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Results:
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Results: 20
Authors:
Sanguinetti, S
Gurioli, M
Grilli, E
Guzzi, M
Henini, M
Citation: S. Sanguinetti et al., Piezoelectric effects on optical properties and carrier kinetics of InAs/GaAs(N11) self-assembled quantum dots, PHYS ST S-B, 224(1), 2001, pp. 111-114
Authors:
Mullins, D
Kirby, D
Hwa, J
Guzzi, M
Rivier, J
Parker, E
Citation: D. Mullins et al., Identification of potent and selective neuropeptide YY1 receptor agonists with orexigenic activity in vivo, MOLEC PHARM, 60(3), 2001, pp. 534-540
Authors:
Balasubramaniam, A
Dhawan, VC
Mullins, DE
Chance, WT
Sheriff, S
Guzzi, M
Prabhakaran, M
Parker, EM
Citation: A. Balasubramaniam et al., Highly selective and potent neuropeptide Y (NPY) Y1 receptor antagonists based on [Pro(30), Tyr(32), Leu(34)]NPY(28-36)-NH2 (BW1911U90), J MED CHEM, 44(10), 2001, pp. 1479-1482
Authors:
Sanguinetti, S
Chiantoni, G
Miotto, A
Grilli, E
Guzzi, M
Henini, M
Polimeni, A
Patane, A
Eaves, L
Main, PC
Citation: S. Sanguinetti et al., Self-assembling of In(Ga)As/GaAs quantum dots on (N11) substrates: the (311)A case, MICRON, 31(3), 2000, pp. 309-313
Authors:
Pizzini, S
Guzzi, M
Grilli, E
Borionetti, G
Citation: S. Pizzini et al., The photoluminescence emission in the 0.7-0.9 eV range from oxygen precipitates, thermal donors and dislocations in silicon, J PHYS-COND, 12(49), 2000, pp. 10131-10143
Authors:
Sanguinetti, S
Chiantoni, G
Grilli, E
Guzzi, M
Henini, M
Polimeni, A
Patane, A
Eaves, L
Main, PC
Citation: S. Sanguinetti et al., 3D island nucleation behaviour on high index substrates, MAT SCI E B, 74(1-3), 2000, pp. 239-241
Authors:
Parker, EM
Balasubramaniam, A
Guzzi, M
Mullins, DE
Salisbury, BG
Sheriff, S
Witten, MB
Hwa, JJ
Citation: Em. Parker et al., [D-Trp(34)] neuropeptide Y is a potent and selective neuropeptide YY5 receptor agonist with dramatic effects on food intake, PEPTIDES, 21(3), 2000, pp. 393-399
Authors:
Sanguinetti, S
Gurioli, M
Grilli, E
Guzzi, M
Henini, M
Citation: S. Sanguinetti et al., Piezoelectric effects in InAs/GaAs(N11) self-assembled quantum dots, THIN SOL FI, 380(1-2), 2000, pp. 198-200
Authors:
Sanguinetti, S
Padovani, M
Gurioli, M
Grilli, E
Guzzi, M
Vinattieri, A
Colocci, M
Frigeri, P
Franchi, S
Lazzarini, L
Salviati, G
Citation: S. Sanguinetti et al., Study of GaAs spacer layers in InAs/GaAs vertically aligned quantum dot structures, THIN SOL FI, 380(1-2), 2000, pp. 224-226
Authors:
Mullins, DE
Guzzi, M
Xia, L
Parker, EM
Citation: De. Mullins et al., Pharmacological characterization of the cloned neuropeptide Y y(6) receptor, EUR J PHARM, 395(2), 2000, pp. 87-93
Authors:
Sanguinetti, S
Padovani, M
Gurioli, M
Grilli, E
Guzzi, M
Vinattieri, A
Colocci, M
Frigeri, P
Franchi, S
Citation: S. Sanguinetti et al., Carrier transfer and photoluminescence quenching in InAs/GaAs multilayer quantum dots, APPL PHYS L, 77(9), 2000, pp. 1307-1309
Authors:
Sanguinetti, S
Gurioli, M
Grilli, E
Guzzi, M
Henini, M
Citation: S. Sanguinetti et al., Piezoelectric-induced quantum-confined Stark effect in self-assembled InAsquantum dots grown on (N11) GaAs substrates, APPL PHYS L, 77(13), 2000, pp. 1982-1984
Authors:
Sanguinetti, S
Castiglioni, S
Grilli, E
Guzzi, M
Panzarini, G
Andreani, LC
Henini, M
Citation: S. Sanguinetti et al., Intrinsic polarised emission from InAs/GaAs(311)A quantum dots, JPN J A P 1, 38(8), 1999, pp. 4676-4679
Authors:
Sanguinetti, S
Chiantoni, G
Grilli, E
Guzzi, M
Henini, M
Polimeni, A
Patane, A
Eaves, L
Main, PC
Citation: S. Sanguinetti et al., Substrate orientation dependence of island nucleation critical thickness in strained heterostructures, EUROPH LETT, 47(6), 1999, pp. 701-707
Authors:
Schieber, M
Zuck, A
Sanguinetti, S
Montalti, M
Braiman, M
Melekhov, L
Nissenbaum, J
Grilli, E
Guzzi, M
Turchetta, R
Dulinski, W
Husson, D
Riester, JL
Citation: M. Schieber et al., Characterization studies of purified HgI2 precursors, NUCL INST A, 428(1), 1999, pp. 25-29
Authors:
Salviati, G
Albrecht, M
Zanotti-Fregonara, C
Armani, N
Mayer, M
Shreter, Y
Guzzi, M
Melnik, YV
Vassilevski, K
Dmitriev, VA
Strunk, HP
Citation: G. Salviati et al., Cathodoluminescence and transmission electron microscopy study of the influence of crystal defects on optical transitions in GaN, PHYS ST S-A, 171(1), 1999, pp. 325-339
Authors:
Sanguinetti, S
Miotto, A
Castiglioni, S
Grilli, E
Guzzi, M
Henini, M
Polimeni, A
Patane, A
Eaves, L
Main, PC
Citation: S. Sanguinetti et al., Optical and morphological properties of In(Ga)As/GaAs quantum dots grown on novel index surfaces, MICROELEC J, 30(4-5), 1999, pp. 419-425
Authors:
Polimeni, A
Patane, A
Henini, M
Eaves, L
Main, PC
Sanguinetti, S
Guzzi, M
Citation: A. Polimeni et al., Influence of high-index GaAs substrates on the growth of highly strained (InGa)As/GaAs heterostructures, J CRYST GR, 202, 1999, pp. 276-279
Authors:
Sanguinetti, S
Fortina, SC
Miotto, A
Grilli, E
Guzzi, M
Henini, M
Polimeni, A
Eaves, L
Citation: S. Sanguinetti et al., Self-aggregation of InAs quantum dots on (N11) GaAs substrates, THIN SOL FI, 336(1-2), 1998, pp. 9-12
Authors:
Binetti, S
Cavallini, A
Dellafiore, A
Fraboni, B
Grilli, E
Guzzi, M
Pizzini, S
Sanguinetti, S
Citation: S. Binetti et al., Erbium-doped silicon epilayers grown by liquid-phase epitaxy, J LUMINESC, 80(1-4), 1998, pp. 347-351
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