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Results: 1-22 |
Results: 22
Electroluminescence of beta-FeSi2 light emitting devices
Authors: Lourenco, MA Butler, TM Kewell, AK Gwilliam, RM Kirkby, KJ Homewood, KP
Citation: Ma. Lourenco et al., Electroluminescence of beta-FeSi2 light emitting devices, JPN J A P 1, 40(6A), 2001, pp. 4041-4044
Development of a novel tool for semiconductor process control
Authors: Gwilliam, RM Knights, AP Wendler, E Sealy, BJ Burrows, CP Coleman, PG
Citation: Rm. Gwilliam et al., Development of a novel tool for semiconductor process control, MAT SCI E B, 80(1-3), 2001, pp. 60
Ion beam synthesis of low resistivity contacts in amorphous silicon-based materials
Authors: Emerson, NG Gwilliam, RM Sealy, BJ
Citation: Ng. Emerson et al., Ion beam synthesis of low resistivity contacts in amorphous silicon-based materials, J ELEC MAT, 30(2), 2001, pp. L5-L7
The study of lattice damage using slow positrons following low energy B+ implantation of silicon
Authors: Gwilliam, RM Knights, AP Nejim, A Sealy, BJ Burrows, CP Malik, F Coleman, PG
Citation: Rm. Gwilliam et al., The study of lattice damage using slow positrons following low energy B+ implantation of silicon, NUCL INST B, 175, 2001, pp. 62-67
Electrical, electronic and optical characterisation of ion beam synthesised beta-FeSi2 light emitting devices
Authors: Lourenco, MA Butler, TM Kewell, AK Gwilliam, RM Kirkby, KJ Homewood, KP
Citation: Ma. Lourenco et al., Electrical, electronic and optical characterisation of ion beam synthesised beta-FeSi2 light emitting devices, NUCL INST B, 175, 2001, pp. 159-163
A comparative study of vacancies produced by proton implantation of silicon using positron annihilation and deep level transient spectroscopy
Authors: Lourenco, MA Knights, AP Homewood, KP Gwilliam, RM Simpson, PJ Mascher, P
Citation: Ma. Lourenco et al., A comparative study of vacancies produced by proton implantation of silicon using positron annihilation and deep level transient spectroscopy, NUCL INST B, 175, 2001, pp. 300-304
Properties of beta-FeSi2 grown by combined ion irradiation and annealing of Fe/Si bilayers
Authors: Milosavljevic, M Shao, G Gwilliam, RM Jeynes, C McKinty, CN Homewood, KP
Citation: M. Milosavljevic et al., Properties of beta-FeSi2 grown by combined ion irradiation and annealing of Fe/Si bilayers, NUCL INST B, 175, 2001, pp. 309-313
Structural improvement of SiGe films by C and F implantation and solid phase crystallization
Authors: Rodriguez, A Olivares, J Sangrador, J Rodriguez, T Ballesteros, C Castro, M Gwilliam, RM
Citation: A. Rodriguez et al., Structural improvement of SiGe films by C and F implantation and solid phase crystallization, THIN SOL FI, 383(1-2), 2001, pp. 113-116
Ion beam synthesized silicides: growth, characterization and devices
Authors: Homewood, KP Reeson, KJ Gwilliam, RM Kewell, AK Lourenco, MA Shao, G Chen, YL Sharpe, JS McKinty, CN Butler, T
Citation: Kp. Homewood et al., Ion beam synthesized silicides: growth, characterization and devices, THIN SOL FI, 381(2), 2001, pp. 188-193
An efficient room-temperature silicon-based light-emitting diode (vol 410,pg 192, 2001)
Authors: Ng, WL Lourenco, MA Gwilliam, RM Ledain, S Shao, G Homewood, KP
Citation: Wl. Ng et al., An efficient room-temperature silicon-based light-emitting diode (vol 410,pg 192, 2001), NATURE, 414(6862), 2001, pp. 470-470
An efficient room-temperature silicon-based light-emitting diode
Authors: Ng, WL Lourenco, MA Gwilliam, RM Ledain, S Shao, G Homewood, KP
Citation: Wl. Ng et al., An efficient room-temperature silicon-based light-emitting diode, NATURE, 410(6825), 2001, pp. 192-194
Microstructure of (100) silicon wafer implanted by 1 MeV Ru+ ions
Authors: Chen, YL Shao, G Sharpe, J Gwilliam, RM Kirkby, KR Homewood, KP Goringe, MJ
Citation: Yl. Chen et al., Microstructure of (100) silicon wafer implanted by 1 MeV Ru+ ions, J MATER SCI, 36(2), 2001, pp. 321-327
Growth temperature dependence for the formation of vacancy clusters in Si/Si0.64Ge0.36/Si structures
Authors: Knights, AP Gwilliam, RM Sealy, BJ Grasby, TJ Parry, CP Fulgoni, DJF Phillips, PJ Whall, TE Parker, EHC Coleman, PG
Citation: Ap. Knights et al., Growth temperature dependence for the formation of vacancy clusters in Si/Si0.64Ge0.36/Si structures, J APPL PHYS, 89(1), 2001, pp. 76-79
Fast prototyping of microfluidic devices for separation science
Authors: Hoettges, KF Gwilliam, RM Homewood, KP Stevenson, D
Citation: Kf. Hoettges et al., Fast prototyping of microfluidic devices for separation science, CHROMATOGR, 53, 2001, pp. S424-S426
Grain size, grain uniformity, and (111) texture enhancement by solid-phasecrystallization of F- and C-implanted SiGe films
Authors: Rodriguez, A Olivares, J Gonzalez, C Sangrador, J Rodriguez, T Ballesteros, C Gwilliam, RM
Citation: A. Rodriguez et al., Grain size, grain uniformity, and (111) texture enhancement by solid-phasecrystallization of F- and C-implanted SiGe films, J MATER RES, 15(7), 2000, pp. 1630-1634
Structural characterisation of ion beam synthesised Ru2Si3
Authors: Sharpe, JS Chen, YL Gwilliam, RM Kewell, AK Ledain, S McKinty, CN Lourenco, MA Butler, T Homewood, KP Kirkby, KJR Shao, G
Citation: Js. Sharpe et al., Structural characterisation of ion beam synthesised Ru2Si3, NUCL INST B, 161, 2000, pp. 937-940
Electrical and optical properties of Co+ ion implanted a-Si1-xCx : H alloys
Authors: Emerson, NG Gwilliam, RM Shannon, JM Jeynes, C Sealy, BJ Tsvetkova, T Tzenov, N Tzolov, M Dimova-Malinovska, D
Citation: Ng. Emerson et al., Electrical and optical properties of Co+ ion implanted a-Si1-xCx : H alloys, NUCL INST B, 160(4), 2000, pp. 505-509
On the crystallographic characteristics of ion-beam-synthesized Ru2Si3 precipitates
Authors: Shao, G Ledain, S Chen, YL Sharpe, JS Gwilliam, RM Homewood, KP Kirkby, KR Goringe, MJ
Citation: G. Shao et al., On the crystallographic characteristics of ion-beam-synthesized Ru2Si3 precipitates, APPL PHYS L, 76(18), 2000, pp. 2529-2531
Electrical characterization of a-SiOx : H produced by plasma immersion ionimplantation
Authors: Chen, SM Shannon, JM Gwilliam, RM Sealy, BJ
Citation: Sm. Chen et al., Electrical characterization of a-SiOx : H produced by plasma immersion ionimplantation, SOL ST ELEC, 43(3), 1999, pp. 599-607
Diagnostic measurement of ion implantation dose and uniformity with a laboratory-based positron probe
Authors: Coleman, PG Knights, AP Gwilliam, RM
Citation: Pg. Coleman et al., Diagnostic measurement of ion implantation dose and uniformity with a laboratory-based positron probe, J APPL PHYS, 86(11), 1999, pp. 5988-5992
Ion beam synthesized Ru2Si3
Authors: Sharpe, JS Chen, YL Gwilliam, RM Kewell, AK McKinty, CN Lourenco, MA Shao, G Homewood, KP Kirkby, KR
Citation: Js. Sharpe et al., Ion beam synthesized Ru2Si3, APPL PHYS L, 75(9), 1999, pp. 1282-1283
Low resistivity layers and Schottky contacts in amorphous silicon by Co+ implantation
Authors: Gwilliam, RM Hutchinson, S Shannon, JM Emerson, NG Sealy, BJ
Citation: Rm. Gwilliam et al., Low resistivity layers and Schottky contacts in amorphous silicon by Co+ implantation, ELECTR LETT, 34(25), 1998, pp. 2441-2442
Risultati: 1-22 |