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Results: 1-24 |
Results: 24
PERMITTIVITY OF GAAS EPILAYERS CONTAINING ARSENIC PRECIPITATES
Authors: VASUDEVAN A CARIN S MELLOCH MR HARMON ES
Citation: A. Vasudevan et al., PERMITTIVITY OF GAAS EPILAYERS CONTAINING ARSENIC PRECIPITATES, Applied physics letters, 73(5), 1998, pp. 671-673
SUPERPARAMAGNETIC BEHAVIOR OF FE3GAAS PRECIPITATES IN GAAS
Authors: PEKAREK TM CROOKER BC NOLTE DD DEAK J MCELFRESH M CHANG JCP HARMON ES MELLOCH MR WOODALL JM
Citation: Tm. Pekarek et al., SUPERPARAMAGNETIC BEHAVIOR OF FE3GAAS PRECIPITATES IN GAAS, Journal of magnetism and magnetic materials, 169(3), 1997, pp. 261-270
MAGNETIC AND MAGNETORESISTANCE MEASUREMENTS ON IRON-BASED NANOCLUSTERS IN IN0.53GA0.47AS
Authors: PEKAREK TM CROOKER BC LI S MCELFRESH M CHANG JCP MCINTURFF D HARMON ES MELLOCH MR WOODALL JM
Citation: Tm. Pekarek et al., MAGNETIC AND MAGNETORESISTANCE MEASUREMENTS ON IRON-BASED NANOCLUSTERS IN IN0.53GA0.47AS, Journal of applied physics, 81(8), 1997, pp. 4869-4871
LOW-TEMPERATURE-GROWN GAAS TUNNEL-JUNCTIONS
Authors: AHMED S MELLOCH MR MCINTURFF DT WOODALL JM HARMON ES
Citation: S. Ahmed et al., LOW-TEMPERATURE-GROWN GAAS TUNNEL-JUNCTIONS, Electronics Letters, 33(18), 1997, pp. 1585-1587
HIGH-VOLTAGE GAINP GABS DUAL-MATERIAL SCHOTTKY RECTIFIERS/
Authors: SCHOEN KJ HARMON ES WOODALL JM CHIN TP
Citation: Kj. Schoen et al., HIGH-VOLTAGE GAINP GABS DUAL-MATERIAL SCHOTTKY RECTIFIERS/, Applied physics letters, 71(4), 1997, pp. 518-520
USE OF NONSTOICHIOMETRY TO FORM GAAS TUNNEL-JUNCTIONS
Authors: AHMED S MELLOCH MR HARMON ES MCINTURFF DT WOODALL JM
Citation: S. Ahmed et al., USE OF NONSTOICHIOMETRY TO FORM GAAS TUNNEL-JUNCTIONS, Applied physics letters, 71(25), 1997, pp. 3667-3669
TECHNIQUE FOR MEASUREMENT OF THE MINORITY-CARRIER MOBILITY WITH A BIPOLAR JUNCTION TRANSISTOR
Authors: DSOUZA SL MELLOCH MR LUNDSTROM MS HARMON ES
Citation: Sl. Dsouza et al., TECHNIQUE FOR MEASUREMENT OF THE MINORITY-CARRIER MOBILITY WITH A BIPOLAR JUNCTION TRANSISTOR, Applied physics letters, 70(4), 1997, pp. 475-477
CARRIER DYNAMICS OF LOW-TEMPERATURE-GROWN GAAS OBSERVED VIA THZ SPECTROSCOPY
Authors: PRABHU SS RALPH SE MELLOCH MR HARMON ES
Citation: Ss. Prabhu et al., CARRIER DYNAMICS OF LOW-TEMPERATURE-GROWN GAAS OBSERVED VIA THZ SPECTROSCOPY, Applied physics letters, 70(18), 1997, pp. 2419-2421
MOLECULAR-BEAM EPITAXY OF HIGH-QUALITY, NONSTOICHIOMETRIC MULTIPLE-QUANTUM WELLS
Authors: MELLOCH MR LAHIRI I NOLTE DD CHANG JCP HARMON ES WOODALL JM LI NY TU CW
Citation: Mr. Melloch et al., MOLECULAR-BEAM EPITAXY OF HIGH-QUALITY, NONSTOICHIOMETRIC MULTIPLE-QUANTUM WELLS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(3), 1996, pp. 2271-2274
MOLECULAR-BEAM EPITAXY OF NONSTOICHIOMETRIC SEMICONDUCTORS AND MULTIPHASE MATERIAL SYSTEMS
Authors: MELLOCH MR NOLTE DD WOODALL JM CHANG JCP JANES DB HARMON ES
Citation: Mr. Melloch et al., MOLECULAR-BEAM EPITAXY OF NONSTOICHIOMETRIC SEMICONDUCTORS AND MULTIPHASE MATERIAL SYSTEMS, Critical reviews in solid state and materials sciences, 21(3), 1996, pp. 189-263
THE COMPENSATION AND DEPLETION BEHAVIOR OF IRON-DOPED GAAS GROWN BY MOLECULAR-BEAM EPITAXY
Authors: MCINTURFF DT HARMON ES CHANG JCP PEKAREK TM WOODALL JM
Citation: Dt. Mcinturff et al., THE COMPENSATION AND DEPLETION BEHAVIOR OF IRON-DOPED GAAS GROWN BY MOLECULAR-BEAM EPITAXY, Applied physics letters, 69(13), 1996, pp. 1885-1887
THE ROLE OF POINT-DEFECTS AND ARSENIC PRECIPITATES IN CARRIER TRAPPING AND RECOMBINATION IN LOW-TEMPERATURE-GROWN GAAS
Authors: LOCHTEFELD AJ MELLOCH MR CHANG JCP HARMON ES
Citation: Aj. Lochtefeld et al., THE ROLE OF POINT-DEFECTS AND ARSENIC PRECIPITATES IN CARRIER TRAPPING AND RECOMBINATION IN LOW-TEMPERATURE-GROWN GAAS, Applied physics letters, 69(10), 1996, pp. 1465-1467
NOVEL GAAS PHOTODETECTOR WITH GAIN FOR LONG-WAVELENGTH DETECTION
Authors: HARMON ES MCINTURFF DT MELLOCH MR WOODALL JM
Citation: Es. Harmon et al., NOVEL GAAS PHOTODETECTOR WITH GAIN FOR LONG-WAVELENGTH DETECTION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(2), 1995, pp. 768-770
LOW-TEMPERATURE-GROWN III-V MATERIALS
Authors: MELLOCH MR WOODALL JM HARMON ES OTSUKA N POLLAK FH NOLTE DD FEENSTRA RM LUTZ MA
Citation: Mr. Melloch et al., LOW-TEMPERATURE-GROWN III-V MATERIALS, Annual review of materials science, 25, 1995, pp. 547-600
ELECTRICAL AND STRUCTURAL-PROPERTIES OF BE-DOPED AND SI-DOPED LOW-TEMPERATURE-GROWN GAAS
Authors: ATIQUE N HARMON ES CHANG JCP WOODALL JM MELLOCH MR OTSUKA N
Citation: N. Atique et al., ELECTRICAL AND STRUCTURAL-PROPERTIES OF BE-DOPED AND SI-DOPED LOW-TEMPERATURE-GROWN GAAS, Journal of applied physics, 77(4), 1995, pp. 1471-1476
ULTRAFAST-LIFETIME QUANTUM-WELLS WITH SHARP EXCITON SPECTRA
Authors: LAHIRI I NOLTE DD HARMON ES MELLOCH MR WOODALL JM
Citation: I. Lahiri et al., ULTRAFAST-LIFETIME QUANTUM-WELLS WITH SHARP EXCITON SPECTRA, Applied physics letters, 66(19), 1995, pp. 2519-2521
STEADY-STATE 4-WAVE-MIXING IN PHOTOREFRACTIVE QUANTUM-WELLS WITH FEMTOSECOND PULSES
Authors: BRUBAKER RM WANG QN NOLTE DD HARMON ES MELLOCH MR
Citation: Rm. Brubaker et al., STEADY-STATE 4-WAVE-MIXING IN PHOTOREFRACTIVE QUANTUM-WELLS WITH FEMTOSECOND PULSES, Journal of the Optical Society of America. B, Optical physics, 11(6), 1994, pp. 1038-1044
PRECIPITATION IN FE-IMPLANTED OR NI-IMPLANTED AND ANNEALED GAAS
Authors: CHANG JCP OTSUKA N HARMON ES MELLOCH MR WOODALL JM
Citation: Jcp. Chang et al., PRECIPITATION IN FE-IMPLANTED OR NI-IMPLANTED AND ANNEALED GAAS, Applied physics letters, 65(22), 1994, pp. 2801-2803
EFFECTIVE BAND-GAP SHRINKAGE IN GAAS
Authors: HARMON ES MELLOCH MR LUNDSTROM MS
Citation: Es. Harmon et al., EFFECTIVE BAND-GAP SHRINKAGE IN GAAS, Applied physics letters, 64(4), 1994, pp. 502-504
THERMAL VELOCITY LIMITS TO DIFFUSIVE ELECTRON-TRANSPORT IN THIN-BASE NP(-TRANSISTORS()N GAAS BIPOLAR)
Authors: HARMON ES MELLOCH MR LUNDSTROM MS CARDONE F
Citation: Es. Harmon et al., THERMAL VELOCITY LIMITS TO DIFFUSIVE ELECTRON-TRANSPORT IN THIN-BASE NP(-TRANSISTORS()N GAAS BIPOLAR), Applied physics letters, 64(2), 1994, pp. 205-207
PHYSICS AND APPLICATIONS OF METALLIC ARSENIC CLUSTERS IN GAAS BASED LAYER STRUCTURES
Authors: MELLOCH MR OTSUKA N HARMON ES NOLTE DD WOODALL JM MCINTURFF DT
Citation: Mr. Melloch et al., PHYSICS AND APPLICATIONS OF METALLIC ARSENIC CLUSTERS IN GAAS BASED LAYER STRUCTURES, JPN J A P 1, 32, 1993, pp. 771-774
MINORITY-CARRIER MOBILITY ENHANCEMENT IN P-MATCHED TO INP( INGAAS LATTICE)
Authors: HARMON ES LOVEJOY ML MELLOCH MR LUNDSTROM MS RITTER D HAMM RA
Citation: Es. Harmon et al., MINORITY-CARRIER MOBILITY ENHANCEMENT IN P-MATCHED TO INP( INGAAS LATTICE), Applied physics letters, 63(5), 1993, pp. 636-638
EXPERIMENTAL-OBSERVATION OF A MINORITY ELECTRON-MOBILITY ENHANCEMENT IN DEGENERATELY DOPED P-TYPE GAAS
Authors: HARMON ES LOVEJOY ML MELLOCH MR LUNDSTROM MS DELYON TJ WOODALL JM
Citation: Es. Harmon et al., EXPERIMENTAL-OBSERVATION OF A MINORITY ELECTRON-MOBILITY ENHANCEMENT IN DEGENERATELY DOPED P-TYPE GAAS, Applied physics letters, 63(4), 1993, pp. 536-538
CARRIER LIFETIME VERSUS ANNEAL IN LOW-TEMPERATURE GROWTH GAAS
Authors: HARMON ES MELLOCH MR WOODALL JM NOLTE DD OTSUKA N CHANG CL
Citation: Es. Harmon et al., CARRIER LIFETIME VERSUS ANNEAL IN LOW-TEMPERATURE GROWTH GAAS, Applied physics letters, 63(16), 1993, pp. 2248-2250
Risultati: 1-24 |