ACNP - Italian Periodicals Catalogue

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Results: 1-25 | 26-50 | 51-59

Results: 26-50/59

Formation and properties of self-organized II-VI quantum islands

Authors: Kurtz, E Shen, J Schmidt, M Grun, M Hong, SK Litvinov, D Gerthsen, D Oka, T Yao, T Klingshirn, C

Citation: E. Kurtz et al., Formation and properties of self-organized II-VI quantum islands, THIN SOL FI, 367(1-2), 2000, pp. 68-74

Photocurrent spectroscopy of GaN and AlGaN epilayers grown on 6H (0001) silicon carbide

Authors: DeVittorio, M Coli, G Rinaldi, R Gigli, G Cingolani, R De Salvador, D Berti, M Drigo, A Fucilli, F Ligonzo, T Augelli, V Rizzi, A Lantier, R Freundt, D Luth, H Neubauer, B Gerthsen, D

Citation: M. Devittorio et al., Photocurrent spectroscopy of GaN and AlGaN epilayers grown on 6H (0001) silicon carbide, SOL ST ELEC, 44(3), 2000, pp. 465-470

Lasing in vertical direction in structures with InGaN quantum dots

Authors: Krestnikov, IL Sakharov, AV Lundin, WV Usikov, AS Tsatsulnikov, AF Ledentsov, NN Alferov, ZI Soshnikov, IP Gerthsen, D Plaut, AC Holst, J Hoffmann, A Bimberg, D

Citation: Il. Krestnikov et al., Lasing in vertical direction in structures with InGaN quantum dots, PHYS ST S-A, 180(1), 2000, pp. 91-96

Resonant gain in ZnSe structures with stacked CdSe islands grown in Stranski-Krastanov mode

Authors: Strassburg, M Dworzak, M Hoffmann, A Heitz, R Pohl, UW Bimberg, D Litvinov, D Rosenauer, A Gerthsen, D Kudryashov, I Lischka, K Schikora, D

Citation: M. Strassburg et al., Resonant gain in ZnSe structures with stacked CdSe islands grown in Stranski-Krastanov mode, PHYS ST S-A, 180(1), 2000, pp. 281-285

Localization of excitons in pairs of natural dots induced by stacking faults in ZnSe quantum wells

Authors: Luerssen, D Bleher, R Kalt, H Richter, H Schimmel, T Rosenauer, A Litvinov, D Kamilli, A Gerthsen, D Jobst, B Ohkawa, K Hommel, D

Citation: D. Luerssen et al., Localization of excitons in pairs of natural dots induced by stacking faults in ZnSe quantum wells, PHYS ST S-A, 178(1), 2000, pp. 189-192

Composition fluctuations in InGaN analyzed by transmission electron microscopy

Authors: Gerthsen, D Hahn, E Neubauer, B Rosenauer, A Schon, O Heuken, M Rizzi, A

Citation: D. Gerthsen et al., Composition fluctuations in InGaN analyzed by transmission electron microscopy, PHYS ST S-A, 177(1), 2000, pp. 145-155

Interplay of localization and anisotropy in the optical properties of ordered (AlxGa1-x)(0.52)In0.48P

Authors: Dorr, U Lutz, R Schuler, J Kalt, H Send, W Gerthsen, D

Citation: U. Dorr et al., Interplay of localization and anisotropy in the optical properties of ordered (AlxGa1-x)(0.52)In0.48P, J LUMINESC, 87-9, 2000, pp. 718-720

ZnMgCdSe structures on InP grown by MOVPE

Authors: Strassburg, M Strassburg, M Schulz, O Pohl, UW Bimberg, D Litvinov, D Gerthsen, D Schmidbauer, M Schafer, P

Citation: M. Strassburg et al., ZnMgCdSe structures on InP grown by MOVPE, J CRYST GR, 221, 2000, pp. 416-420

Structural properties and relaxation behavior of short-period BeTe/ZnSe superlattices

Authors: Gerthsen, D Walter, T Fischer, F Gerhard, T Waag, A Landwehr, G

Citation: D. Gerthsen et al., Structural properties and relaxation behavior of short-period BeTe/ZnSe superlattices, J CRYST GR, 214, 2000, pp. 330-334

Stacking-fault-induced pairs of localizing centers in ZnSe quantum wells

Authors: Luerssen, D Bleher, R Kalt, H Richter, H Schimmel, T Rosenauer, A Litvinov, D Kamilli, A Gerthsen, D Jobst, B Ohkawa, K Hommel, D

Citation: D. Luerssen et al., Stacking-fault-induced pairs of localizing centers in ZnSe quantum wells, J CRYST GR, 214, 2000, pp. 634-638

Investigations on the formation kinetics of CdSe quantum dots

Authors: Schikora, D Schwedhelm, S Kudryashov, I Lischka, K Litvinov, D Rosenauer, A Gerthsen, D Strassburg, M Hoffmann, A Bimberg, D

Citation: D. Schikora et al., Investigations on the formation kinetics of CdSe quantum dots, J CRYST GR, 214, 2000, pp. 698-702

Structural and chemical analysis of CdSe islands in a ZnSe matrix by transmission electron microscopy

Authors: Gerthsen, D Rosenauer, A Litvinov, D Peranio, N

Citation: D. Gerthsen et al., Structural and chemical analysis of CdSe islands in a ZnSe matrix by transmission electron microscopy, J CRYST GR, 214, 2000, pp. 707-711

Properties and self-organization of CdSe : S quantum islands grown with a cadmium sulfide compound source

Authors: Kurtz, E Schmidt, M Baldauf, M Wachter, S Grun, M Litvinov, D Hong, SK Shen, JX Yao, T Gerthsen, D Kalt, H Klingshirn, C

Citation: E. Kurtz et al., Properties and self-organization of CdSe : S quantum islands grown with a cadmium sulfide compound source, J CRYST GR, 214, 2000, pp. 712-716

Quantum island formation in CdS/ZnS heterostructures grown by MOVPE

Authors: Meyne, C Pohl, UW Richter, W Strassburg, M Hoffmann, A Turck, V Rodt, S Bimberg, D Gerthsen, D

Citation: C. Meyne et al., Quantum island formation in CdS/ZnS heterostructures grown by MOVPE, J CRYST GR, 214, 2000, pp. 722-726

Optical identification of quantum dot types in CdSe/ZnSe structures

Authors: Strassburg, M Deniozou, T Hoffmann, A Rodt, S Turck, V Heitz, R Pohl, UW Bimberg, D Litvinov, D Rosenauer, A Gerthsen, D Schwedhelm, S Kudryashov, I Lischka, K Schikora, D

Citation: M. Strassburg et al., Optical identification of quantum dot types in CdSe/ZnSe structures, J CRYST GR, 214, 2000, pp. 756-760

Coexistence of planar and three-dimensional quantum dots in CdSe/ZnSe structures

Authors: Strassburg, M Deniozou, T Hoffmann, A Heitz, R Pohl, UW Bimberg, D Litvinov, D Rosenauer, A Gerthsen, D Schwedhelm, S Lischka, K Schikora, D

Citation: M. Strassburg et al., Coexistence of planar and three-dimensional quantum dots in CdSe/ZnSe structures, APPL PHYS L, 76(6), 2000, pp. 685-687

Investigations on the Stranski-Krastanow growth of CdSe quantum dots

Authors: Schikora, D Schwedhelm, S As, DJ Lischka, K Litvinov, D Rosenauer, A Gerthsen, D Strassburg, M Hoffmann, A Bimberg, D

Citation: D. Schikora et al., Investigations on the Stranski-Krastanow growth of CdSe quantum dots, APPL PHYS L, 76(4), 2000, pp. 418-420

LP-MOCVD growth of GaN on silicon substrates - comparison between AlAs andZnO nucleation layers

Authors: Strittmatter, A Krost, A Turck, V Strassburg, M Bimberg, D Blasing, J Hempel, T Christen, J Neubauer, B Gerthsen, D Christmann, T Meyer, BK

Citation: A. Strittmatter et al., LP-MOCVD growth of GaN on silicon substrates - comparison between AlAs andZnO nucleation layers, MAT SCI E B, 59(1-3), 1999, pp. 29-32

Analysis of composition fluctuations in AlxGa1-xN

Authors: Neubauer, B Rosenauer, A Gerthsen, D Ambacher, O Stutzman, M Albrecht, M Strunk, HP

Citation: B. Neubauer et al., Analysis of composition fluctuations in AlxGa1-xN, MAT SCI E B, 59(1-3), 1999, pp. 182-185

Investigation of dislocation networks in dispersion-strengthened aluminum

Authors: Wittmann, R Sexauer, M Gerthsen, D

Citation: R. Wittmann et al., Investigation of dislocation networks in dispersion-strengthened aluminum, MAT SCI E A, 266(1-2), 1999, pp. 183-190

Miniband transport in a semiconductor superlattice with submonolayer barriers

Authors: Schomburg, E Brandl, S Renk, KF Ledentsov, NN Ustinov, VM Zhukov, AE Kovsh, AR Egorov, AY Kyutt, RN Volovik, BV Kop'ev, PS Alferov, ZI Rosenauer, A Litvinov, D Gerthsen, D Pavel'ev, DG Koschurinov, YI

Citation: E. Schomburg et al., Miniband transport in a semiconductor superlattice with submonolayer barriers, PHYS LETT A, 262(4-5), 1999, pp. 396-401

Optical properties of structures with single and multiple InGaN insertionsin a GaN matrix

Authors: Sakharov, AV Lundin, WV Krestnikov, IL Semenov, VA Usikov, AS Tsatsulnikov, AF Musikhin, YG Baidakova, MV Alferov, ZI Ledentsov, NN Holst, J Hoffmann, A Bimberg, D Soshnikov, IP Gerthsen, D

Citation: Av. Sakharov et al., Optical properties of structures with single and multiple InGaN insertionsin a GaN matrix, PHYS ST S-B, 216(1), 1999, pp. 435-440

Three-dimensionally confined excitons and biexcitons in submonolayer-CdSe/ZnSe superlattices

Authors: Strassburg, M Heitz, R Turck, V Rodt, S Pohl, UW Hoffmann, A Bimberg, D Krestnikov, IL Shchukin, VA Ledentsov, NN Alferov, ZI Litvinov, D Rosenauer, A Gerthsen, D

Citation: M. Strassburg et al., Three-dimensionally confined excitons and biexcitons in submonolayer-CdSe/ZnSe superlattices, J ELEC MAT, 28(5), 1999, pp. 506-514

Lasing in structures with InAs quantum dots in an (Al,Ga)As matrix grown by submonolayer deposition

Authors: Tsatsul'nikov, AF Volovik, BV Ledentsov, NN Maximov, MV Egorov, AY Kovsh, AR Ustinov, VM Zhukov, AE Kop'ev, PS Alferov, ZI Kozin, IA Belousov, MV Soshnikov, IP Werner, P Litvinov, D Fischer, U Rosenauer, A Gerthsen, D

Citation: Af. Tsatsul'Nikov et al., Lasing in structures with InAs quantum dots in an (Al,Ga)As matrix grown by submonolayer deposition, J ELEC MAT, 28(5), 1999, pp. 537-541

Composition evaluation by the lattice fringe analysis method using defocusseries

Authors: Rosenauer, A Gerthsen, D

Citation: A. Rosenauer et D. Gerthsen, Composition evaluation by the lattice fringe analysis method using defocusseries, ULTRAMICROS, 76(1-2), 1999, pp. 49-60

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