AAAAAA

   
Results: 1-25 | 26-28
Results: 1-25/28
Gas source MBE growth of TlInGaAs/InP DH structures for the application toWDM optical fiber communication systems
Authors: Asahi, H Konishi, K Maeda, O Ayabe, A Lee, HJ Mizobata, A Asami, K Gonda, S
Citation: H. Asahi et al., Gas source MBE growth of TlInGaAs/InP DH structures for the application toWDM optical fiber communication systems, J CRYST GR, 227, 2001, pp. 307-312
Growth of high-quality polycrystalline GaN on glass substrate by gas source molecular beam epitaxy
Authors: Tampo, H Asahi, H Imanishi, Y Hiroki, M Ohnishi, K Yamada, K Asami, K Gonda, S
Citation: H. Tampo et al., Growth of high-quality polycrystalline GaN on glass substrate by gas source molecular beam epitaxy, J CRYST GR, 227, 2001, pp. 442-446
Growth and characterization of InMnAsSb for the sensor-memory device application at long wavelength region
Authors: Zhou, YK Asahi, H Okumura, S Kanamura, M Asakura, J Asami, K Nakajima, M Harima, H Gonda, S
Citation: Yk. Zhou et al., Growth and characterization of InMnAsSb for the sensor-memory device application at long wavelength region, J CRYST GR, 227, 2001, pp. 614-618
Characterization of self-organized GaP/InP quantum dots with scanning tunneling spectroscopy and time-resolved PL spectroscopy
Authors: Mori, J Asahi, H Noh, JH Fudeta, M Watanabe, D Matsuda, S Asami, K Seki, S Matsui, Y Tagawa, S Gonda, S
Citation: J. Mori et al., Characterization of self-organized GaP/InP quantum dots with scanning tunneling spectroscopy and time-resolved PL spectroscopy, J CRYST GR, 227, 2001, pp. 1095-1099
Improvement of optical properties of multilayer quantum dots self-formed in GaP/InP short-period superlattices on GaAs(311)A
Authors: Watanabe, D Asahi, H Noh, JH Fudeta, M Mori, J Matsuda, S Asami, K Gonda, S
Citation: D. Watanabe et al., Improvement of optical properties of multilayer quantum dots self-formed in GaP/InP short-period superlattices on GaAs(311)A, JPN J A P 1, 39(7B), 2000, pp. 4601-4603
Gas source MBE growth of GaN-related novel semiconductors
Authors: Asahi, H Tampo, H Hiroki, H Asami, K Gonda, S
Citation: H. Asahi et al., Gas source MBE growth of GaN-related novel semiconductors, MAT SCI E B, 75(2-3), 2000, pp. 199-203
Raman scattering in resonance with yellow luminescence transitions in GaN layers grown on sapphire by molecular beam epitaxy
Authors: Tripathy, S Soni, RK Asahi, H Gonda, S
Citation: S. Tripathy et al., Raman scattering in resonance with yellow luminescence transitions in GaN layers grown on sapphire by molecular beam epitaxy, PHYSICA B, 275(4), 2000, pp. 301-307
Structural and optical characterization of self-formed GaP/InP quantum dots
Authors: Gonda, S Asahi, H Mori, J Watanabe, D Matsuda, S Noh, JH Fudeta, M Asami, K Seki, S Matsui, Y Tagawa, S
Citation: S. Gonda et al., Structural and optical characterization of self-formed GaP/InP quantum dots, J ELEC MAT, 29(5), 2000, pp. 530-534
Scanning tunneling microscopy and time-resolved photoluminiscence spectroscopy study of self-organized GaP/InP quantum dot structures
Authors: Mori, J Asahi, H Fudeta, M Noh, JH Watanabe, D Matsuda, S Asami, K Narukawa, Y Kawakami, Y Fujita, S Kaneko, T Gonda, S
Citation: J. Mori et al., Scanning tunneling microscopy and time-resolved photoluminiscence spectroscopy study of self-organized GaP/InP quantum dot structures, APPL SURF S, 159, 2000, pp. 498-502
Magnetic and optical properties of Mn-including InAs dots grown by metalorganic molecular beam epitaxy
Authors: Zhou, YK Asahi, H Asakura, J Okumura, S Asami, K Gonda, S
Citation: Yk. Zhou et al., Magnetic and optical properties of Mn-including InAs dots grown by metalorganic molecular beam epitaxy, J CRYST GR, 221, 2000, pp. 605-610
Improved properties of polycrystalline GaN grown on silica glass substrate
Authors: Hiroki, M Asahi, H Tampo, H Asami, K Gonda, S
Citation: M. Hiroki et al., Improved properties of polycrystalline GaN grown on silica glass substrate, J CRYST GR, 209(2-3), 2000, pp. 387-391
Gas-source MBE growth of Tl-based III-V semiconductors and their Raman scattering characterization
Authors: Zhou, YK Asahi, H Ayabe, A Takenaka, K Fushida, M Asami, K Gonda, S
Citation: Yk. Zhou et al., Gas-source MBE growth of Tl-based III-V semiconductors and their Raman scattering characterization, J CRYST GR, 209(2-3), 2000, pp. 547-551
Very small temperature-dependent band-gap energy in TlInGaAs/InP double heterostructures grown by gas-source molecular-beam epitaxy
Authors: Ayabe, A Asahi, H Lee, HJ Maeda, O Konishi, K Asami, K Gonda, S
Citation: A. Ayabe et al., Very small temperature-dependent band-gap energy in TlInGaAs/InP double heterostructures grown by gas-source molecular-beam epitaxy, APPL PHYS L, 77(14), 2000, pp. 2148-2150
Growth temperature dependence of self-formation process of quantum dot structures in GaP/InP short-period superlattices grown on GaAs (311)A substrate
Authors: Noh, JH Asahi, H Fudeta, M Watanabe, D Mori, J Gonda, S
Citation: Jh. Noh et al., Growth temperature dependence of self-formation process of quantum dot structures in GaP/InP short-period superlattices grown on GaAs (311)A substrate, JPN J A P 1, 38(4B), 1999, pp. 2521-2523
Growth of TlInGaAs on InP by gas-source molecular beam epitaxy
Authors: Takenaka, K Asahi, H Koh, H Asami, K Gonda, S Oe, K
Citation: K. Takenaka et al., Growth of TlInGaAs on InP by gas-source molecular beam epitaxy, JPN J A P 1, 38(2B), 1999, pp. 1026-1028
Improved optical properties of strain-induced quantum dots self-formed in GaP/InP short-period superlattices
Authors: Fudeta, M Asahi, H Kim, SJ Noh, JH Asami, K Gonda, S
Citation: M. Fudeta et al., Improved optical properties of strain-induced quantum dots self-formed in GaP/InP short-period superlattices, JPN J A P 1, 38(2B), 1999, pp. 1078-1080
Time-resolved photoluminescence study of strain-induced quantum dots self-formed in GaP/InP short-period superlattice
Authors: Fudeta, M Asahi, H Asami, K Narukawa, Y Kawakami, Y Noh, JH Mori, J Watanabe, D Fujita, S Gonda, S
Citation: M. Fudeta et al., Time-resolved photoluminescence study of strain-induced quantum dots self-formed in GaP/InP short-period superlattice, JPN J A P 2, 38(9AB), 1999, pp. L1006-L1008
Straight quantum wires self-formed by growing GaP/InP short-period superlattices on GaAs(011) substrate
Authors: Kim, SJ Asahi, H Asami, K Fudeta, M Gonda, S
Citation: Sj. Kim et al., Straight quantum wires self-formed by growing GaP/InP short-period superlattices on GaAs(011) substrate, JPN J A P 2, 38(7A), 1999, pp. L706-L709
CuAu-type ordering self-formed by growing GaP/InP short-period superlattices on GaAs (011) substrate
Authors: Kim, SJ Asahi, H Asami, K Gonda, S
Citation: Sj. Kim et al., CuAu-type ordering self-formed by growing GaP/InP short-period superlattices on GaAs (011) substrate, JPN J A P 2, 38(12A), 1999, pp. L1372-L1374
Mechanical performances of a symmetrical, monolithic three-dimensional fine-motion stage for nanometrology
Authors: Gonda, S Kurosawa, T Tanimura, Y
Citation: S. Gonda et al., Mechanical performances of a symmetrical, monolithic three-dimensional fine-motion stage for nanometrology, MEAS SCI T, 10(11), 1999, pp. 986-993
Strong photoluminescence emission from GaN on SrTiO3
Authors: Tampo, H Asahi, H Hiroki, M Asami, K Gonda, S
Citation: H. Tampo et al., Strong photoluminescence emission from GaN on SrTiO3, PHYS ST S-B, 216(1), 1999, pp. 113-116
Observation of quantum-dot-like properties in the phase-separated GaN-richGaNP
Authors: Kuroiwa, R Asahi, H Iwata, K Tampo, H Asami, K Gonda, S
Citation: R. Kuroiwa et al., Observation of quantum-dot-like properties in the phase-separated GaN-richGaNP, PHYS ST S-B, 216(1), 1999, pp. 461-464
Accurate topographic images using a measuring atomic force microscope
Authors: Gonda, S Doi, T Kurosawa, T Tanimura, Y Hisata, N Yamagishi, T Fujimoto, H Yukawa, H
Citation: S. Gonda et al., Accurate topographic images using a measuring atomic force microscope, APPL SURF S, 145, 1999, pp. 505-509
Real-time, interferometrically measuring atomic force microscope for direct calibration of standards
Authors: Gonda, S Doi, T Kurosawa, T Tanimura, Y Hisata, N Yamagishi, T Fujimoto, H Yukawa, H
Citation: S. Gonda et al., Real-time, interferometrically measuring atomic force microscope for direct calibration of standards, REV SCI INS, 70(8), 1999, pp. 3362-3368
Very strong photoluminescence emission from GaN grown on amorphous silica substrate by gas source MBE
Authors: Asahi, H Iwata, K Tampo, H Kuroiwa, R Hiroki, M Asami, K Nakamura, S Gonda, S
Citation: H. Asahi et al., Very strong photoluminescence emission from GaN grown on amorphous silica substrate by gas source MBE, J CRYST GR, 202, 1999, pp. 371-375
Risultati: 1-25 | 26-28