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Results: 1-19 |
Results: 19
Valence band intersubband electro luminescence from Si/SiGe quantum cascade structures
Authors: Sigg, H Dehlinger, G Diehl, L Gennser, U Stutz, S Faist, J Grutzmacher, D Ensslin, K Muller, E
Citation: H. Sigg et al., Valence band intersubband electro luminescence from Si/SiGe quantum cascade structures, PHYSICA E, 11(2-3), 2001, pp. 240-244
Impact of nanometer-scale roughness on contact-angle hysteresis and globulin adsorption
Authors: Muller, B Riedel, M Michel, R De Paul, SM Hofer, R Heger, D Grutzmacher, D
Citation: B. Muller et al., Impact of nanometer-scale roughness on contact-angle hysteresis and globulin adsorption, J VAC SCI B, 19(5), 2001, pp. 1715-1720
Single-hole transistor in a p-Si/SiGe quantum well
Authors: Dotsch, U Gennser, U David, C Dehlinger, G Grutzmacher, D Heinzel, T Luscher, S Ensslin, K
Citation: U. Dotsch et al., Single-hole transistor in a p-Si/SiGe quantum well, APPL PHYS L, 78(3), 2001, pp. 341-343
Raman spectroscopy of carbon-induced germanium dots
Authors: Guedj, C Beyer, A Muller, E Grutzmacher, D
Citation: C. Guedj et al., Raman spectroscopy of carbon-induced germanium dots, APPL PHYS L, 78(12), 2001, pp. 1742-1744
Coexistence of weak localization and a metallic phase in Si/SiGe quantum wells
Authors: Senz, V Heinzel, T Ihn, T Ensslin, K Dehlinger, G Grutzmacher, D Gennser, U
Citation: V. Senz et al., Coexistence of weak localization and a metallic phase in Si/SiGe quantum wells, PHYS REV B, 61(8), 2000, pp. R5082-R5085
In situ STM analysis and photoluminescence of C-induced Ge dots
Authors: Beyer, A Leifeld, O Stutz, S Muller, E Grutzmacher, D
Citation: A. Beyer et al., In situ STM analysis and photoluminescence of C-induced Ge dots, NANOTECHNOL, 11(4), 2000, pp. 298-304
Formation and ordering effects of C-induced Ge dots grown on Si (001) by molecular beam epitaxy
Authors: Leifeld, O Beyer, A Muller, E Kern, K Grutzmacher, D
Citation: O. Leifeld et al., Formation and ordering effects of C-induced Ge dots grown on Si (001) by molecular beam epitaxy, MAT SCI E B, 74(1-3), 2000, pp. 222-228
Nucleation of Ge quantum dots on the C-alloyed Si(001) surface
Authors: Leifeld, O Beyer, A Muller, E Grutzmacher, D Kern, K
Citation: O. Leifeld et al., Nucleation of Ge quantum dots on the C-alloyed Si(001) surface, THIN SOL FI, 380(1-2), 2000, pp. 176-179
Photoluminescence of carbon-induced Ge islands in silicon
Authors: Beyer, A Leifeld, O Muller, E Stutz, S Sigg, H Grutzmacher, D
Citation: A. Beyer et al., Photoluminescence of carbon-induced Ge islands in silicon, THIN SOL FI, 380(1-2), 2000, pp. 246-248
Investigation of the emitter structure in SiGe/Si resonant tunneling structures
Authors: Dehlinger, G Gennser, U Grutzmacher, D Ihn, T Muller, E Ensslin, K
Citation: G. Dehlinger et al., Investigation of the emitter structure in SiGe/Si resonant tunneling structures, THIN SOL FI, 369(1-2), 2000, pp. 390-393
Intersubband electroluminescence from silicon-based quantum cascade structures
Authors: Dehlinger, G Diehl, L Gennser, U Sigg, H Faist, J Ensslin, K Grutzmacher, D Muller, E
Citation: G. Dehlinger et al., Intersubband electroluminescence from silicon-based quantum cascade structures, SCIENCE, 290(5500), 2000, pp. 2277
Analysis of the metallic phase of two-dimensional holes in SiGe in terms of temperature dependent screening
Authors: Senz, V Ihn, T Heinzel, T Ensslin, K Dehlinger, G Grutzmacher, D Gennser, U
Citation: V. Senz et al., Analysis of the metallic phase of two-dimensional holes in SiGe in terms of temperature dependent screening, PHYS REV L, 85(20), 2000, pp. 4357-4360
Size control of carbon-induced Ge quantum dots
Authors: Beyer, A Muller, E Sigg, H Stutz, S Grutzmacher, D Leifeld, O Ensslin, K
Citation: A. Beyer et al., Size control of carbon-induced Ge quantum dots, APPL PHYS L, 77(20), 2000, pp. 3218-3220
Self-organized growth of Ge quantum dots on Si(001) substrates induced by sub-monolayer C coverages
Authors: Leifeld, O Hartmann, R Muller, E Kaxiras, E Kern, K Grutzmacher, D
Citation: O. Leifeld et al., Self-organized growth of Ge quantum dots on Si(001) substrates induced by sub-monolayer C coverages, NANOTECHNOL, 10(2), 1999, pp. 122-126
Pre-structuring of silicon substrates to investigate MBE-growth of SiGe layers
Authors: David, C Hartmann, R Gennser, U Muller, E Grutzmacher, D
Citation: C. David et al., Pre-structuring of silicon substrates to investigate MBE-growth of SiGe layers, MICROEL ENG, 46(1-4), 1999, pp. 275-278
Dimer pairing on the C-alloyed Si(001) surface
Authors: Leifeld, O Grutzmacher, D Muller, B Kern, K Kaxiras, E Kelires, PC
Citation: O. Leifeld et al., Dimer pairing on the C-alloyed Si(001) surface, PHYS REV L, 82(5), 1999, pp. 972-975
In situ scanning tunneling microscopy study of C-induced Ge quantum dot formation on Si(100)
Authors: Leifeld, O Muller, E Grutzmacher, D Muller, B Kern, K
Citation: O. Leifeld et al., In situ scanning tunneling microscopy study of C-induced Ge quantum dot formation on Si(100), APPL PHYS L, 74(7), 1999, pp. 994-996
Structural characterization of SiGe step graded buffer layers grown on prestructured Si[001] substrates by molecular beam epitaxy
Authors: Muller, E Hartmann, R David, C Grutzmacher, D
Citation: E. Muller et al., Structural characterization of SiGe step graded buffer layers grown on prestructured Si[001] substrates by molecular beam epitaxy, THIN SOL FI, 336(1-2), 1998, pp. 92-95
Band gap and band alignment of strain reduced Si/Si1-x-yGexCy multiple quantum well structures obtained by photoluminescence measurements
Authors: Hartmann, R Gennser, U Sigg, H Grutzmacher, D Ensslin, K
Citation: R. Hartmann et al., Band gap and band alignment of strain reduced Si/Si1-x-yGexCy multiple quantum well structures obtained by photoluminescence measurements, APPL PHYS L, 73(9), 1998, pp. 1257-1259
Risultati: 1-19 |