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Results: 1-25/48
Authors:
KRESSMANN S
MOREL F
HARLE V
KASZTELAN S
Citation: S. Kressmann et al., RECENT DEVELOPMENTS IN FIXED-BED CATALYTIC RESIDUE UPGRADING, Catalysis today, 43(3-4), 1998, pp. 203-215
Authors:
HANGLEITER A
FRANKOWSKY G
HARLE V
SCHOLZ F
Citation: A. Hangleiter et al., OPTICAL GAIN IN THE NITRIDES - ARE THERE DIFFERENCES TO OTHER III-V SEMICONDUCTORS, Materials science & engineering. B, Solid-state materials for advanced technology, 43(1-3), 1997, pp. 201-206
Authors:
GFRORER O
SCHLUSENER T
HARLE V
SCHOLZ F
HANGLEITER A
Citation: O. Gfrorer et al., RELAXATION OF THERMAL STRAIN IN GAN EPITAXIAL LAYERS GROWN ON SAPPHIRE, Materials science & engineering. B, Solid-state materials for advanced technology, 43(1-3), 1997, pp. 250-252
Authors:
DUBOZ JY
BINET F
ROSENCHER E
SCHOLZ F
HARLE V
Citation: Jy. Duboz et al., ELECTRIC-FIELD EFFECTS ON EXCITONS IN GALLIUM NITRIDE, Materials science & engineering. B, Solid-state materials for advanced technology, 43(1-3), 1997, pp. 269-273
Authors:
LAKNER H
BROCKT G
MENDORF C
RADEFELD A
SCHOLZ F
HARLE V
OFF J
SOHMER A
Citation: H. Lakner et al., CHARACTERIZATION OF MOVPE-GROWN (AL,IN,GA)N HETEROSTRUCTURES BY QUANTITATIVE ANALYTICAL ELECTRON-MICROSCOPY, Journal of electronic materials, 26(10), 1997, pp. 1103-1108
Authors:
RUBIO J
VANDERMEULEN HP
CALLEJA JM
HARLE V
BERGMANN R
SCHOLZ F
Citation: J. Rubio et al., INFLUENCE OF SCREENING IN THE MAGNETOOPTICAL PROPERTIES OF A 2-DIMENSIONAL ELECTRON-GAS - PHOTOLUMINISCENCE FROM IN0.53GA0.47AS INP QUANTUM-WELLS/, Physical review. B, Condensed matter, 55(24), 1997, pp. 16390-16394
Authors:
LINDE M
UFTRING SJ
WATKINS GD
HARLE V
SCHOLZ F
Citation: M. Linde et al., OPTICAL-DETECTION OF MAGNETIC-RESONANCE IN ELECTRON-IRRADIATED GAN, Physical review. B, Condensed matter, 55(16), 1997, pp. 10177-10180
Authors:
SCHOLZ F
HARLE V
BOLAY H
STEUBER F
KAUFMANN B
REYHER G
DORNEN A
GFRORER O
IM SJ
HANGLEITER A
Citation: F. Scholz et al., LOW-PRESSURE METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF GAN GAINN HETEROSTRUCTURES/, Solid-state electronics, 41(2), 1997, pp. 141-144
Authors:
SCHOLZ F
HARLE V
STEUBER F
BOLAY H
DORNEN A
KAUFMANN B
SYGANOW V
HANGLEITER A
Citation: F. Scholz et al., LOW-PRESSURE MOVPE OF GAN AND GAINN GAN HETEROSTRUCTURES/, Journal of crystal growth, 170(1-4), 1997, pp. 321-324
Authors:
IM JS
MORITZ A
STEUBER F
HARLE V
SCHOLZ F
HANGLEITER A
Citation: Js. Im et al., RADIATIVE CARRIER LIFETIME, MOMENTUM MATRIX ELEMENT, AND HOLE EFFECTIVE-MASS IN GAN, Applied physics letters, 70(5), 1997, pp. 631-633
Authors:
KOWALSKI B
OMLING P
MEYER BK
HOFMANN DM
HARLE V
SCHOLZ F
SOBKOWICZ P
Citation: B. Kowalski et al., OPTICALLY DETECTED SPIN-RESONANCE OF CONDUCTION-BAND ELECTRONS IN INGAAS INP QUANTUM-WELLS/, Semiconductor science and technology, 11(10), 1996, pp. 1416-1423
Authors:
BINET F
DUBOZ JY
ROSENCHER E
SCHOLZ F
HARLE V
Citation: F. Binet et al., ELECTRIC-FIELD EFFECTS ON EXCITONS IN GALLIUM NITRIDE, Physical review. B, Condensed matter, 54(11), 1996, pp. 8116-8121
Authors:
WETZEL C
WINKLER R
DRECHSLER M
MEYER BK
ROSSLER U
SCRIBA J
KOTTHAUS JP
HARLE V
SCHOLZ F
Citation: C. Wetzel et al., ELECTRON EFFECTIVE-MASS AND NONPARABOLICITY IN GA0.47IN0.53AS INP QUANTUM-WELLS/, Physical review. B, Condensed matter, 53(3), 1996, pp. 1038-1041
Authors:
VANDERMEULEN HP
RUBIO J
CALLEJA JM
SCHWEIZER H
SCHOLZ F
HARLE V
BERGMANN R
Citation: Hp. Vandermeulen et al., MAGNETIC-FIELD DEPENDENCE OF MANY-BODY PROCESSES IN QUANTUM-WELL LUMINESCENCE, Surface science, 362(1-3), 1996, pp. 372-375
Authors:
BINET F
DUBOZ JY
ROSENCHER E
SCHOLZ F
HARLE V
Citation: F. Binet et al., MECHANISMS OF RECOMBINATION IN GAN PHOTODETECTORS, Applied physics letters, 69(9), 1996, pp. 1202-1204
Authors:
WANG JA
GRIESINGER UA
ADLER F
SCHWEIZER H
HARLE V
SCHOLZ F
Citation: Ja. Wang et al., SIZE EFFECT UPON EMISSION DYNAMICS OF 1.5 MU-M QUASI-QUANTUM WIRE DISTRIBUTED-FEEDBACK SEMICONDUCTOR-LASERS, Applied physics letters, 69(3), 1996, pp. 287-289
Authors:
KNORR C
WILHELM U
HARLE V
OTTENWALDER D
SCHOLZ F
HANGLEITER A
Citation: C. Knorr et al., A MECHANISM FOR LOW-POWER ALL-OPTICAL SWITCHING IN MULTIPLE-QUANTUM-WELL STRUCTURES, Applied physics letters, 69(27), 1996, pp. 4212-4214
Authors:
HAASE D
SCHMID M
KURNER W
DORNEN A
HARLE V
SCHOLZ F
BURKARD M
SCHWEIZER H
Citation: D. Haase et al., DEEP-LEVEL DEFECTS AND N-TYPE-CARRIER CONCENTRATION IN NITROGEN-IMPLANTED GAN, Applied physics letters, 69(17), 1996, pp. 2525-2527
Authors:
HOFMANN R
GAUGGEL HP
GRIESINGER UA
GRABELDINGER H
ADLER F
ERNST P
BOLAY H
HARLE V
SCHOLZ F
SCHWEIZER H
PILKUHN MH
Citation: R. Hofmann et al., REALIZATION OF OPTICALLY PUMPED 2ND-ORDER GAINN-DISTRIBUTED-FEEDBACK LASERS, Applied physics letters, 69(14), 1996, pp. 2068-2070
Authors:
LEHR G
HARLE V
SCHOLZ F
SCHWEIZER H
Citation: G. Lehr et al., LOCALIZATION-INDUCED BLUESHIFT IN QUANTUM WIRES - DIRECT EVIDENCE FROM MAGNETOPHOTOLUMINESCENCE MEASUREMENTS, Applied physics letters, 68(4), 1996, pp. 444-446
Authors:
FRANKOWSKY G
STEUBER F
HARLE V
SCHOLZ F
HANGLEITER A
Citation: G. Frankowsky et al., OPTICAL GAIN IN GAINN GAN HETEROSTRUCTURES, Applied physics letters, 68(26), 1996, pp. 3746-3748
Authors:
KAUFMANN B
DORNEN A
HARLE V
BOLAY H
SCHOLZ F
PENSL G
Citation: B. Kaufmann et al., NEW NEAR-INFRARED DEFECT LUMINESCENCE IN GAN DOPED WITH VANADIUM BY ION-IMPLANTATION, Applied physics letters, 68(2), 1996, pp. 203-204
Authors:
LEHR G
HARLE V
SCHOLZ F
SCHWEIZER H
Citation: G. Lehr et al., WAVE-GUIDING IN (QUANTUM) WIRE STRUCTURES - IMPACT ON THE POLARIZATION CHARACTERISTICS AND THE SLOPE OF THE OPTICAL GAIN, Applied physics letters, 68(17), 1996, pp. 2326-2328
Authors:
BERGMANN R
SCHWEIZER H
HARLE V
SCHOLZ F
Citation: R. Bergmann et al., MAGNETOTRANSPORT IN PERIODICALLY MODULATED QUANTUM WIRES, Applied physics letters, 68(16), 1996, pp. 2267-2269
Authors:
GRIESINGER UA
SCHWEIZER H
HARLE V
HOMMEL J
BARTH F
HOHING B
KLEPSER B
SCHOLZ F
Citation: Ua. Griesinger et al., DRY-ETCHED WIRE DISTRIBUTED-FEEDBACK LASER, IEEE photonics technology letters, 7(9), 1995, pp. 953-955