junction diodes, APPL PHYS L, 78(14), 2001, pp. 1997-1999
Authors:
Gaubas, E
Simoen, E
Claeys, C
Vanhellemont, J
Citation: E. Gaubas et al., Perpendicular excitation-probe microwave absorption technique for carrier lifetime analysis in layered Si structures, MAT SCI E B, 73(1-3), 2000, pp. 1-6
Authors:
Simoen, E
Claeys, C
Gaubas, E
Ohyama, H
Citation: E. Simoen et al., Impact of the divacancy (?) on the generation-recombination properties of 10 MeV proton irradiated Float-Zone silicon diodes, NUCL INST A, 439(2-3), 2000, pp. 310-318
Authors:
Grigoras, K
Pacebutas, V
Sabataityte, J
Simkiene, I
Tvardauskas, H
Gaubas, E
Harkonen, J
Citation: K. Grigoras et al., Formation of shallow n(+)-p junction in silicon by spin-on technique, PHYS SCR, T79, 1999, pp. 236-238
Authors:
Vaitkus, J
Gaubas, E
Kazukauskas, V
Rinkevicius, V
Storasta, J
Tomasiunas, R
Smith, KM
O'Shea, V
Citation: J. Vaitkus et al., Analysis of trap spectra in LEC and epitaxial GaAs, NUCL INST A, 434(1), 1999, pp. 61-66
Authors:
Vaitkus, J
Baubinas, R
Gaubas, E
Kazlauskiene, V
Miskinis, J
Mazeikis, A
Sinius, J
Zasinas, E
Zindulis, A
Citation: J. Vaitkus et al., Cluster and thin layer of compound semiconductor growth on hexagonal and vicinal cubic surface and the simulation of atom behavior, MICROELEC J, 30(4-5), 1999, pp. 335-340
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