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Results: 1-25/75
Authors:
Alexe, M
Harnagea, C
Visinoiu, A
Pignolet, A
Hesse, D
Gosele, U
Citation: M. Alexe et al., Patterning and switching of nano-size ferroelectric memory cells, SCR MATER, 44(8-9), 2001, pp. 1175-1179
Authors:
Schilling, J
Birner, A
Muller, F
Wehrspohn, RB
Hillebrand, R
Gosele, U
Busch, K
John, S
Leonard, SW
van Driel, HM
Citation: J. Schilling et al., Optical characterisation of 2D macroporous silicon photonic crystals with bandgaps around 3.5 and 1.3 mu m, OPT MATER, 17(1-2), 2001, pp. 7-10
Authors:
Zakharov, ND
Werner, P
Gosele, U
Gerth, G
Cirlin, G
Egorov, VA
Volovik, BV
Citation: Nd. Zakharov et al., Structure and optical properties of Ge/Si superlattice grown at Si substrate by MBE at different temperatures, MAT SCI E B, 87(1), 2001, pp. 92-95
Authors:
Cirlin, GE
Polyakov, NK
Petrov, VN
Egorov, VA
Denisov, DV
Volovik, BV
Ustinov, VM
Alferov, ZI
Ledentsov, NN
Heitz, R
Bimberg, D
Zakharov, ND
Werner, P
Gosele, U
Citation: Ge. Cirlin et al., Incorporation of InAs nanostructures in a silicon matrix: growth, structure and optical properties, MAT SCI E B, 80(1-3), 2001, pp. 108-111
Authors:
Kogler, R
Peeva, A
Werner, P
Skorupa, W
Gosele, U
Citation: R. Kogler et al., Gettering centres in high-energy ion-implanted silicon investigated by point defect recombination, NUCL INST B, 175, 2001, pp. 340-344
Authors:
Genereux, F
Leonard, SW
van Driel, HM
Birner, A
Gosele, U
Citation: F. Genereux et al., Large birefringence in two-dimensional silicon photonic crystals - art. no. 161101, PHYS REV B, 6316(16), 2001, pp. 1101
Authors:
Wakayama, Y
Gerth, G
Werner, P
Gosele, U
Sokolov, LV
Citation: Y. Wakayama et al., Control of structure, size and density of Ge dot on Si (100) through multistep procedure, J CRYST GR, 231(4), 2001, pp. 474-487
Authors:
Akatsu, T
Plossl, A
Scholz, R
Stenzel, H
Gosele, U
Citation: T. Akatsu et al., Wafer bonding of different III-V compound semiconductors by atomic hydrogen surface cleaning, J APPL PHYS, 90(8), 2001, pp. 3856-3862
Authors:
Chaldyshev, VV
Bert, NA
Musikhin, YG
Suvorova, AA
Preobrazhenskii, VV
Putyato, MA
Semyagin, BR
Werner, P
Gosele, U
Citation: Vv. Chaldyshev et al., Enhanced As-Sb intermixing of GaSb monolayer superlattices in low-temperature grown GaAs, APPL PHYS L, 79(9), 2001, pp. 1294-1296
Authors:
Nielsch, K
Wehrspohn, RB
Barthel, J
Kirschner, J
Gosele, U
Fischer, SF
Kronmuller, H
Citation: K. Nielsch et al., Hexagonally ordered 100 nm period nickel nanowire arrays, APPL PHYS L, 79(9), 2001, pp. 1360-1362
Authors:
Alexe, M
Harnagea, C
Hesse, D
Gosele, U
Citation: M. Alexe et al., Polarization imprint and size effects in mesoscopic ferroelectric structures, APPL PHYS L, 79(2), 2001, pp. 242-244
Authors:
Schilling, J
Muller, F
Matthias, S
Wehrspohn, RB
Gosele, U
Busch, K
Citation: J. Schilling et al., Three-dimensional photonic crystals based on macroporous silicon with modulated pore diameter, APPL PHYS L, 78(9), 2001, pp. 1180-1182
Authors:
Muller, F
Birner, A
Gosele, U
Lehmann, V
Ottow, S
Foll, H
Citation: F. Muller et al., Structuring of macroporous silicon for applications as photonic crystals, J POROUS MA, 7(1-3), 2000, pp. 201-204
Authors:
Birner, A
Li, AP
Muller, F
Gosele, U
Kramper, P
Sandoghdar, V
Mlynek, J
Busch, K
Lehmann, V
Citation: A. Birner et al., Transmission of a microcavity structure in a two-dimensional photonic crystal based on macroporous silicon, MAT SC S PR, 3(5-6), 2000, pp. 487-491
Authors:
Chen, C
Tu, KN
Tung, CH
Sheng, TT
Ploessl, A
Scholz, R
Gosele, U
Citation: C. Chen et al., Twist-type silicon bicrystals and compliant substrates prepared from silicon-on-insulator wafers, PHIL MAG A, 80(4), 2000, pp. 881-891
Authors:
Li, AP
Muller, F
Gosele, U
Citation: Ap. Li et al., Polycrystalline and monocrystalline pore arrays with large interpore distance in anodic alumina, EL SOLID ST, 3(3), 2000, pp. 131-134
Authors:
Leonard, SW
Mondia, JP
van Driel, HM
Toader, O
John, S
Busch, K
Birner, A
Gosele, U
Lehmann, V
Citation: Sw. Leonard et al., Tunable two-dimensional photonic crystals using liquid-crystal infiltration, PHYS REV B, 61(4), 2000, pp. R2389-R2392
Authors:
Lee, HN
Senz, S
Visinoiu, A
Pignolet, A
Hesse, D
Gosele, U
Citation: Hn. Lee et al., Epitaxial growth of non-c-oriented ferroelectric SrBi2Ta2O9 thin films on Si(100) substrates, APPL PHYS A, 71(1), 2000, pp. 101-104
Authors:
Alexe, M
Harnagea, C
Erfurth, W
Hesse, D
Gosele, U
Citation: M. Alexe et al., 100-nm lateral size ferroelectric memory cells fabricated by electron-beamdirect writing, APPL PHYS A, 70(3), 2000, pp. 247-251
Authors:
Harnagea, C
Pignolet, A
Alexe, M
Hesse, D
Gosele, U
Citation: C. Harnagea et al., Quantitative ferroelectric characterization of single submicron grains in Bi-layered perovskite thin films, APPL PHYS A, 70(3), 2000, pp. 261-267
Authors:
Pignolet, A
Schafer, C
Satyalakshmi, KM
Harnagea, C
Hesse, D
Gosele, U
Citation: A. Pignolet et al., Orientation dependence of ferroelectricity in pulsed-laser-deposited epitaxial bismuth-layered perovskite thin films, APPL PHYS A, 70(3), 2000, pp. 283-291
Authors:
Kastner, G
Akatsu, T
Senz, S
Plossl, A
Gosele, U
Citation: G. Kastner et al., Large-area wafer bonding of GaAs using hydrogen and ultrahigh vacuum atmospheres, APPL PHYS A, 70(1), 2000, pp. 13-19
Authors:
Nielsch, K
Muller, F
Li, AP
Gosele, U
Citation: K. Nielsch et al., Uniform nickel deposition into ordered alumina pores by pulsed electrodeposition, ADVAN MATER, 12(8), 2000, pp. 582-586
Authors:
Wiegand, M
Reiche, M
Gosele, U
Gutjahr, K
Stolze, D
Longwitz, R
Citation: M. Wiegand et al., Wafer bonding of silicon wafers covered with various surface layers, SENS ACTU-A, 86(1-2), 2000, pp. 91-95
Authors:
Hillebrand, R
Kirschner, H
Werner, P
Gosele, U
Citation: R. Hillebrand et al., HREM image analysis of III-V heterostructures based on neural networks, PHYS ST S-B, 222(1), 2000, pp. 185-198