AAAAAA
Results: 1-25/35
Authors:
Shi, JJ
Sanders, BC
Pan, SH
Goldys, EM
Citation: Jj. Shi et al., Improving performance of resonant tunneling devices in asymmetric structures, PHYSICA E, 10(4), 2001, pp. 535-543
Authors:
Goldys, EM
Godlewski, M
Paskova, T
Pozina, G
Monemar, B
Citation: Em. Goldys et al., Characterization of red emission in nominally undoped hydride vapor phase epitaxy GaN, MRS I J N S, 6(1), 2001, pp. 1-6
Authors:
Valcheva, E
Paskova, T
Abrashev, MV
Persson, PAO
Paskov, PP
Goldys, EM
Beccard, R
Heuken, M
Monemar, B
Citation: E. Valcheva et al., Impact of MOCVD-GaN 'templates' on the spatial non-uniformities of strain and doping distribution in hydride vapour phase epitaxial GaN, MAT SCI E B, 82(1-3), 2001, pp. 35-38
Authors:
Godlewski, M
Goldys, EM
Butcher, KSA
Phillips, MR
Pakula, K
Baranowski, JM
Citation: M. Godlewski et al., Cathodoluminescence investigations of interfaces in InGaN/GaN/sapphire structures, PHYS ST S-B, 228(1), 2001, pp. 179-182
Authors:
Ramelan, AH
Drozdowicz-Tomsia, K
Goldys, EM
Tansley, TL
Citation: Ah. Ramelan et al., Study of optical and electrical properties of AlxGa1-xSb grown by metalorganic chemical vapor deposition, J ELEC MAT, 30(8), 2001, pp. 965-971
Authors:
Godlewski, M
Mackowski, S
Karczewski, G
Goldys, EM
Phillips, MR
Citation: M. Godlewski et al., Cathodoluminescence studies of self-organized CdTe/ZnTe quantum dot structure grown by MBE: in-plane and in-depth properties of the system, SEMIC SCI T, 16(6), 2001, pp. 493-496
Authors:
Godlewski, M
Goldys, EM
Phillips, MR
Pakula, K
Baranowski, JM
Citation: M. Godlewski et al., Cathodoluminescence and depth-profiling cathodoluminescence studies of interface properties in MOCVD-grown InGaN/GaN/sapphire structures: role of GaNbuffer layer, APPL SURF S, 177(1-2), 2001, pp. 22-31
Authors:
Arnaudov, B
Paskova, T
Goldys, EM
Evtimova, S
Monemar, B
Citation: B. Arnaudov et al., Modeling of the free-electron recombination band in emission spectra of highly conducting n-GaN - art. no. 045213, PHYS REV B, 6404(4), 2001, pp. 5213
Authors:
Valcheva, E
Paskova, T
Abrashev, MV
Paskov, PP
Persson, POA
Goldys, EM
Beccard, R
Heuken, M
Monemar, B
Citation: E. Valcheva et al., Elimination of nonuniformities in thick GaN films using metalorganic chemical vapor deposited GaN templates, J APPL PHYS, 90(12), 2001, pp. 6011-6016
Authors:
Motlan,"Goldys, EM
Citation: Em. Motlan,"goldys, Photoluminescence of multilayer GaSb/GaAs self-assembled quantum dots grown by metalorganic chemical vapor deposition at atmospheric pressure, APPL PHYS L, 79(18), 2001, pp. 2976-2978
Authors:
Paskova, T
Goldys, EM
Paskov, PP
Wahab, Q
Wilzen, L
de Jong, MP
Monemar, B
Citation: T. Paskova et al., Mass transport growth and optical emission properties of hydride vapor phase epitaxy GaN, APPL PHYS L, 78(26), 2001, pp. 4130-4132
Authors:
Buyanova, IA
Chen, WM
Goldys, EM
Xin, HP
Tu, CW
Citation: Ia. Buyanova et al., Structural properties of a GaNxP1-x alloy: Raman studies, APPL PHYS L, 78(25), 2001, pp. 3959-3961
Authors:
Goldys, EM
La Rocca, GC
Bassani, F
Citation: Em. Goldys et al., Signatures of excitonic dark states in the time-resolved coherent responseof a quantum well microcavity, PHYS REV B, 61(15), 2000, pp. 10346-10360
Authors:
Goldys, EM
Godlewski, M
Citation: Em. Goldys et M. Godlewski, Nonuniform defect distribution in GaN thin films examined by cathodoluminescence, APPL PHYS A, 70(3), 2000, pp. 329-331
Authors:
Godlewski, M
Goldys, EM
Phillips, MR
Langer, R
Barski, A
Citation: M. Godlewski et al., Cathodoluminescence depth-profiling studies of GaN/AlGaN quantum-well structures, J MATER RES, 15(2), 2000, pp. 495-501
Authors:
Sudesh, V
Goldys, EM
Citation: V. Sudesh et Em. Goldys, Spectroscopic properties of thulium-doped crystalline materials including a novel host, La2Be2O5: a comparative study, J OPT SOC B, 17(6), 2000, pp. 1068-1076
Authors:
Goldys, EM
Godlewski, M
Langer, R
Barski, A
Citation: Em. Goldys et al., Surface morphology of cubic and wurtzite GaN films, APPL SURF S, 153(2-3), 2000, pp. 143-149
Authors:
Subekti, A
Goldys, EM
Tansley, TL
Citation: A. Subekti et al., Characterisation of undoped gallium antimonide grown by metalorganic chemical vapour deposition, J PHYS CH S, 61(4), 2000, pp. 537-544
Authors:
Godlewski, M
Goldys, EM
Phillips, MR
Citation: M. Godlewski et al., Cathodoluminescence studies of in-plane and in-depth properties of GaN epilayers, J LUMINESC, 87-9, 2000, pp. 1155-1157
Authors:
Paskova, T
Goldys, EM
Yakimova, R
Svedberg, EB
Henry, A
Monemar, B
Citation: T. Paskova et al., Influence of growth rate on the structure of thick GaN layers grown by HVPE, J CRYST GR, 208(1-4), 2000, pp. 18-26
Authors:
Subekti, A
Goldys, EM
Paterson, MJ
Drozdowicz-Tomsia, K
Tansley, TL
Citation: A. Subekti et al., Atmospheric pressure chemical vapor deposition growth window for undoped gallium antimonide, J MATER RES, 14(4), 1999, pp. 1238-1245
Authors:
Shi, JJ
Sanders, BC
Pan, SH
Goldys, EM
Citation: Jj. Shi et al., Optical waves in a semiconductor planar microcavity, PHYS ST S-B, 215(2), 1999, pp. 1157-1163
Authors:
Subekti, A
Paterson, MJ
Goldys, EM
Tansley, TL
Citation: A. Subekti et al., The influence of substrate on the self-organised island nucleation and morphology of metalorganic chemical vapour deposited GaSb, APPL SURF S, 140(1-2), 1999, pp. 190-196
Authors:
Goldys, EM
Godlewski, M
Langer, R
Barski, A
Bergman, P
Monemar, B
Citation: Em. Goldys et al., Analysis of the red optical emission in cubic GaN grown by molecular-beam epitaxy, PHYS REV B, 60(8), 1999, pp. 5464-5469
Optical-phonon modes and electron-phonon interaction in arbitrary semiconductor planar microcavities
Authors:
Shi, JJ
Sanders, BC
Pan, SH
Goldys, EM
Citation: Jj. Shi et al., Optical-phonon modes and electron-phonon interaction in arbitrary semiconductor planar microcavities, PHYS REV B, 60(23), 1999, pp. 16031-16038